• Cartoon and Animation Studies
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• s.49
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• pp.589-610
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• 2017

This study aimed at examining the music world of the composer Muczynski, who played an important and meaningful role in the various experimental trends of music which began to appear in the early $20^{th}$ century, and his works, thereby understanding his relationship with the development of music of various genres today. In the study, his pieces of piano music among his works, which formed the basis for his music, were analyzed. The study examined stylistic characteristics, that is techniques of various types including form, melody, harmony, tonality, rhythm and structure, and introduced the composer's growth in terms of music and philosophical background. Muczynski, the composer who showed the characteristics of neoclassicism, neoromanticism and neobaroque in contrast to the various forms of the $20^{th}$ music, namely music of free styles including atonal music, twelve-tone technique, avant-garde music and electronic music, used traditional forms. However, the characteristics of his works are very free. In addition, in the 1960s, he participated in the production of documentary movie music, creating very creative and sensational music. Muczynski's music has the features of tonality and shows neoclassic and neoromantic features including economical idea, lyrical melody, bitonality and nine-note scale. His music, therefore, is being evaluated as very creative and valuable and is largely significant in that it has provided a good basis for the development of modern movie music and jazz music today.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.358-367
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• 2006

In this paper, a mathematical formulation of protection ratio and its calculation method are suggested for a radio relay system with diversity techniques. The analysis of protection ratio and its physical meaning have been performed for the space or frequency diversity system, and in particular protection ratios are reviewed in terms of the parameters of diversity improvement factor, which comprises antenna gain, separation distance between antennas, frequency and its difference between carriers, and distance. As one of simulated results, the co-channel protection ratio of 60 dB is obtained for the space diversity system regarding 6.2 GHz, 60 km, 64-QAM, and 25 m between antennas, which gives 15 dB less than the co-channel protection ratio of the non-space diversity system. In addition, the co-channel protection ratio for the frequency diversity system gives 64 dB in case of frequency offset of 0.5 GHz under the same conditions as the space diversity system, which brings about 11 dB less than the co-channel protection ratio of non-frequency diversity system. In consequency, it is interesting to note that the space diversity system is less sensitive to interference in comparison to the frequency diversity system and provides better quality of service for a given interference.

• Journal of the Korean Society of Safety
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• v.37 no.4
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• pp.120-128
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• 2022

Printed circuit boards (PCBs) are a basic component in the electronics industry and are widely used in nearly all electronic products, such as mobile phones, tablet computers, and digital cameras, as well as in electric equipment. PCB manufacturing involves the use of many chemicals and chemical processes and therefore has more risks than other manufacturing sectors. This study aims to identify the causes of possible accidents during PCB manufacturing through risk assessment, develop and implement safety measures, and evaluate the effectiveness of these measures. Note that the safety measures developed to mitigate the risks of a certain process were also implemented for other similar processes. The risk assessments conducted over seven years, from 2015 to 2021, at a PCB manufacturing company identified 361 hazardous processes. Between 2016 and 2019, 41-56 hazardous processes were identified per year; such processes decreased to fewer than 20 per year after 2020. Application of the risk assessment results to the improvement of the hazardous processes with the similar characteristics seems to be effective in decreasing the risks. Equipment-related factors such as lack of appropriate maintenance, low work standards, and defective protection devices were responsible for 59.8% of all possible accidents. Because PCB manufacturing involves many chemicals, skin contact with hazardous substances, electric shock, fire, and explosion were the most common types of possible accidents (81.7%). In total, 505 safety measures were implemented, including 157 related to purchase and improvement of equipment and devices for safety (31.1%), 147 related to the installation/modification of fire prevention facilities (29.1%), and 69 related to the use of standard electrical appliances (13.7%). Risk assessment conducted after implementing the safety measures showed that these measures significantly decreased risk; 247 processes (68.4%) had a risk level of 3, corresponding to "very low," and 114 processes (31.6%) showed a risk level of 4, corresponding to "low." In particular, risk assessment of 104 processes with risk scores of 12 and 10 other processes with risk score of 16 showed that the risk decreased to 4 after implementing the safety measures. Thus, implementing these measures in similar manufacturing sectors that involve chemical processes can mitigate risk.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.2 no.4
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• pp.71-102
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• 2007

There were many comprehensive analyses conducted within the existing research activities wherein factors affecting technology progress including investment in R&D vis-${\Box}$-vis their influences act as the determinants of TFP. Note, however, that there were few comprehensive analysis in the industrial research performed regarding the impact of the economy of scale as it affects TFP; most of these research studies dealt with the analysis of the non -parametric Malmquist productivity index or used the stochastic frontier production function models. No comprehensive analysis on the impacts of individual independent variables affecting TFP was performed. Therefore, this study obtained the TFP increase rate of each industry by analyzing the factors of the existing growth accounting equation and comprehensively analyzed the TFP determinants by constructing a comprehensive analysis model considering the investment in R&D and economy of scale (smallness by industry) as the influencers of TFP by industry. First, for the TFP increase rate of the 15 industries as a whole, the annual average increase rate for 1993${\sim}$ 1997 was approximately 3.8% only; during 1999${\sim}$ 2000 following the foreign exchange crisis, however, the annual increase rate rose to approximately 7.8%. By industry, the annual average increase rate of TFP between 1993 and 2000 stood at 11.6%, the highest in the electrical and electronic equipment manufacturing business and IT manufacturing sector. In contrast, a -0.4% increase rate was recorded in the furniture and other product manufacturing sectors. In the case of the service industry, the TFP increase rate was 7.3% in the transportation, warehousing, and communication sectors. This is much higher than the 2.9% posted in the electricity, water, and gas sectors and -3.7% recorded in the wholesale, food, and hotel businesses. The results of the comprehensive analysis conducted on the determinants of TFP showed that the correlations between R&D and TFP in general were positive (+) correlations whose significance has yet to be validated; in the model where the self-employed and unpaid family workers were used as proxy variables indicating the smallness of industry out of the total number of workers, however, significant negative (-) correlations were noted. On the other hand, the estimation factors of variables surrogating the smallness of scale in each industry showed that a consistently high "smallness of scale" in an industry means a decrease in the increase rate of TFP in the same industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.