• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.1-6
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• 1993

Electronic and magnetic proper tis of the rare-earth transition metal compound, $LaCo_{13}$, are investigated by performing self-consistent local density functional LMTO (linearized muffin-tin orbital) band structure calculations for both paramagnetic and ferromagnetic phases of $LaCo_{13}$. The calculated magnetic moments for the two types of Co atoms, Co I and Co II, are 1.34 and $1.65{\mu}_{B}$, respectively. The average magnetic moment of Co atoms in the ferromagnetic phase of $LaCo_{13}$ is estimated to be $1.60{\mu}_{B}$, which is in fairly good agreement with the experimental values, $1.56~1.68{\mu}_{B}$.

• The Journal of the Korea institute of electronic communication sciences
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• v.2 no.4
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• pp.215-221
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• 2007

IPv6 is a protocol to solve the address space limitation of IPv4 by IETF. Many transition mechanism to communicate between IPv4 and IPv6 in mixed IPv4/IPv6 network are proposed. DSTM tunneling is a mechanism that dual stack in IPv6 network is able to communicate with node in IPv4 network by dynamic allocating the IPv4 address. This mechanism supports the execution of IPv4 dependent application without modification at IPv6 network. In this paper, we explain the security vulnerability at DSTM network for DHCP attack, TEP attack, and source spoofing attack then describe the result of attacks.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.4
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• pp.575-584
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• 2017

It is suggested the circuit network to analyze the time response of control system. And it is analyzed the interrelation for classical control and modern control by the transfer function and the state equation. Without complicated integration of state transition equation, it is suggested to possible time response by combining the state transition matrix and the transfer function. A source program is coded to display the time response according to the unit-step and the sinusoidal input. Transient response is analyzed in the unit-step input and phase difference between current and voltage is analyzed in sinusoidal input. As writing the suggested contents in transient response or state-space analysis, it is improved the understanding for control engineering and ability for system design.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.32-37
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• 2002

This paper gives the basic mechanical properties of indium-tin-oxide (ITO) films on polymer substrates which are exposed to externally and thermally induced bending force. By using modified Storney formula including triple layer structure and bulge test measuring the conductive changes of patterned ITO islands as a function of bending curvature, the mechanical stability of ITO films on polymer substrates was intensively investigated. The numerical analyses and experimental results show thermally and externally induced mechanical stresses in the films are responsible for the difference of thermal expansion between the ITO film and the substrate, and leer substrate material and its thickness, respectively. Therefore, a gradually ramped heating process and an organic buffer layer were employed to improve the mechanical stability, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations. As a result, it is uncovered that a buffer layer is also a critical factor determining the magnitude of mechanical stress and the layer with the Young's modulus lower than a specific value can contribute to relieving the mechanical stress of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.539-545
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• 2001

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.3
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• pp.174-180
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• 2006

Steam generator (SG) tubes are expanded inside tubesheet holes by using explosive or hydraulic methods to be fixed in a tubesheet. In the tube expansion process, it is important to minimize the crevice gap between expanded tube and tube sheet. In this paper, absolute and differential signals are computed by a numerical method for several different locations of tube expansion inside and outside a tubesheet and signal variations due to tubesheet, tube expansion and operating frequencies are observed. Results show that low frequency is good for detecting tubesheet location in both types of signals and high frequency is suitable for sizing of tube diameter as well as the detection of transition region. Also learned is that the absolute signal is good for measuring tube diameter, while the differential signal is good for locating the top of tubesheet and both ends of the transition region. In the case of mingled anomaly with tube expansion and tubesheet, low frequency inspection is found to be useful to analyze the mixed signal.

• Journal of Institute of Control, Robotics and Systems
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• v.3 no.1
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• pp.101-108
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• 1997

The initial token value required to the optimal performance of discrete event systems can be decided by Sum of Delay Time and Synchronic Time ratio, which are new synchronic variables in Timed Place Petri Nets. For the system consisting of two Live-and-Bounded circuits(LB-circuits) fused in common Transition-Transition-Path or common Place-Place-Path, we prove that the Synchronic Time Ratio is the initial token ratio between two LB-circuits to optimally perform system functions. These results are generalized and formulated as a theorem. The initial tokens of a specific place can imply shared resources. Using the theorem, we can decide the minimum number of the shared resources to obtain the optimal performance, and minimize the idling time of resources. As an example, an automated assembly system is modeled by Timed Place Petri Net, and the initial tokens to achieve the optimal system performance are identified. All the values are verified by simulation.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.364-369
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• 2017

Double molybdate $NaGd_{1-x}(MoO_4)_2:Ho^{3+}/Yb^{3+}$ phosphors with proper doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0$ and 0.05, and $Yb^{3+}=0$, 0.35, 0.40, 0.45, and 0.50) were successfully synthesized using the microwave sol-gel method. Well-crystallized particles formed after heat-treatment at $800^{\circ}C$ for 16 h showed fine and homogeneous morphologies with particle sizes of $1{\sim}3{\mu}m$. The spectroscopic properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the upconversion doped samples exhibited strong yellow emissions, from the combination of strong emission bands at 545 nm and 655 nm in the green and red spectral regions, respectively. The strong 545 nm emission band in the green region corresponded to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions, while the strong 655 nm band in the red region appeared because of the $^5F_5{\rightarrow}^5I_8$ transition in the $Ho^{3+}$ ions. The pump power dependence and the Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.