• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• The Journal of Engineering Research
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• v.1 no.1
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• pp.23-30
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• 1997

Energy transfer by free convection arises in many engineering applications, such as a hot steam radiator for heating a room, refrigeration coils, electric transformers, heating elements and electronic equipments. Generally unsteady natural convection flow in a horizontal channel with arbitrary wall temperatures and the mathematical and physical basis of convection transport has been considered in general. A physically meaningful exact solution of the problem has been obtained in a closed form by the application of the standard finite sine transform technique. Influences of the governing parameters, the Prandtl number and the Rayleigh number, to bring the flow and heat transfer to final steady states have been discussed separately. For constant values of the arbitray wall temperatures and of the function, determining the average axial velocity, the final steady state is approached in different times respectively for the cases when the Prandtl number Pr>1 and Pr<1. It is also seen that the function, representing the axial temperature gradient, is influenced by none of the governing parameters : but the steady state flow is influenced only by the Rayleigh number. There are, of course, many applications. Free convection strongly influences heat transfer from pipes and transmission lines, as well as from various electronic devices. It is also relevant to the environmental sciences, where it is responsible for oceanic and atmospheric motions, as well as related heat transfer processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.44-45
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• 2010

We are currently conducting studies on culturing and biocompatibility assessment of various cells such as neural stem cells and induced pluripotent stem cells(IPS cells) on carbon nanotube (CNT), on nerve regeneration electrodes, and on silicon wafers with a focus on developing nerve integrated CNT based bio devices for interfacing with living organisms, in order to develop brain-machine interfaces (BMI). In addition, we are carried out the chemical modification of carbon nanotube (mainly SWCNTs)-based bio-nanosensors by the plasma ion irradiation (plasma activation) method, and provide a characteristic evaluation of a bio-nanosensor using bovine serum albumin (BSA)/anti-BSA binding and oligonucleotide hybridization. On the other hand, the researches in the case of "novel plasma" have been widely conducted in the fields of chemistry, solid physics, and nanomaterial science. From the above-mentioned background, we are conducting basic experiments on direct irradiation of body tissues and cells using a micro-spot atmospheric pressure plasma source. The device is a coaxial structure having a tungsten wire installed inside a glass capillary, and a grounded ring electrode wrapped on the outside. The conditions of plasma generation are as follows: applied voltage: 5-9 kV, frequency: 1-3 kHz, helium (He) gas flow: 1-1.5 L/min, and plasma irradiation time: 1-300 sec. The experiment was conducted by preparing a culture medium containing mouse fibroblasts (NIH3T3) on a culture dish. A culture dish irradiated with plasma was introduced into a $CO_2$-incubator. The small animals used in the experiment involving plasma irradiation into living tissue were rat, rabbit, and pick and are deeply anesthetized with the gas anesthesia. According to the dependency of cell numbers against the plasma irradiation time, when only He gas was flowed, the growth of cells was inhibited as the floatation of cells caused by gas agitation inside the culture was promoted. On the other hand, there was no floatation of cells and healthy growth was observed when plasma was irradiated. Furthermore, in an experiment testing the effects of plasma irradiation on rats that were artificially given burn wounds, no evidence of electric shock injuries was found in the irradiated areas. In fact, the observed evidence of healing and improvements of the burn wounds suggested the presence of healing effects due to the growth factors in the tissues. Therefore, it appears that the interaction due to ion/radicalcollisions causes a substantial effect on the proliferation of growth factors such as epidermal growth factor (EGF), nerve growth factor (NGF), and transforming growth factor (TGF) that are present in the cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Journal of Korea Multimedia Society
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• v.9 no.5
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• pp.595-605
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• 2006

In this thesis, GPS and the electronic mapping were used to realize such a system by recognizing license plate numbers and identifying the location of objects that move at synchronous times with simulated movement in the electronic map. As well, throughout the study, a camera attached to a PDA, one of the mobile devices, automatically recognized and confirmed acquired license plate numbers from the front and back of each car. Using this mobile technique in a wireless network, searches for specific plate numbers and information about the location of the car is transmitted to a remote server. The use of such a GPS-based system allows for the measurement of topography and the effective acquisition of a car's location. The information is then transmitted to a central controlling center and stored as text to be reproduced later in the form of diagrams. Getting positional information through GPS and using image-processing with a PDA makes it possible to estimate the correct information of a car's location and to transmit the specific information of the car to a control center simultaneously, so that the center will get information such as type of the car, possibility of the defects that a car might have, and possibly to offer help with those functions. Such information can establish a mobile system that can recognize and accurately trace the location of cars.

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.6
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• pp.477-484
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• 2016

Small industrial appliances such as fan, audio, electric rice cooker mostly consist of ABS, PP, PS materials. In colored plastics, it is possible to classify by near infrared(NIR) spectroscopy, while in black plastics, it is very difficult to classify black plastic because of the characteristic of black material that absorbs the light. So the RBFNNs pattern classifier is introduced for sorting electrical and electronic waste plastics through LIBS(Laser Induced Breakdown Spectroscopy) spectrometer. At the preprocessing part, PCA(Principle Component Analysis), as a kind of dimension reduction algorithms, is used to improve processing speed as well as to extract the effective data characteristics. In the condition part, FCM(Fuzzy C-Means) clustering is exploited. In the conclusion part, the coefficients of linear function of being polynomial type are used as connection weights. PSO and 5-fold cross validation are used to improve the reliability of performance as well as to enhance classification rate. The performance of the proposed classifier is described based on both optimization and no optimization.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.887-892
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• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.442-448
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• 2021

In this work, the (K_1-xAg_x)(Ta_0.8Nb_0.2)O₃ (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K₂(Ta,Nb)₆O₁₆ phase were observed. Dielectric constant and dielectric loss of K(Ta_0.8Nb_0.2)O₃ specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K_0.7Ag_0.3)(Ta_0.8Nb_0.2)O₃ ceramics were 0.01024℃ and 0.01825 KmV^-1, respectively.

• Journal of IKEEE
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• v.23 no.2
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• pp.743-746
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• 2019

In this paper we proposed a new ocean radiation automatic monitoring system. The proposed system has the following characteristics: First, using NaI + PVT mixed detectors, the response speed is fast and precision analysis is possible. Second, the application of temperature compensation algorithm to scintillator-type sensors does not require additional cooling devices and enables stable operation in the changing ocean environment. Third, since cooling system is not needed, electricity consumption is low, and electricity can be supplied reliably by utilizing solar energy, which can be installed at the observation deck of ocean environment. Fourth, using GPS and wireless communications, accurate location information and real-time data transmission function for measurement areas enables immediate warning response in the event of nuclear accidents such as those involving neighboring countries. The results tested by the authorized testing agency to assess the performance of the proposed system were measured in the range of $5{\mu}Sv/h$ to 15mSv/h, which is the highest level in the world, and the accuracy was determined to be ${\pm}8.1%$, making normal operation below the international standard ${\pm}15%$. The internal environmental grade (waterproof) was achieved, and the rate of variation was measured within 5% at operating temperature of $-20^{\circ}C$ to $50^{\circ}C$ and stability was verified. Since the measured value change rate was measured within 10% after the vibration test, it was confirmed that there will be no change in the measured value due to vibration in the ocean environment caused by waves.