• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.64-66
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• 1993

The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1034-1037
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• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.205-206
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• 2006

(BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• Journal of Industrial Technology
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• v.22 no.B
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• pp.141-146
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• 2002

It becomes common to use computers to control electronic devices and security facilities in newly constructed buildings and house. There are many home application devices in the market which can be controlled by computers. But they are expensive and managed by specialized companies. This paper is focused on personal computers which are available in most homes and can be used to control home electronic appliances and home security facilities. We implemented a home automation server based on Linux. The standard parallel port of personal computer is used to connect sensors and actuators. Therefore, the cost of the server is very low. Moreover, the server is connected to Internet and anywhere we can control and monitor the home security facilities and home automation systems.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.963-966
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• 2000

Abrasive jet machining(AJM) process is similar to the sand blasting, and effectively removes hard and brittle materials. AJM has applied to rough working such as deburring and rough finishing. As the needs for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro AJM was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro AJM in micro groove cutting of glass. Diameter of hole and width of line in this groove cutting is 80${\mu}{\textrm}{m}$. Experimental results showed good performance in micro groove cutting in glass, but the size of machined groove was increased about 2~4${\mu}{\textrm}{m}$. therefore, this micro AJM could be effectively applied to the micro machining of semiconductor, electronic devices and LCD parts.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.25-27
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• 2003

The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,