• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.700-706
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• 2001

In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.7-11
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• 2001

Utility boiler operators seeking to gain the greatest economic advantage from their units are faced with three challenges, namely the obligatory light-up fuel costs, the additional expense of supplementary fuel firing should they wish to use a cheaper fuel that may be beyond the original burner manufacturer’s stability and combustion performance assurances and the immediate environmental impact of both. The novel use of plasma arc technology can provide a solution to these challenges. This paper introduces the work being undertaken through a joint collaboration between the EU, Kazahkstan and Russia in order to develop a tried and tested engineering methodology and a mathematical based application and sensitivity analysis approach for the design and optimisation stage of these plasma devices that, as a consequence, their assist in their universal introduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.1-4
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• 1988

The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.726-730
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• 2001

Temperature stabilities of dielectric constraints and resonant frequencies of the substrates are very important in piezoelectric ceramics oscillators and filters. In this study, it was investigated temperature stability of the length-extensional vibration mode of Pb(Zr$\_$y/Ti$\_$1-y/)O$_3$+x[wt%]Cr$_2$O$_3$ ceramics. The mode can be utilized in fabricating ultra-small 455 kHz IF devices. Addition of Cr$_2$O$_3$ in morphotrophic phase PZT decreased the variations of dielectric constant, electro-mechanical coupling factor k$\_$31/ and resonant frequency by thermal shock. As additive weight of Cr$_2$O$_3$increased, the temperature coefficient of resonant frequency changed from positive number to negative one. And the composition tith temperature coefficient of resonant frequency was shifted to the one with increased Cr$_2$O$_3$ additive weigh by thermal aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.587-595
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• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.