• 한국재료학회지
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• 제29권8호
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• pp.477-482
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• 2019

The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Structural Engineering and Mechanics
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• 제62권6호
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• pp.781-788
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• 2017

In this paper, a stress wave model is established to describe the three states (separate, contact and impact) of clearance joints. Based on this stress wave model, the propagation characteristics of stress wave generated in clearance joints is revealed. First, the stress wave model of clearance joints is established based on the viscoelastic theory. Then, the reflection and transmission characteristics of stress wave with different boundaries are studied, and the propagation of stress wave in viscoelastic rods is described by the characteristics method. Finally, the stress wave propagation in clearance joints with three states is analyzed to validate the proposed model and method. The results show the clearance sizes, initial axial speeds and material parameters have important influences on the stress wave propagation, and the new stress waves will generate when the clearance joint in contact and impact states, and there exist some high stress region near contact area of clearance joints when the incident waves are superposed with reflection waves, which may speed up the damage of joints.

• Bulletin of the Korean Chemical Society
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• 제22권8호
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• pp.837-841
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• 2001

The electronic absorption and Raman spectra of $\alpha\omega-diphenylpolyenyl$, anions Ph(CH)nPh- (DPn- , n = 3, 5, 7, 9, and 13), with odd number of carbons at the polyene part, have been studied in the tetrahydrofuran (THF) solutions and in their solid film states, respectively. In the case of Raman spectra for DPn- , the frequencies and relative intensities of some Raman peaks regularly change with the increase of polyene chain length. The spectral patterns of anions (DPn- ) are very similar with those of radical anion (DPn${\cdot}$- ). However, the C=C stretching peaks of DPn- anions are observed in the 25-35 cm-1 higher frequency region than those of DPn${\cdot}$- radical anions. In the case of long chain models such as DP9- and DP13- , the C=C stretching peaks are observed in even higher frequency region than those of the corresponding neutral polyenes such as DP8, DP10, and DP12. The Raman patterns of DPn- anions in the THF solutions are similar with those in their solid film states. On the other hand, their electronic absorption spectra show a considerable difference each other. The n- ${\pi}*$ electronic absorption bands of DPn- anions in the THF solutions have been observed in the 0.27-0.39 eV lower energy region than those in their solid film states due to the solvent effects on polyene anions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.702-705
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• 2003

We reported the result of driving PDP's in selective erase scheme and three wall charge states. Compared to the selective write driving scheme, the selective erase scheme achieved flicker free half-ON state with much simpler driving waveforms than the selective write scheme. We believed that this improvement was possible since the cells entering the address period with enough wall charges to modulate easily with.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.156-159
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• 1994

The electrical property of polyvinylalcohol (PVA) films (several hundreds ∼ several $\mu\textrm{m}$ in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films (>several thousands ) has been very high and enhanced by the exposure either to high humidity fo air or NH$_3$. which can be explained in terms of the role of ionic transport. The use of PVA film as NH$_3$ sensor is also proposed. In PVA films less than 1500 , two conducting states: high conducting and low conducting states, are observed.

• 대한전자공학회논문지
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• 제25권2호
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• pp.188-195
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• 1988

The electronic states in implanted n-type silicon inversion layers have been calculated by solving Schrodinger and Poisson's equations self-consistently. The results show that implantation affects seriously energy levels, populations, and electron distribution of n-type silicon inversion layers. The calcualted channel charge is in excellent agreement with the experimental data reported elsewhere. This analysis is expected to provide powerful means to evaluate the performance of implanted n-channel MOSTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.