• Title/Summary/Keyword: Electronic devices

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Modeling of Electrical Characteristics in Poly Silicon Thin Film Transistor with Process Parameter (다결정 실리콘 박막 트랜지스터에서 공정 파라미터에 따른 전기적 특성의 모델링)

  • Jung, Eun-Sik;Choi, Young-Sik;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.201-204
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    • 2001
  • In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

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Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor (유기 TFT로 구동한 유기 인광발광소자의 연구)

  • Kim, Yun-Myoung;Pyo, Sang-Woo;Kim, Jun-Ho;Shim, Jae-Hoon;Zyung, Tae-Hyung;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.312-315
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    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

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Research of Collaboration Environment for Mobile Devices(PDAs) (모바일 디바이스들의 협업환경에 관한 연구)

  • Kim, Dong-Seok;Jeong, Chang-Won;Kim, Myung-Hee;Joo, Su-Chong
    • Annual Conference of KIPS
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    • 2005.11a
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    • pp.1149-1152
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    • 2005
  • 본 연구에서는 모바일 장치 중 하나인 PDA와 센서를 이용해 수행할 수 있는 시나리오를 작성하고, 이를 이용해 구현할 수 있는 PDA 기반의 협업환경을 제안한다. 센서그룹에서의 정보수집, 센서그룹으로부터 PDA로의 정보전달, 정보를 가진 다수의 PDA들이 네트워크를 구성하여, 서로 정보를 공유하고, 그 정보를 활용하는 방법을 보인다. 본 환경에서 시나리오 수행을 위해 사용된 센서는 환경정보센서(MICA2)와 위치정보센서(Cricket System)이며, 각각의 센서 그룹을 구성하여 동작한다. PDA들 간의 네트워크는 TMO 스킴을 적용하여 정보를 전파 및 협업하기 위한 구조를 채택했다. 마지막으로 센서네트워크와 연동된 PDA들이 협업환경을 구성함으로써 가능한 서비스들을 제시하였다.

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Characterization of $V_2O_{5}$ as a Counter Electrode for Smart Windows (스마트 윈도우용 $V_2O_{5}$ 대향전극의 특성)

  • 김진;하승호;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.28-31
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    • 1994
  • We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.

Fabrication of a SOI Hall Device Using Si -wafer Dircet Bonding Technology (실리콘기판 직접접합기술을 이용한 SOI 흘 소자의 제작)

  • 정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.86-89
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    • 1994
  • This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

The Deposition of Platinum Thin Films for RTD and its Characteristics (측온저항체 온도센서용 백금 박막의 증착과 그 특성)

  • 정귀상;노상수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.224-227
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    • 1996
  • Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$$.$cm, resistivity of Pt thin film closed to the bulk value.

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A length dependance of monolayer films of long-chain fatty acids (장쇄지방산의 길이에 따른 단분자막의 특성 변화)

  • 구창권;김무군;송경호;박태곤
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.38-42
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    • 1996
  • The pressure-area isotherm of monolayer at the air-water interface were obtained and the LB films were fabricated onto a quartz slides and quartz crystal by conventional Langmuir-Blodggett(LB) method. The UV absorption spectra of Langmuir-Blodggett(LB) film on quartz slides and spectrum of monolayer formed on quartz crystal have been measured. The photoisomerization of the long-chain fatty avid containing azobenzene were obtained by the application of UV and visible light. The reversibility of photoisomerization were more clear difference when the number of C$\_$n/ increased. At the pressure-area isotherms, the value of surface pressure increment were decreased when the number of C$\_$n/ increased, A surface pressure of 20mN/m was obtained as a proper one for a film deposition. The photoisomerization at LB films were also obtained by application of UV and visible light. So the LB film of long-chain fatty acid containing azobenzene has possibility to being applies to functional molecular devices such as photomemory and light switching.

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Quantum Nanostructure of InGaAs on Submicron Gratings by Constant Growth Technique

  • Son, Chang-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.1027-1031
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    • 2001
  • A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

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Annealing Effect of Pb(La, Ti)$O_3$Thin Films Grown by Pulsed Laser Deposition for Memory Device Application (메로리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과)

  • 허창회;심경석;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.725-728
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

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Fabrication and characteristics of short channel nonvolatile SNOSFET memory devices (Short channel 비휘발성 SNOSFET 기억소자의 제작과 특성)

  • 강창수
    • Electrical & Electronic Materials
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    • v.4 no.3
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    • pp.259-266
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    • 1991
  • 1.5.mu.m의 찬넬길이를 갖는 short channel 비휘발성 SNOSFET 기억소자를 기존의 CMOS 1 Mbit 공정기술을 이용하여 제작하고 I$_{d}$-V$_{d}$ 및 I$_{d}$- V$_{g}$특성과 스윗칭 및 기억유지특성을 조사하였다. 그 결과 제작한 소자는 논리회로 설계에 적절한 전도특성을 가졌으며 스윗칭시간은 인가전압의 크기에 의존함을 보였다. 그리고 3V의 memory window 크기를 얻기 위해서 V$_{w}$ =+34V, t$_{w}$ =50.mu.sec 및 V$_{e}$=-34V, t$_{e}$=500.mu.sec의 펄스전압으로 각각 write-in과 erase할 수 있었다. 또한 기억상태는 10년이상 유지할 수 있음을 알 수 있었다.

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