• Title/Summary/Keyword: Electronic devices

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Design and Implementation of RPL-based Distributed MQTT Broker Architecture (RPL 기반 분산 MQTT 브로커 구조 설계 및 구현)

  • An, Hyunseong;Sa, Woojin;Kim, Seungku
    • Journal of Korea Multimedia Society
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    • v.21 no.9
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    • pp.1090-1098
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    • 2018
  • MQTT is a lightweight messaging protocol that can be used for low power IoT devices. The MQTT basically uses single MQTT broker to indirectly share message information between publishers and subscribers. This approach has a weakness in regard to traffic overflow, connection fault, security, etc. In this paper, we propose a distributed MQTT broker architecture that solves the problems in single MQTT broker structure. The distributed MQTT broker architecture is expected to support new application services that cannot be supported by a conventional MQTT architecture. We have designed and implemented a distributed MQTT broker architecture based on the RPL protocol that has been widely used for IoT network. The experiment results show that the proposed MQTT broker architecture represents better publishing/subscribing latency and network stability than the conventional MQTT broker architecture.

Onset on the Rate Limiting Factors of InP Film Deposition in Horizontal MOCVD Reactor (수평형 MOCVD 반응기 내의 InP 필름성장 제어인자에 대한 영향 평가)

  • Im, Ik-Tae;Sugiyama, Masakazu;Nakano, Yoshiyaki;Shimogaki, Yukihiro
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.73-78
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    • 2003
  • The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

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UNCONVENTIONAL TESTER FOR THE VERIFICATION OF GTO-MODEL-PARAMETERS AND FOR THE INVESTIGATION FO THE CURRENT DENSITY DISTRIBUTION IN GTO TABLETS

  • Henry G ldner;Andreas Thiede;Lutz G hler;Schulze, Hans-Joachim;Jakob Sigg;Johann Otto;Dieter Metzner
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.246-251
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    • 1998
  • This paper describes the main features of an unconventional tester for high power semiconductor devices. Two application ranges are highlighted. The tester is used for the extraction of GTO parameters and their verification by measurements. The second field comprises the determination of the radial and azimuthal current density distribution of a GTO tablet. The results are compared with the carrier lifetime distribution.

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Three-Level SEPIC with Improved Efficiency and Balanced Capacitor Voltages

  • Choi, Woo-Young;Lee, Seung-Jae
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.447-454
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    • 2016
  • A single-ended primary-inductor converter (SEPIC) features low input current ripple and output voltage up/down capability. However, the switching devices in a two-level SEPIC suffer from high voltage stresses and switching losses. To cope with this drawback, this study proposes a three-level SEPIC that uses a low voltage-rated switch and thus achieves better switching performance compared with the two-level SEPIC. The three-level SEPIC can reduce switch voltage stresses and switching losses. The converter operation and control method are described in this work. The experimental results for a 500 W prototype converter are also discussed. Experimental results show that unlike the two-level SEPIC, the three-level SEPIC achieves improved power efficiency with balanced capacitor voltages.

Effective Ionic Wind Generation of a Surface Discharge Type Ionic Air Pump (연면 방전형 이온풍 발생장치의 고효율 풍속발생)

  • Jung, Jae-Seung;Moon, Jae-Duk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.9
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    • pp.1594-1598
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    • 2008
  • The ionic air pump can be used towards the thermal management of micro-electronic devices, since the size of pump can be reduced to micrometer orders. In addition, an air pump allows air flow control and generation with low noise and no moving parts. These ideal characteristics of the pump give rise to variety applications. However, all of these applications would benefit from maximizing the flow velocities of the pumps. In this study a surface discharge type air pump, with a third electrode, has been investigated by focusing on elevating the wind velocity and efficiency. As a result, the enhanced ionic wind velocity could be obtained with the third electrode of the proposed air pump.

Feeder Loop Line Control for the Voltage Stabilization of Distribution Network with Distributed Generators

  • Jeong, Bong-Sang;Chun, Yeong-Han
    • Journal of Electrical Engineering and Technology
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    • v.9 no.1
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    • pp.1-5
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    • 2014
  • When renewable sources are connected to the distribution network in the form of a distributed generators(DGs), the effect of intermittent output appears as voltage fluctuation. The surplus power at the consumer ends results in the reverse power flow to the distribution network. This reverse power flow causes several problems to the distribution network such as overvoltage. Application of the reactive power control equipment and power flow control by means of BTB inverter have been suggested as the general solutions to overcome the overvoltage, but they are not economically feasible since they require high cost devices. Herein, we suggest the feeder loop line switch control method to solve the problem.

Degradation Behavior of Critical Current in Bi-2223 Superconducting Tape in Bending-Tension Mixed Mode (인장-굽힘모드에서 Bi-2223 초전도 테이프의 임계전류 열화거동)

  • Shin, Hyung-Seop;Kim, Byung-Soo;Choi, Ho-Yeon;Oh, Sang-Soo;Ha, Dong-Woo;Ha, Hong-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.573-576
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    • 2003
  • HTS superconducting tapes are now commercially available for practical applications such as magnets and cables. Since superconductors in such applications are subjected to high mechanical loads that can significantly degrade the superconducting properties, mechanical properties and the strain tolerance known as the strain effect on superconducting properties are needed to be estimated for developing superconducting devices. Influences of loading mode on the Ic degradation and the interaction on strain effect were discussed in this study.

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A Comparative Analysis of I-V Characteristics in a single Channel Superconducting Flux Flow Transistor (단일채널 고온초전도 자속흐름 트랜지스터의 I-V 특성 비교분석)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Choi, Myong-Ho;Lee, Jong-Hwa;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.107-110
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    • 2003
  • We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.

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Analysis of Electromagnetic Repulse Forces of MCCB (배선용 차단기의 전자 반발력에 관한 연구)

  • Kim, Kil-Sou;Lim, Kee-Joe;Kang, Seong-Hwa;Cho, Hyun-Kil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.593-596
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    • 2001
  • It is necessary for calculation of repulsion forces acting on the closed electric contacts flowing over-current. e.g. inrush current and overload currents, to do optimum design of switching devices. In this paper. the forces and flux densities generated by currents at the contact point when circuit breakers are in closed state are obtained by using 3D finite element methode. To be convinced of the results, we measure electrogmanetic repulsion forces on contacts by measuring voltage between opened contacts in MCCB

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Analysis on the defect and scratch of Chemical Mechanical Polishing Process (CMP 공정의 Defect 및 Scratch의 유형분석)

  • Kim, Hyung-Gon;Kim, Chul-Bok;Kim, Sang-Yong;Lee, Cheol-In;Kim, Tae-Hyung;Chang, Eui-Goo;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.189-192
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    • 2001
  • Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

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