• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.34-37
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• 2010

0.25 mm thickness super thin surface mounted device LED Lamp is developed with PCB type lead frame in which BT (Bismaleimide Triazine) resin is used. BT resin is removed by a laser beam in order to reduce the thermal resistance below $1\;^{\circ}C/W$ and transfer molding is used with silicone. Compared to conventional 0.4 mm thickness LED lamp, the developed LED lamp can be derived in high current and the luminance of the LED lamp is increased up to 240 mA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.613-617
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• 2014

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.214-217
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• 2017

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.383-386
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• 2008

Magnesium alloy sheets have been extending their field of applications to automotive and electronic industries taking advantage of their excellent light weight property. In addition to their excellent light property, magnesium alloys have several other advantages: high specific strength, good welding capability and corrosion resistance. Taking advantage of these benefits, magnesium alloys have also been substituting the polymeric materials in the electronic devices industries. In sheet metal forming application with magnesium alloys, the lower formability and high springback due to the lower elastic property (Young's modulus=45 GPa) at room temperature are major hurdles by which magnesium alloys have limited applications. In this study, commercial notebook case was adopted as the benchmark model, and then design parameters and process conditions are analyzed by the finite element simulation and physical try-outs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.689-693
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• 2005

Inkjet printing is a non-contact and direct writing associated with a computer. In the industrial field, there have been many efforts to utilize the inkjet printing as a new way of manufacturing, especially for electronic devices. For the application of inkjet printing to electronic field, one of the key factors is exact realization of designed images into printed patterns. In this work, micro patterning for conducting line has been studied using the piezoelectric print head and silver nano ink. Dimensions of printed images have been predicted in terms of print resolution and diameter of a single dot. The predicted and the measured values showed consistent results. Using the results, the design capability for industrial inkjet printing could be achieved.

• Annual Conference of KIPS
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• 2019.05a
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• pp.219-222
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• 2019

IoT 기술이 발달하면서 기기들 간의 안전한 통신을 위한 보안 시스템 탑재의 필요성이 대두되었다. 보안 시스템은 암호 키의 안전성과 밀접한 관련이 있기 때문에, 안전한 난수발생기를 통해 생성한 난수를 키로 사용하는 것이 중요하다. 그러나 제한된 리소스를 갖는 IoT 기기들의 특성으로 인해, 기존 난수발생기를 IoT 기기에 구현하기 어려운 문제가 있다. 이에 IoT 기기에서 사용 가능한 난수발생기에 대한 연구들이 진행되어 왔으며, 특히 IoT 기기들이 탑재하고 있는 각종 센서를 활용한 난수발생기의 설계 방안들이 활발히 연구되고 있다. 본 논문에서는 IoT 기기에 주로 탑재되는 센서를 5가지로 분류하고, 각각의 센서별로 난수성을 측정하는 연구들을 분석한다. 우리가 조사한 바에 따르면 이러한 센서들의 출력이 충분한 난수성을 제공하고 있으며, 본 논문에서 각 센서들을 활용하여 난수발생기를 설계한 연구들을 분류하고 특징을 살펴본다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.444-447
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• 2004

A heart diagnosis system adopts hundreds of Superconducting Quantum Interface Device(SQUID) sensors for precision MCG(Magnetocardiogram) or MEG(Magnetoencephalogram) signal acquisitions. This system requires correct and real-time data acquisition from the sensors in a required sampling interval, i.e., 1 mili-second. This paper presents our hardware design and test results, to acquire data from 256 channel analog signal with 1-ksample/sec speed, using 12-bit 8-channel ADC devices, SPI interfaces, parallel interfaces, and 8-bit microprocessors. We chose to implement parallel data transfer between microprocessors as an effective way of achieving such data collection. Our result concludes that the data collection can be done in 250 ${\mu}sec$ time-interval.