• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.459-462
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• 2001

Interface effects on properties of NTC thermistors having Mn-Co-O spinel crystal structure system are analyzed by a mixing rule in case of mixed types and layered types between CuO and Al$_2$O$_3$ added compounds. With adding CuO and Al$_2$O$_3$, The compounds form completely solid solution and their resistance and B constant are changed due to the variation of conduction electrons by their ionic substitutions. The properties of mixed NTC thermistors are depended on the logarithmic mixing rule by a dispersed phase and they show slightly lower values due to the lattice mixing affect in compared with calculated values. The resistance of layered NTC thermistors is depended upon the series mixing rule containing the value of an interface layer and effected by the variation of its thickness, and it is changed rapidly to the logarithmic mixing rule by the connection between two layers with increasing the interface layer

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.57-61
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• 2002

This paper presents a current-source-inverter based on a buck-boost configuration and its application for residential photovoltaic system. The proposed circuit has five switches. Among them, only one switch acts as chopping, and the other determine the polarity of output; therefore, it can reduce the switching loss. Because the input inductor current is operated on the discontinuous conduction mode, high power factor can be achieved without additional input current controller. So the overall system shows a simple structure. The operational modes are analysed in depth, and then it was verified through the experimental results using a 150 W prototype.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.507-508
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• 2007

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.374-377
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• 1999

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. This paper describes temperature dependence of conductivity, impedance spectroscopy, electrochemical properties of PVDF/PAN electrolytes as a function of a mixed ratio. PVDF/PAN based polymer electrolyte films were prepared by thermal gellification method of preweighed PVDF/PAN, plasticizer and Li salt. The conductivity of PVDF/PAN electrolytes was 10-3S/cm. 20PVDF5PANLiCIO$_4$PC$\sub$10//EC$\sub$10/ electrolyte shows the better conductivity of the others. 20P7DF5PANLiCI$_4$PC$\sub$10//EC$\sub$10/ electrolyte remains stable up to 5V vs. Li/Li$\^$+/. Steady state current method and ac impedance used for the determination of transference numbers in PVDF/PAN electrolyte film. The transference number of 20PVDF5ANLICIO$_4$/PC $\sub$10//EC$\sub$10/ electrolyte is 0.48

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.42-45
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• 2002

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.85-86
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• 2005

In case of attaching thermoelectric module and heat source, the polymer sheet is attached on the $Al_2O_3$ plate, which is cooling side of thermoelectric module, in order to enhance mechanical safety of the system. It is impossible to calculate the exact distribution of temperature and flow pattern of inner gap of thermoelectric module. Therefore CFD analyses was executed to determine the thermo-fluid phenomena and distribution by Fluent. As the result of these analyses, heat transfer was dominated by conduction and the difference of temperature was linear distribution according to the thickness of polymer sheet.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.142-143
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• 2006

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in the amorphous TFTs(a-Si:H TFTs). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs which might originate from the influence of the hopping conduction.