• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.6
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• pp.97-104
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• 2010

In this paper, ICT (in circuit tester) inspection system and inspection algorithm is proposed and detects whether inferiority exists or not in the mounted device on the flexible PCB in cell phones or mobile display devices. The system is composed of PD (pin-driver) and GGM (ground guarding method). The structural characteristics of these flexible PCB are analyzed, which is needed to input or output the test signal. Test signal to investigate the characteristics of passive components is generated using modified circuit diagram and proposed inspection algorithm. PM (pin-map) is decided on the basis of circuit diagram and has the information about the kind of test signal to be applied and the pad number for the test signal to be connected. PD is designed to load a proper test signal for a specific pad and is adjusted according to PM so that the reconstructed circuit has minimum node and mash. The proposed ICT inspection system is realized using PD and GGM. Using the system, an experiment for each passive component is done to investigate the measurement accuracy of the developed system and an experiment for real flexible PCB model is done to verity the effectiveness of the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Composites Research
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• v.29 no.4
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• pp.194-202
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• 2016

A graphene film, two-dimensional carbon sheet, is a promising material for future electronic devices and so on. In graphene applications, the effect of substrate on the atomic/electronic structures of graphene is significant, so we studied an interaction between graphene film and substrate. To study the effect, we investigated the graphene films grown on Ni substrate with two crystal face of (111) and (100) by Raman spectroscopy, comparing with graphene films transferred on $SiO_2/Si$ substrate. In our study, the doping effect caused by charge transfer from Ni or $SiO_2/Si$ substrate to graphene was not observed. The bonding force between graphene and Ni substrate is stronger than that between graphene and $SiO_2/Si$. The graphene films grown on Ni substrate showed compressive strain and the growth of graphene films is incommensurate with Ni (100) lattice. The position of 2D band of graphene synthesized on Ni (111) and (100) substrate was different, and this result will be studied in the near future.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.5
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• pp.39-48
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• 2016

One of the major trends of automotive networking architecture is the introduction of automotive Ethernet. Ethernet is already used in single automotive applications (e.g. to connect high-data-rate sources as video cameras), it is expected that the ongoing standardization at IEEE (IEEE802.3bw - 100BASE-T1, respectively IEEE P802.3bp - 1000BASE-T1) will lead to a much broader adoption in future. Those applications will not be limited to simple point-to-point connections, but may affect Electric/Electronic(EE) Architectures as a whole. It is agreed that IP based traffic via Ethernet could be secured by application of well-established IP security protocols (e.g., IPSec, TLS) combined with additional components like, e.g., automotive firewall or IDS. In the case of safety and real-time related applications on resource constraint devices, the IP based communication is not the favorite option to be used with complicated and performance demanding TLS or IPSec. Those applications will be foreseeable incorporate Layer-2 based communication protocols as, e.g., currently standardized at IEEE[13]. The present paper reflects the state-of-the-art communication concepts with respect to security and identifies architectural challenges and potential solutions for future Ethernet Switch-based EE-Architectures. It also gives an overview and provide insights into the ongoing security relevant standardization activities concerning automotive Ethernet. Furthermore, the properties of non-automotive Ethernet security mechanisms as, e.g., IEEE 802.1AE aka. MACsec or 802.1X Port-based Network Access Control, will be evaluated and the applicability for automotive applications will be assessed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.105-112
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• 2009

In this paper, we investigated abnormal ESD failure on guard-rings in the smart power IC fabricated with $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology. Initially, ESD failure occurred below 200 V in the Machine Model (MM) test due to current crowding in the parasitic diode associated with the guard-rings which are generally adopted to prevent latch-up in high voltage devices. Optical Beam Induced Resistance Charge (OBIRCH) and Scanning Electronic Microscope (SEM) were used to find the failure spot and 3-D TCAD was used to verify cause of failure. According to the simulation results, excessive current flows at the comer of the guard-ring isolated by Local Oxidation of Silicon (LOCOS) in the ESD event. Eventually, the ESD failure occurs at that comer of the guard-ring. The modified comer design of the guard-ring is proposed to resolve such ESD failure. The test chips designed by the proposed modification passed MM test over 200 V. Analyzing the test chips statistically, ESD immunity was increased over 20 % in MM mode test. In order to avoid such ESD failure, the automatic method to check the weak point in the guard-ring is also proposed by modifying the Design Rule Check (DRC) used in BCD technology. This DRC was used to check other similar products and 24 errors were found. After correcting the errors, the measured ESD level fulfilled the general industry specification such as HBM 2000 V and MM 200V.

• Management & Information Systems Review
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• v.37 no.2
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• pp.63-85
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• 2018

Electronic displays have developed as instruments that function as windows of information to satisfy the bidirectional needs of electronic device manufacturers and users. The cathode-ray tube (CRT) display once dominated the display industry. Now, the liquid crystal display (LCD) is dominant, and promising displays are competing to become the next-generation display. Displays reflect the characteristics of the information and communication technology (ICT) industries, such as technological changes, innovative features, and competitive dynamics, and have technologically evolved to dominate the industry and market through various ICT devices. This research utilizes a dominant design concept and examines the case of the flat-panel display industry to propose a comprehensive framework, which considers technological, organizational, and environmental characteristics, of the determinants influencing dominance in the technology-intensive ICT industry. The results show that a dominant design in the flat-panel display industry emerges from technological competition among several designs, based on technological characteristics and market acceptance, and dominates the industry and market by various environmental factors. Our results emphasize the difference between generic technologies and the speed of technological innovation and expand the understanding of the emergence of a dominant design. Furthermore, this paper suggests practical implications for establishing a competition strategy and strategic guidance for other ICT industries as well as the display industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.4
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• pp.414-420
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• 2018

The digital convergence looking for new ways to engage visitors by superimposing virtual content on projection over the real world captured media contents. This paper propose the Light ID based interactive 3D immersive exhibition things view using HMD AR technology. This approach does not required to add any additional infrastructure to be built-in to enable service and uses the installed Lighting or displays devices in the exhibit area. In this approach, the Light ID can be used as a Location Identifier and communication medium to access the content unlike the QR Tag which supports provide the download information through web interface. This utilize the advantages of camera based optical wireless communication (OWC) to receive the media content on smart device to deliver immersive 3D content visualization using AR. The proposed exhibition method is emulated on GALAXY S8 smart phone and the visual performance is evaluated for Jeonju Hanok Village. The experimental results shows that the proposed method can give immersive 3D view for exhibit things in real-time.