• 제목/요약/키워드: Electronic packaging material

검색결과 169건 처리시간 0.022초

Characterization of Stiffness Coefficients of Silicon Versus Temperature using "Poisson's Rati" Measurements

  • Cho, Chun-Hyung;Cha, Ho-Young;Sung, Hyuk-Kee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제16권2호
    • /
    • pp.153-158
    • /
    • 2016
  • The elastic material constants, stiffness constants ($c_{11}$, $c_{12}$, and $c_{44}$), are three unique coefficients that establish the relation between stress and strain. Accurate knowledge of mechanical properties and the stiffness coefficients for silicon is required for design of Micro-Electro-Mechanical Systems (MEMS) devices for proper modeling of stress and strain in electronic packaging. In this work, the stiffness coefficients for silicon as a function of temperature from $-150^{\circ}C$ to $+25^{\circ}C$ have been extracted by using the experimental measurements of Poisson's ratio (${\nu}$) of silicon in several directions.

Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
    • /
    • 제15권4호
    • /
    • pp.221-225
    • /
    • 2014
  • Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

Improvement in Thermomechanical Reliability of Power Conversion Modules Using SiC Power Semiconductors: A Comparison of SiC and Si via FEM Simulation

  • Kim, Cheolgyu;Oh, Chulmin;Choi, Yunhwa;Jang, Kyung-Oun;Kim, Taek-Soo
    • 마이크로전자및패키징학회지
    • /
    • 제25권3호
    • /
    • pp.21-30
    • /
    • 2018
  • Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

SiC based Technology for High Power Electronics and Packaging Applications

  • Sharma, Ashutosh;Lee, Soon Jae;Jang, Young Joo;Jung, Jae Pil
    • 마이크로전자및패키징학회지
    • /
    • 제21권2호
    • /
    • pp.71-78
    • /
    • 2014
  • Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

The Packaging and Irradiation Effects on Volatile Compounds of Red Pepper Powder

  • Lee, Jeung-Hee;Kim, Mee-Ree
    • 한국식품저장유통학회:학술대회논문집
    • /
    • 한국식품저장유통학회 2003년도 제23차 추계총회 및 국제학술심포지움
    • /
    • pp.139.2-139
    • /
    • 2003
  • The packaging and irradiation effects on the volatile compounds of red pepper powder were investigated. The red pepper powder (Capsicum annuum) was prepackaged in vacuum (PE/Nylon film bag), and irradiated with the dose of 0, 3, 5 or 7 kGy at 0$^{\circ}C$. The odor of irradiated red pepper powder was classified into 4 groups (0, 3, 5, and 7 kGy) by electronic nose using metal oxide sensors, and the volatile compounds developed by irradiation were analyzed by GC-MS along with solid phase microextraction. Hexanoic acid and tetramethyl pyrazine, which were found in red pepper powder of 0 kGy, disappeared in irradiated red pepper powder. Further, 1,3-bis(1,1-dimethylethyl)-benzene was detected by GC-MS as a new developed volatile compound in irradiated red pepper, and this compound was identified to be originated from packaging material not from red pepper powder. This study showed that off-odor from packaging materials was responsible for the volatiles produced from dried food treated with irradiation.

  • PDF

전자패키지용 경사조성 $Al-SiC_p$복합재료의 열.기계적 변형특성 해석 (Thermomechanical Analysis of Functionally Gradient $Al-SiC_p$ Composite for Electronic Packaging)

  • 송대현;최낙봉;김애정;조경목;박익민
    • Composites Research
    • /
    • 제13권6호
    • /
    • pp.23-29
    • /
    • 2000
  • 층상구조재료가 갖는 약점으로는 구성재료층 간의 열.기계적 특성 차이로 인하여 내부응력이 발생되고 비틀림 변형이 유발되어 형상 제어가 매우 어려울 뿐만 아니라, 반복적인 열 하중으로 인해 열이력을 받을 경우 접합부에서의 파손이 생길 수 있다는 것이다. 최근 층상구조에서 조직 혹은 조성이 점차적으로 변하는 계면을 삽입한 경사조성재료는 열.기계적 변형특성 차이에 의한 재료의 손상을 최소화시킬 수 있으나, 용도에 적합한 구조설계를 위해서 열.기계적 해석이 필요하다. 본 연구에서는 전자패키징용 $Al-SiC_p$ 경사조성 복합재료의 기하학적 구조와 온도변화에 따른 곡면화 변형 및 내부응력분포를 해석하고자 하였다. 한편 층상구조 $Al-SiC_p$ 경사조성 복합재료의 열변형량을 측정하고 내부응력분포를 실험적으로 구하여, 이론적으로 계산한 결과와 비교하였다. 본 연구의 해석결과는 경사조성 층상구조재료의 최적구조 설계에 유용하게 적용할 수 있다.

  • PDF

Selection of Environmentally Conscious Manufacturing's Program Using Multi-Criteria Decision Making: A Case Study in Electronic Company

  • Sutapa, I. Nyoman;Panjaitan, Togar W.S.
    • Industrial Engineering and Management Systems
    • /
    • 제10권2호
    • /
    • pp.123-127
    • /
    • 2011
  • Nowadays, green purchasing, stop global warming, love the mother earth, and others that related to environment become hot issues. Manufactures industries tend to more active and responsive to those issues by adopting green strategies or program like Environmentally Conscious Manufacturing (ECM). In this article, an electronic company had applied 12 ECM Program and tries to choose one of those programs using 6 criteria, such as total cost involved, quality, recyclable material, process waste reduction, packaging waste reduction, and regulation compliance. By using multi-criteria decision making model, i.e. Analytical Hierarchy Process (AHP), Technique for Order Preference by Similarity to Ideal Solution (TOPSIS), and Modified TOPSIS methods, the ECM Program 9 (Open pit) is the best option.

전자부품의 접합재료로서의 Sn도금막 형성 조건 및 도금막의 특성에 관한 연구 (A study on plating conditions and characteristics of Sn layers as inserted metals for electronic component)

  • 신영의;임민빈;김경섭
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제6권6호
    • /
    • pp.505-513
    • /
    • 1993
  • 본 논문은 전자 부품의 Soldring기에 사용되는 접합제를 Flux를 포함한 Solder paste 대신에 도금막을 이용하기 위한 Sn 도금막 형성 프로세스를 검토한 것이다. 반도체 Device를 Packaging한 외부단자(lead frame)과 HIC상의 후막전극(Ag/Pd)과의 접합 및 PCB상의 Cu land와의 접합시에는 스크린 프린트에 의한 Solder Paste가 일반적으로 사용되고 있다. 본 논문은 Fluxless Soldering의 한수단으로 도금막을 lead상에 형성시켜 접합 재료로서의 형성 프로세스 및 도금막의 특성과 도금형성 Paramete와의 관련성을 실험적으로 검토한 것으로 전류밀도 200 A/m$^{2}$의 조건으로 형성한 Sn 도금막이 접합용으로 최적조건임을 밝혔다.

  • PDF

Demonstration of Alternative Fabrication Techniques for Robust MEMS Device

  • Chang, Sung-Pil;Park, Je-Young;Cha, Doo-Yeol;Lee, Heung-Shik
    • Transactions on Electrical and Electronic Materials
    • /
    • 제7권4호
    • /
    • pp.184-188
    • /
    • 2006
  • This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

LED 조명 방열 환경에서 진동형 히트파이프의 작동 특성 (Operational Characteristics of Pulsating Heat Pipes for the Application to the Heat Dissipation of LED Lighting)

  • 방광현;김형탁;박해균
    • 한국전기전자재료학회논문지
    • /
    • 제25권10호
    • /
    • pp.830-836
    • /
    • 2012
  • An efficient cooling system is essential for the electronic packaging such as a high-luminance LED lighting. A special heat transport technology, Pulsating Heat Pipe (PHP), can be applied to the cooling of LED lighting. In this paper, the operational characteristics of the PHP in the imposed thermal boundary conditions of LED lighting were experimentally investigated. The experimental PHP was made of copper tubes of internal diameter of 2.1 mm. The working fluids of ethanol, FC-72, water, acetone and R-123 were chosen for comparison. The results showed that an optimum range of charging ratio exists for high cooling performance; 50% for most of the fluids. Among the five working fluids, water showed the highest heat transfer rate of 260 W. Two distinguished characteristics of pulsating direction were identified. It is also identified that high vapor pressure gradient is one of key parameters for better heat transfer performance.