• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.67-67
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.450-455
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• 2007

LCD color filters have been manufactured in a process called photolithography to date, but various printing methods have been studied currently in response to the trend of low-end LCD panels. Direct Printing Process is a suitable fabrication technique to develope pigment components whose dimensions are in nano. The success of this process depends on the systematic preparation of pigment millbase. Conventional millbase dispersions are constituted of the organic pigments, monomer, dispersant and solvents. An experimental study on the rheology of millbase dispersions is presented. Subsequently, this thesis attempts to find out the dispersive characteristics as well as the selection of pigments, monomers and dispersants in the part of millbase among the stages of manufacturing LCD color filters using the direct printing methods. The dispersive characteristics were shown through analytic devices such as PSA, Rheometer, etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.99-100
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• 2009

탄화규소를 이용한 1200V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 1200V 내압을 얻기 위해서 불순물 농도가 5E15/cm3이고 에피층의 두께가 12um인 상용 탄화규소 웨이퍼를 기준으로 하였으며 채널 저항을 줄이기 위해 채널길이를 $0.5{\mu}m$로 하였다. 게이트전압이 13V, 드레인 전압이 4V에서 specific on-resistance 값은 $12m\;{\Omega}cm^2$로 매우 우수한 특성을 보이고 있다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.250-252
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• 2017

High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.184-188
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• 1999

The power semiconductor switching devices(PSSD) continuously developed, Power Electronic Technology using PSSD is gradually extended. The high frequency inverter to generate the large power high frequency subject to power electronic technology pursuit various applications. Also, in emboss with environmental destruction problem cause the atmosphere and the water pollution to growth of the commercial society, the research in favor of cleaning environmental a pollutant actively proceed. Therefore, This paper describe study on the high frequency pulse power supply. The theoretical results are in good agreement with the experimental ones. The proposed pulse power supply is considerated to be useful for discharge lamp.

• Membrane and Water Treatment
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• v.4 no.4
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• pp.251-263
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• 2013

The internal reflux effect on dialysis through the retentate phase of a countercurrently cross-flow rectangular module is investigated. Theoretical analysis of mass transfer in cross-flow devices with or without recycling is analogous to heat transfer in cross-flow heat exchangers. In contrast to a device without reflux, considerable mass transfer is achievable if cross-flow dialyzers are operated with reflux, which provides an increase in fluid velocity, resulting in a reduction in mass-transfer resistance. It is concluded that reflux can enhance mass transfer, especially for large flow rate and feed-concentration operated under high reflux ratio.