• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.321-324
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• 1991

In this study, $(Sr{\cdot}Pb)TiO_3$ series ceramics which is used in high voltage were fabricated by the mixed oxide method, and the electrical conduction mechanism and D.C. breakdown voltage characteristics of the specimens in accordance with the contents of $Bi_2O_3{\cdot}3TiO_2$ were investigated. As a result, the leakage current was increased with the contents of $Bi_2O_3{\cdot}3TiO_2$ and the measuring temperature. At room temperature, the leakeage current was showed a tendency of saturating when D.C. electrical field of $l5{\sim}30$[kV/cm] was applied to the specimen. As a result of breakdown voltage characteristics. breakdown strength was decreased when the contents of $Bi_2O_3{\cdot}3TiO_2$ were increased. On the other hand, in the temperature region below $60[^{\circ}C]$, the electronic breakdown was occured, and in the temperature region from 60 to $200[^{\circ}C]$, the thermal breakdown was occured by the Joule heat and the dissipation factor.

• 한국항해항만학회지
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• 제35권7호
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• pp.569-573
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• 2011

In this paper, we developed a Smart Heat Radiating Sheet(SHRS) having the absorption ability of more than 15 dB, and thermal conduction rate more than 20 W/mk for port logistics RFID(Radio Frequency IDentification) system by using AMP(Amorphous Metal Powder) and shielding sheet. Firstly, the EM(Electro_Magnetic) wave absorber samples were fabricated by using AMP and CPE (Chlorinated Polyethylene) with different composition ratios of 80 : 20 wt.% and 85 : 15 wt.%, respectively. Secondly, we fabricated the Smart Heat Radiating Sheet using the shielding sheet to attach EM Wave Absorber. As a result, the Smart Heat Radiating Sheet with absorption ability of 16 dB at 433 MHz and thermal conduction rate is 24 W/mk has been developed with the composition ratio of Amorphous Metal Powder : CPE = 85 : 15 wt.% and thickness of 5.5 mm.

• Applied Science and Convergence Technology
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• 제23권4호
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• Corrosion Science and Technology
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• 제19권3호
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• pp.156-162
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• 2020

The objective of this study was to investigate delayed oxygen evolution and localized corrosion resistance of titanium alloys by performing potentiodynamic polarization, potentiostatic polarization, and Mott-Schottky measurements. Delayed oxygen evolution was compared among titanium alloys, 316 stainless steel, and platinum. Difference in delayed oxygen evolution between titanium alloys and other metals was attributed to specific surface characteristic of each metal. Delayed oxygen evolution of titanium alloys resulted from the predominant process of ionic conduction over electronic conduction. The effect of oxygen evolution on localized corrosion of titanium alloys was investigated using electrochemical critical localized corrosion temperature (E-CLCT) technique. Mott-Schottky measurement was performed to clarify the difference in film properties between titanium alloys and stainless steels. Titanium alloys were found to have much lower donor density than stainless steels by 1/28. These results indicate that delayed oxygen evolution has little influence on the concreteness of passive film and the resistance to localized corrosion of titanium alloys.

• Bulletin of the Korean Chemical Society
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• 제13권2호
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• Journal of the Optical Society of Korea
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• 제19권3호
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• 한국재료학회지
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• 제21권2호
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2201-2208
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• 2014

In this research, the characteristics of Brush-less DC (BLDC) motor in accordance with winding connection method, both Y-connection and D -connection, has been identified with design methodology simply. BLDC motor has been designed for both winding connections, and their torque analysis has been performed considering ideal current source analysis and voltage source analysis with 6-step control. In addition, to reduce torque ripple of BLDC motor, caused by coil inductance, on voltage source analysis with 6-step control, we have proposed suitable control method which is Phase Advance Control. It is verified that the torque ripple has been decreased by virtue of phase advance control, advancing and widening conduction angle of switching, via performance analysis by Finite Element Analysis.

• 전기학회논문지
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• 제62권8호
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• pp.1101-1107
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• 2013

A light emitting diodes(LED) lighting has been increasingly used due to its low power consumption, long life time, high efficiency, and environment friendly characteristics. Also various power converters has been applied to drive these LED lighting. Among many power converters, a LLC resonant converter could be applied for LED lighting because of its high efficiency and high power density. Furthermore, the function of power factor correction(PFC) might be added. In this paper, 1-stage asymmetrical LLC resonant converter is proposed. The proposed converter performs both input-current harmonics reduction and PFC using the discontinuous conduction mode(DCM). The proposed 1-stage LLC resonant converter approach has the lower voltage stress across switching devices and achieve the zero voltage switching(ZVS) in switching devices. To verify the performance of the proposed converter, simulation and experimental results from a 300[W] prototype are provided.

• 한국결정성장학회지
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• 제17권5호
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.