• 전력전자학회논문지
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• 제23권5호
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• pp.299-304
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• 2018

An ideal circuit breaker should supply electric power to loads without losses in a conduction state and completely isolate the load from the power source by providing insulation strength in a break state. Fault current is relatively easy to break in an Alternating Current (AC) circuit breaker because the AC current becomes zero at every half cycle. However, fault current in DC circuit breaker (DCCB) should be reduced by generating a high arc voltage at the breaker contact point. Large fire may occur if the DCCB does not take sufficient arc voltage and allows the continuous flow of the arc fault current with high temperature. A semiconductor circuit breaker with a power electronic device has many advantages. These advantages include quick breaking time, lack of arc generation, and lower noise than mechanical circuit breakers. However, a large load capacity cannot be applied because of large conduction loss. An extinguishing technology of DCCB with polymeric positive temperature coefficient (PPTC) device is proposed and evaluated through experiments in this study to take advantage of low conduction loss of mechanical circuit breaker and arcless breaking characteristic of semiconductor devices.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.144-145
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• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 추계학술대회 논문집
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• pp.79-82
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• 2001

New electronic ballast for metal halide laws is proposed New ballast has higher efficiency than that of conventional ballast. Proposed 2 stage ballast uses low arm switch as synchronous rectifier mitch. Switch-on voltage drop is smaller than that of diode in small current(<1.5A). High arm switch is turned on in zero voltage in proposed ballast. So conduction loss and switching loss are reduced Index word - synchronous rectifier mitch, toro voltage switching, conduction loss, switching loss.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.235-238
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• 1996

In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through from the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance ㅐf the breakdown strength was higher.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.818-821
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• 2012

본 연구에서는 이중게이트 MOSFET의 전도중심에 따른 문턱전압의 변화를 분석할 것이다. DGMOSFET에 대한 단채널효과 중 문턱전압의 이동은 정확한 소자동작에 저해가 되고 있다. 문턱전압분석을 위하여 포아송방정식의 분석학적 전위분포를 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였다. 소자 파라미터인 채널길이, 채널두께, 게이트산화막두께 그리고 도핑농도 등에 대하여 전도중심의 변화에 대한 문턱전압의 변화를 관찰하였다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압특성을 분석할 것이다. 분석결과 문턱전압은 소자 파라미터에 에 대한 전도중심의 변화에 크게 영향을 받는 것을 관찰할 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.825-828
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• 2012

본 연구에서는 이중게이트 MOSFET의 전도중심에 따른 항복전압의 변화를 분석할 것이다. DGMOSFET에 대한 단채널효과 중 낮은 항복전압은 소자동작에 저해가 되고 있다. 항복전압분석을 위하여 포아송방정식의 분석학적 전위분포를 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였다. 소자 파라미터인 채널길이, 채널두께, 게이트산화막두께 그리고 도핑농도 등에 대하여 전도중심의 변화에 대한 항복전압의 변화를 관찰하였다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 항복전압특성을 분석할 것이다. 분석결과 항복전압은 소자파라미터에에 대한 전도중심의 변화에 크게 영향을 받는 것을 관찰할 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제12권1호
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• pp.1-20
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• 2021

In-depth knowledge of electrode processes is crucial for determining the electrochemical performance of lithium-ion batteries (LIBs). In particular, the conduction mechanisms of charged species in the electrodes, such as lithium ions (Li+) and electrons, are directly correlated with the performance of the battery because the overall reaction is dependent on the charge transport behavior in the electrodes. Therefore, it is necessary to understand the different electrochemical processes occurring in electrodes in order to elucidate the charge conduction phenomenon. Thus, it is essential to conduct fundamental studies on electrochemical processes to resolve the technical challenges and issues arising during the ionic and electronic conduction. Furthermore, it is also necessary to understand the transport of charged species as well as the predominant factors affecting their transport in electrodes. Based on such in-depth studies, potential approaches can be introduced to enhance the mobility of charged entities, thereby achieving superior battery performances. A clear understanding of the conduction mechanism inside electrodes can help overcome challenges associated with the rapid movement of charged species and provide a practical guideline for the development of advanced materials suitable for high-performance LIBs.

• 설비공학논문집
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• 제7권2호
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• pp.266-275
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• 1995

A numerical investigation on the conduction-natural convection-surface radiation conjugate heat transfer in the enclosure having substrate and chips has been performed. A 2-dimensional simulation model is developed by considering heat transfer by conduction, convection and radiation. The solutions to the equation of radiative transfer are obtained by the discrete ordinates method using S-4 quadrature. The effects of Rayleigh number and the substrate-fluid thermal conductivity ratio on the cooling of chip are analyzed. The result shows that radiation is the dominant heat transfer mode in the enclosure.