• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.443-447
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• 2004

In this study, we investigated the necessity of encapsulation layer to maximize flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer han a significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that han a significant effect on internal thermal stress. To compare the magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

• Journal of the Korean Chemical Society
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• v.61 no.6
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• pp.311-319
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• 2017

By using Density Functional Theory (DFT), we have performed alkali metal and alkaline earth metal inside fullerene-like BeO cluster (FLBeOC) in terms of energetic, geometric, charge transfer, work function and electronic properties. It has been found that encapsulated processes of the alkali metal are exothermic and thermodynamically more favorable than alkaline earth metal encapsulation, so that interaction energy ($E_{int}$) of the alkali metal encapsulation FLBeOC is in the range of -0.02 to -1.15 eV at level of theory. It is found that, the electronic properties of the pristine fullerene-like BeO cluster are much more sensitive to the alkali metal encapsulation in comparison to alkaline earth metal encapsulation. The alkali and alkaline earth metal encapsulated fullerene-like BeO cluster systems exhibit good sensitivity, promising electronic properties which may be useful for a wide variety of next-generation nano-sensor device components. The encapsulation of alkali and alkali earth metal may increase the electron emission current from the FLBeOC surface by reducing of the work function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.473-476
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• 2003

This paper shows necessity of encapsulation layer to maximite flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer have an significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that have a significant effect on internal thermal stress. To compare magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.991-994
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• 2003

Electronic Paper용 무기소재로 $TiO_2$ 나노입자를 적용하기 위해서는 분산시 침전문제, 입자의 전기영동 속도향상을 위한 충분한 $\xi-potential$확보, 분산제 첨가시 안정적 결합을 위한 acidic site의 확보등의 문제가 해결되어야 한다. 이를 위해 저온균일침전법으로 $TiO_2$ 나노입자를 제조하였고, 폴리머 체인을 통하여 encapsulation하여 최적의 분산과 전기영동조건 확보를 위한 공정조건에 대해 연구하였다. 실험결과 다양한 분산매에 계면활성제를 1.0wt% 첨가시 유전율상수가 2.5인 분산매에서 가장 좋은 $\xi-potential$을 얻을 수 있었으며 이를 바탕으로 acidic site에 따른 폴리머 체인의 흡착실험 결과 pH $1{\sim}2$의 조건에서 제조된 $TiO_2$ 나노입자의 경우가 체인과의 흡착정도가 가장 좋아 분산특성을 향상시킬 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.282-283
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• 2009

In the research, we have proposed a novel encapsulation with simple process and steady film for external environment in comparison with conventional encapsulation method. This was designed to cover the emitting organic material from air. Silicon 야oxide was used for thin film of encapsulation and the deposition thickness of the organic film was 220 nm. Operating voltage of green OLED with encapsulation was 5.5 V and luminance was 7.370 cd/$m^2$ at the applied voltage of 14.5 V. Luminance was measured in 10 hour intervals at the air-exposed condition. After 110 hours and 300 hours, luminances of green OLED were 7,368 and 7,367 cd/$m^2$, respectively. Luminance of green JLED doesn't decrease until 300 hours. As a results, proposed encapsulation can increase the life time of green OLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.905-910
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• 2011

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.13-28
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• 2021

Since transient electronic devices can operate under harsh conditions such as electrolytic solutions or inside the body, and be removed by hydrolysis after operation, they can replace conventional electronic devices in various research areas like biomedical implantable devices. Moreover, transient electronic devices that can dissolve in water and enzymes are the focus of the new concept of green technology, which can solve electrical waste issues. However, the surroundings of transient electronic devices can deteriorate internal device components. Thus, an encapsulation strategy is introduced for stable operation in solution by shielding the outside of a device with a passive barrier. This article summarizes recent research trends in transient electronic devices, including their background, dissolution behavior, and encapsulation strategies to enhance reliability by blocking water permeation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.36-40
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• 1988

High TC Y-Ba-Cu-O Superconductors were fabricated by sintering, sinter+HIP encapsulation. Specimens were sintered at 920$^{\circ}C$∼960$^{\circ}C$. A part of sintered specimens were treated by HIP, and HIP conditions were 150 MPa, 880$^{\circ}C$, 30min under the Ar atmosphere. The relative density of HIP specimens was increased 5∼8% in comparison with sintered one(90∼93% relative density). X-ray analysis represented the orthorhobic-tetragonal phase transition with annealing condition. Tc measurements showed a sharp drp within 3$^{\circ}C$, 91K onset and 89K offset. Transport current density(Jc) of sintered specimens showed typically∼159A/㎤ but that of sinter+HIP encapsulation was decreased to∼89A/㎤ because of insufficient oxygen diffusion, Hardness(H) and Toughness(Kc) were increased to 38GPa; and 2.9 MPam$\^$$\frac{1}{2}$/, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.151-157
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• 2009

This paper reports the resistance change of conductive carbon nanotube (CNT) thin-films according to the temperature variation. Resistance of conductive CNT thin-films intrinsically has good thermal sensitivity, but shows environmental dependency. In order to reduce environmental effects, we spin-coated polydimethylsiloxane (PDMS) on the conductive CNT thin-films. We observed that conductive CNT thin-films with a PDMS encapsulation layer showed little environmental dependency, but more linear and stable temperature dependencies. If proper encapsulation is provided, conductive CNT thin-films can be used for temperature sensor applications.