• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.149.1-149.1
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• 2013

Noble metal silicides are widely used in silicon based microelectronic and optoelectronic devices. Among them, as compared to other silicides, structural and electronic properties of platinum silicide (PtSi) are found to be less sensitive to change in its dimensions. PtSi is known to overcome the junction spiking problems of Al-Si contacts. Present study is regarding the spatial evolution of platinum silicide in Pt/SiOx/Si. Scanning photoelectron emission microscopy (SPEM) was used for this purpose. SPEM images were obtained for pristine samples and after an annealing at $500^{\circ}C$ for 1 hr. Core-level spectra were recorded at different points in SPEM images contrasted by the intensity of Pt 4f7/2. Both Pt 4f and Si 2p spectra reveal the formation of PtSi after annealing. However, in contrast to earlier reports, PtSi formation is found to be non-uniform confirmed by the SPEM images and from the core level spectra taken at different intensity points.

• 전자공학회논문지SC
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• 제48권2호
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• pp.80-85
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• 2011

알츠하이머병(AD: Alzheimer's disease)과 파킨슨병(PD: Parkinson's disease)은 가장 흔한 퇴행성 뇌신경질환이다. 본 연구에서는 라만 스펙트럼을 이용하여 AD와 PD를 분류하기 위해 특징 추출하는 방법을 제안하였다. 혈소판으로부터 측정한 라만 스펙트럼에 먼저 smoothing을 적용한 다음 기준선의 왜곡을 제거하고 스펙트럼의 기준 피크를 중심으로 그 위치를 정렬하는 순서로 이루어진 전처리 과정을 적용하였다. 전처리 과정을 수행한 스펙트럼에서 AD와 PD를 구별할 수 있는 특징을 조사하였고 그 결과 743과 $757cm^{-1}$ 영역의 피크 비와 1248과 $1448cm^{-1}$ 영역의 피크 크기가 가장 변별력 있는 특징임을 확인하였다. 실험 결과에 따르면, 총 216개의 라만 스펙트럼에 대한 MAP(maximum a posteriori probability) 분류 실험에서 이 세 개의 특징만으로도 약 95.8%의 분류율을 보였다.

• 한국산학기술학회논문지
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• 제12권11호
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• pp.5150-5155
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• 2011

인지증을 유발하는 원인은 알츠하이머병(Alzheimer's Disease: AD)과 혈관성 인지증(vascular Dementia: VD)이 가장 높은 비율을 차지한다. 본 논문에서는 측정된 라만 스펙트럼에서 AD, VD, 정상(NOR: normal)을 분류하기 위해 변별력 있는 영역을 조사하고, 특징 변환을 이용한 분류 실험 결과를 제시하였다. 혈소판으로부터 측정한 라만 스펙트럼은 먼저 smoothing을 적용한 다음 배경 잡음을 제거하고 스펙트럼의 기준 피크를 중심으로 그 위치를 정렬하였고 minmax 방법을 사용하여 정규화 하였다. 전처리를 거친 스펙트럼은 AD와 VD, NOR를 변별하기 가장 용이한 영역을 결정하기 위해 조사되었으며, 그 결과 725-777, 1504-1592, 1632-1700 $cm^{-1}$ 영역에서 스펙트럼이 많은 차이를 보임을 확인하였다. 분류 실험은 선택한 각 영역에 대하여 PCA(principal component analysis)와 NMF(nonnegative matrix factorization) 방법을 적용하여 얻은 특징을 이용하여 행하였다. 총 327개의 라만 스펙트럼에 대한 MAP(maximum a posteriori probability) 분류 실험 결과에 따르면, 본 연구에서 제안된 국부 영역 변환 특징을 사용했을 때 평균 92.8 %의 분류율을 보임을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.141-141
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• 2012

The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films using gas environment were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). REELS spectra revealed that the band gaps of IZTO thin films are 3.26, 3.07, and 3.46 eV for water mixed with oxygen, argon mixed with oxygen, and air environments, respectively. The measured band gaps by REELS are consistent with the optical band gaps obtained by UV-Spectrometer. The optical properties represented by the dielectric function $\mathfrak{m}$, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the IZTO thin films with different gas environments were determined from a quantitative analysis of REELS spectra. The calculated transmission from quantitative analysis of REELS spectra shows good agreement with transmission measured by UV-spectrometer. The transmission values of 89% and low electrical resistivity of $3.55{\times}10^{-3}{\Omega}{\cdot}cm$ have been achieved for argon mixed with oxygen which indicates that the gas enviroment plays an important role in improving the electronic and optical properties of films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.423-426
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• 1995

Langmuir-Blodgett technique offers a convenient and elegant way to organic conducting systems for ultra thin films. In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules in a large number of organic conducting systems.[1] A very interesting UV-visible spectra of octadecylviologen-$(TCNQ^-)_2$ was obtained from a methylenechloride and acetonitrile mixture, and from Langmuir-Blodgett films. The ESR characteristics of octadecylviologen-$(TCNQ^-)_2$ were studied to understand conducting mechanism and structure of LB films. The ESR spectra infer that the N-dococylquinolinium-TCNQ LB films has anisotropic property. But octadecylviologen-$(TCNQ^-)_2$ does not show angular dependence. As the temperature increases from 350K to 450K, the ESR signal of LB films becomes sharp. Scanning calorimetry(DSC) of octadecylviologen-$(TCNQ^-)_2$ provides the endothermic reaction temperature of the films, 340K, which corresponds to the temperature, 365K, of the new ESR signal.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.458-463
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• 1995

The optical and electrical properties of $C_{22}$-Quinolinium(TCNQ) Langmuir-Blodgett films have been studied depending on the annealing temperatures. The optimal properties were investigated using UV/visible(300-800[nm]) absorption spectra and FTIR(Fourier-transformed- infrared) absorption measurements. The electrical properties were investigated in a frequency range of 10[Hz]-13[MHz]. The UV/visible absorption spectra at room temperature show that there are four characteristic peaks at 320, 380, 494 and 678[nm]. These absorption peaks decrease very rapidly above the annealing temperature of 180[.deg. C], which is due to a structural change of TCNQ. The FTIR absorption measurements strongly support the result of the UV/visible absorption spectra, because the absorption peak of TCNQ- at 2181[$cm^{-1}$ /] also decreases above 140[.deg. C]. The frequency-dependent dielectric constant shows that there is a dielectric dispersion near 1[MHz] which is due to an orientational polarization of the molecules inside the film. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.57-60
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• 2002

In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.