• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.820-823
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• 2013

Recently, the need for improving image quality of the image is increasing in various fields smartphones, cameras, and portable devices. How a significant impact on improving image quality of the image is a contrast enhancement, as a representative method to improve the contrast, the process of histogram equalization, various studies have been made. However, the method of histogram equalization general, by readjusting the only brightness, when the image histogram is biased to one side, due to changes in the excess brightness, distortions such as blocking phenomenon occurs. In this paper, we provide a contrast enhancement techniques through the compression and re-distribution of a well-balanced average brightness of the histogram distribution. By be differential compression histogram based on the histogram frequency in order to suppress the supersaturation phenomenon due to the increase in contrast ratio excessive repositioning well-balanced histogram lopsided, the proposed method, the balance of the brightness of the image I want to to take. The experimental results, the image brightness is balanced manner compared to conventional methods, the proposed method showed a good effect to improve the contrast without supersaturation phenomenon as compared with the conventional methods.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.332-336
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• 2009

When NCAs(non-conductive adhesives) are used for adhesion of micro-electronic devices, they often show problems such as delamination and cracking, due to the differences of CTE(coefficients of thermal expansion) between NCAs and substrates. Additions of inorganic particles or flexibilizers have been performed to solve those problems. The effects of silica addition on thermal/mechanical properties of amino modified siloxane(AMS)/silica/epoxy-nanocomposites were examined. The silica was treated by 3-glycidoxypropyltrimethoxysilane(GPTMS) for better compatibility between silica and epoxy matrix. AMS/silica/epoxy-nanocomposites filled with various amounts of AMS(1 and 3 phr) and various amounts of silica(3, 5 and 7 phr) were prepared. And Tg, moduli and CTE of nanocomposites were analyzed. Tg of AMS/Aerosil(non-modified silica)/epoxy-nanocomposites decreased from 125 to $118^{\circ}C$ with increasing Aerosil contents and moduli increased from 2,225 to 2,523 MPa with increasing Aerosil contents. Tg of AMS/M-silica (modified silica)/epoxy-nanocomposites decreased from 124 to $120^{\circ}C$ with increasing M-silica contents and moduli increased from 1,981 to 2,743 MPa with increasing M-silica contents. CTE of AMS/Aerosil/epoxy-nanocomposites and AMS/M-silica/epoxy-nanocomposites showed decreasing tendency regardless of the surface treatments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.17-23
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• 2020

This paper proposes a simulation model using an equivalent circuit for the development of an MMC system. The MMC has been chosen as the most suitable topology for high voltage power transmission, such as a voltage-type HVDC, and it has dozens to hundreds of sub-modules in the form of a half-bridge or full-bridge connected in series. A simulation study is essential for the development of an MMC algorithm. On the other hand, it is virtually impossible to construct and implement MMC simulation models, including hundreds or thousands of switching devices. Therefore, this paper presents an MMC equivalent model, which is easily expandable and implemented by modeling the dynamic characteristics. The voltage and current equation of the equivalent circuit was calculated using the direction of the arm current and switching signal. The model was implemented on Matlab/Simulink. In this paper, to show the validity of the model developed using Matlab/Simulink, the simulation results of a five-level MMC using the real switching element and the proposed equivalent model are shown. The validity of the proposed model was verified by showing that the current and voltage waveform in the two models match each other.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.346-351
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• 2009

Due to the decrease of line width and increase of the integration level of the device, it is expected that 'Bottom-up' method will replace currently used 'Top-down' method. Researches about 'Bottom-up' device production such as Nanowires and Nanobelts are widely held on. To utilize these technologies in devices, properties of matter should be exactly measured. Nano-indenters are used to measure the properties of nano-scale structures. Additionally, Nano-indenters provide AFM(Atomic Force Microscopy) function to get the image of the surface and get physical properties for exact position of nano-structure using this image. However, nano-indenter tips have relatively much bigger size than ordinary AFM probes, there occurs considerable error in surface image by Nano-Indenter. Accordingly, this research used 50nm Berkovich tip and 1um $90^{\circ}$ Conical tip, which are commonly used in Nano-Indenter. To find out the surface characteristics for each kind of tip, we indented the surface of thin layer by each tip and compared surface image and indentation depth. Then, we got image of 100nm-size structure by surface scanning using Nano-Indenter and compared it with surface image gained by current AFM technology. We calculated the errors between two images and compared it with theoretical error.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.103-111
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• 2003

A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.

• Journal of Broadcast Engineering
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• v.13 no.5
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• pp.651-661
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• 2008

This paper proposes a novel contrast enhancement (CE) algorithm for color images using the modified error diffusion (ED). After conventional color histogram equalization (HE), artifacts such as false contours are produced in the contrast enhanced image. The proposed CE algorithm using the modified ED consists of two parts: CE and ED. In the first part, a low-contrast input image is enhanced by the conventional HE method. In the second part, we use the modified ED algorithm. The inputs of the second part are the average and scaled difference images of the original color input image and the HE image, in which the scaled color difference image is diffused by the ED algorithm. In the proposed algorithm, the modified ED algorithm reduces the artifacts produced in the HE image, and increases the number of color levels. Computer simulations with a number of low-contrast color images show the effectiveness of the proposed CE method in terms of the visual quality as well as the probability mass function. It can be used as a post-processing for CE with simultaneous artifact reduction in various display devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.3-3
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• 2009

In order to investigate the possibility of using mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxialy on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the micro structure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with $J_c$'s (77K) over 2 MA/$cm^2$ and Tc's over 90K (${\Delta}T{\sim}2\;K$). We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The $J_c$ (77K, self field) and the value of onset $T_c$ of NEG123 thin film on LAO substrate was $4.0MA/cm^2$ and 92K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/$cm^2$ at 77K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1019-1026
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• 2017

The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.