• Journal of international Conference on Electrical Machines and Systems
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• v.3 no.3
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• pp.325-330
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• 2014

Eddy current induction is used in a wide range of electronic devices, for example in detection sensors. Due to the advances in computer hardware and software, the need for 3D computation and system comprehension is a requirement to develop and optimize such devices nowadays. Pure theoretical models are mostly limited to special cases. On the other hand, the classical use of commercial Finite Element (FE) electromagnetic 3D models is not computationally efficient and lacks modeling flexibility or robustness. The proposed approach focuses on: (1) implementing theoretical formulations in 3D (FE) model of a detection device as well as (2) an automatic Volumetric Estimation Method (VEM) developed to selectively model the target finite elements. Due to these two approaches, this model is suitable for parametric studies and optimization of the number, location, shape, and size of PCB receivers in order to get the desired target discrimination information preserving high accuracy with tenfold reduction in computation time compared to commercial FE software.

• Journal of Industrial Technology
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• v.34
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• pp.71-78
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• 2014

Recently, using the electronic devices was increased with semiconductor developments. So, the EMI(Electromagnetic interference) problem become to important issue for coexistence with each electronic devices. The EMI is caused by switching operation from the power switches as the FET and the transistor in power conversion devices. In this paper, the hybrid EMI filter that composed with active components and passive components was described. The EMI filter is applied to the 160 watts LED driver experimentally verify the performance. The hybrid EMI filter is compared with non-filter, only passive filter and only active filter. The proposed EMI filter attenuated CM noise more than traditional passive filter.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.6-9
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• 2005

Aging characteristics of 0.2PMN-0.8PZT multilayer ceramic actuators (MCA) has been investigated by applying both triangular wave function for unpoled and unipolar wave for poling. P-E hysteresis loops of the MCA had been distorted after about 90 million cycles running in triangular wave function. Effective electromechanical coupling coefficient was calculated in resonant and anti resonant frequencies. And pseudo-piezoelectric constant $d_{33}$ was also estimated from the strain versus electric field characteristics. The crack growth of MCA was clearly observed along to the boundary between electrode and inactive area. That results were thought due to the internal tensile stress came from both actuation of $d_{33}$ mode and motion of Poisson ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.366-369
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• 2001

In this study, the matrix Organic Electroluminescence (OEL) device, that was consisted of R,G,B pixels. We fabricated OEL devices by side by side methode and, used organic material Alq3 as green, DCM as red and Butyl PBD as blue ETL. We investigated the characteristic of brightness and current density for matrix OEL device. As the results, each color devices has minimum about $100cd/m^{2}$ brightness and maximum luminescence was $2500cd/m^2$ in green OEL device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.33-36
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• 1994

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.295-298
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• 1996

In this study, we have fabricated all solid state electrochromic devices using WO$_3$ film as the working electrode, V$_2$O$\_$5/ film as the counter electrode and PEO-LiClO$_4$-PC film as the solid electrolyte. The WO$_3$ thin films for working electrode and V$_2$O$\_$5/ thin films for counter electrode were deposited onto ITO glass by vacuum evaporation and were shown good electrochromic and state properties after 1x10$\^$5/ cycles. PEO-LiClO$_4$-PC polymer electrolyte can easily be formed into thin films, do not absorb in the visible region of the light. Therefore, such electrolyte have electrochromic properties suitable for large-scale all solid-state electrochromic devices. All solid-staeelectrochromic devices fabricated in this polymer electrolyte have optical modulation of 20%∼30% at 1.5 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.