• Transactions on Electrical and Electronic Materials
• /
• 제6권5호
• /
• pp.229-232
• /
• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.103-106
• /
• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• 대한화학회지
• /
• 제53권1호
• /
• pp.42-50
• /
• 2009

유전율-분광법과 교류 전도도 측정 연구를 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에 시도하였다. 373-723K 온도와 100Hz-1MHz 주파수 영역에서 loss 탄젠트 (Tan$\delta$), 상대적 유전율 ($\varepsilon_{r}$) 그리고 교류 전도 도 ($\sigma_{ac}$)의 의존성을 혼입 유도체들에 대하여 조사하였다. 다양한 전도도 메커니즘이 존재하는데 MSLT-1과 MSLT-2의 경우에는 낮은 온도영역에서 전자에 의한 전도도를 보인다. MSLT-3의 경우에는 금지된 층간 이온 전 도도가 전자 전도도와 함께 존재한다. 이러한 층간 이온 전도도는 모든 혼입 유도체들에 대하여 중간 온도 영역에 존재한다. 가장 높은 온도 영역에서는 MSLT-1과 MSLT-2의 경우에는 이온 전도도와 polaron에 의한 전도도가 존재하고 MSLT-3에 대하여는 이온 전도도 만이 존재한다. 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에서 Loss 탄젠트 (Tan$\delta$)는 전자 전도도와 쌍극자의 위치, 그리고 공간 전하 분극화에 기인한다. 상대적 유전율의 증가는 층간 에 쌍극자 수의 증가에 기인하고 반면 상대적 유전율의 감소는 높은 혼입율에 따른 누전 전류의 증가에 기인한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.531-532
• /
• 2005

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

• 전력전자학회논문지
• /
• 제24권4호
• /
• pp.259-267
• /
• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.

• Transactions on Electrical and Electronic Materials
• /
• 제14권1호
• /
• pp.43-46
• /
• 2013

In order to develop electrical insulation material, organically modified layered silicate was incorporated into an epoxy matrix to prepare nanocomposite. Transmission electron microscopy (TEM) observation showed that organophillic clay was in an exfoliated state, while hydrophilic clay was not dispersed into nanolayers within the epoxy matrix. Epoxy/organophilic clay (2.8 wt%) nanocomposite was mixed and cured at $150^{\circ}C$ for 4.5 hr. I-V characteristics, volume resistance and dielectric properties for the cured nanocomposite were estimated. Current density increased with increasing temperature, and volume resistance decreased with increasing temperature, in neat epoxy and epoxy/organophilic clay (2.8 wt%) nanocomposite. As frequency increased, the dielectric loss value decreased in the two systems.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.263-266
• /
• 1998

ZnO varistors have an excellent non-linearity and a large surge-energy absorption capability. For these reasons, the ZnO varistors are widely used to protect electrical/electronic circuits from an abnormal surge and/or noise signal. In order to obtain the low-voltage varistor with randomly distributed large seed grain within bulk, the ZnO varistors are made by a new three-composition seed grain method. And a conduction mechanism of varistors, which was observed in the temperature range of 30 ∼ 120$^{\circ}C$ and at the current range of 10$\^$-8/∼10$^2$ A/cm$^2$, was classified by the three regions of different mechanism when the current was increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.5-8
• /
• 1997

A study on the electrical conduction characteristics of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir- Blodgett(LB) technique has recently been attracted interest as a method of the deposition ultrathin films. We hate fabricated N-docosyl N\`-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the molecular orientation and electrical conduction characteristics. We have measured infrared transmission-reflection spectra. The alkyl chain is found to he well-ordered with the tilt angle of 13$^{\circ}$ with respect to the substrate surface normal and the TCNQ plane is tilted at 76$^{\circ}$ the surface normal. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on the incident angle, which indicates conducting species change. The in-plane conductivity of 31 lagers is approximately 1.33$\times$10$^{-6}$ S/cm. The ohmic behaviour was observed below 0.6 V, when current-voltage(I-V) characteristics was measured verically.

• E2M - 전기 전자와 첨단 소재
• /
• 제11권11호
• /
• pp.9-17
• /
• 1998

The dependence of the ionic conductivity on the B-site ion substitution in (Li0.5La0.5)Ti1-xMxO3 (M=Sn, Zr, Mn, Ge) system has been studied. Same valence state and various electronic configuration and ionic radius of Sn4+, Zr4+, Mn4+ and Ge4+(4d10(0.69$\AA$), 4p6(0.72$\AA$), 3d10(0.54$\AA$) and 3d3(0.54$\AA$), respectively) induced the various crystallographic variaton with substitutions. So it was possibleto investigate the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic variations. We found that the conductivity increased with decreasing the radii of B-site ions or vice versa and octahedron distortion disturb the ion conduction. The reason for this reciprocal proportion of conductivity on the radius of B-site ions has been examined on the base of the interatomic bond strength change due to the cation substitutions. The results were good in agreement with the experimental results. Therefore it could be concluded that the interatomic bond strength change due to the cation substitutions may be the one of major factors influencing the lithium ion conductivity in perovskite(Li0.5La0.5) TiO3system.

• Journal of Mechanical Science and Technology
• /
• 제16권10호
• /
• pp.1320-1326
• /
• 2002

In a one-dimensional heat conduction domain with heated and insulated walls, an integral approach is proposed to estimate time-dependent boundary heat flux without internal measurements. It is assumed that the expression of the heat flux is not known a priori. Hence, the present inverse heat conduction problem is classified as a function estimation problem. The spatial temperature distribution is approximated as a third-order polynomial of position, whose four coefficients are determined from the heat fluxes and the temperatures at both ends at each measurement. After integrating the heat conduction equation over spatial and time domain, respectively, a simple and non-iterative recursive equation to estimate the time-dependent boundary heat flux is derived. Several examples are introduced to show the effectiveness of the present approach.