• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.441-444
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• 1999

This paper analyzed arbitrary Energy band profile heterostructures by solving Schrodinger\`s equation the Poisson's equation self-consistently. Four different concentrations positively ionized donors holes in the valence band free electrons in the conduction band and 2DEG are taken to account for the whole system. 2DEG from both of the structures are obtained and compared with the data available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained. Finally theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.613-616
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• 1999

Polyehtylene[PE] in polymer insulation materials of used power cable have carried out in abundance of experiment and study for electrical conduction, insulation breakdown, dielectric character and so on. when apply to field for power cable to make PE, application of DC withstand test to put in practice for inspection is get to effect accumulated space charge. In this paper, to make use of Pulsed Electro-Acoustic(PEA), It is analysis to take shape space charge under AC and DC, clear up the point at issue for DC withstand test impressing

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.136-139
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• 2000

Epoxy materials are used as insulation material for electric power cables. In the case of a flow of excess current due to the temperature difference which occurs between the heat of the conductor and the atmosphere, heat degrades connection point of the cables. Also, the mechanical stress, which occurs due to the thermal expansion coefficient of cable connection electrode system and epoxy insulation materials along with the gap between thermal conduction based on the extra high voltage of transmitted voltage, increases possibility of cracks to occur. The relationship between mechanical stress and electrical breakdown mechanism is verified for the epoxy materials such as high toughness epoxy materials, which comes to be used contemporarily, and for the breakdown mechanism of epoxy materials on the multi-stresses (mechanical and electrical) due to the variation of the temperature.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.38-41
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• 2002

We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.696-701
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• 1996

In this study, deposited lipid membranes on the electrode and detected thermally stimulated displacement current generated from it. The researchers examined displacement current of electric conduction organic monolayer generated due to orient change of monolayers alkylchain and changed of dipole moment vertical component due to thermally stimulated. We paid attention to the phase transition temperature obtained by the thermally stimulated displacement current of lipid membrane layers this time. We detected the thermally stimulated displacement current peak of layers. From above results the transition temperature dilauroylphosphatidylcholine layers is about 43.deg. C. This study also compared above results with those obtained by differential thermal analysis method.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.263-269
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• 2018

In this study, a selective inverter operation between a 2-level voltage source converter (VSC) and a 3-level T-type VSC (3LT VSC) is proposed to improve the efficiency of a 3LT VSC. The 3LT VSC topology, except for its neutral-point switches, has similar operations as that of the 2-level VSC. If an operation mode is changed according to efficiency, the efficiency can be improved because efficiencies of each methods are depending on current and MI (Modulation Index). The proposed method calculates the power losses of the two topologies and operates as the having lower losses. To calculate the losses, the switching and conduction losses based on the operation mode of each topology were analyzed. The controller determined the operation mode of the 2- or 3-level VSC based on the power loss calculated during every cycle. The validity of the proposed control scheme was investigated through simulation and experiments. The waveform and average efficiency of each method were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.77-81
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• 1992

$C_{22}$-Quinolium-TCNQ LB films were deposited on the glass substrates by Langmuir-Blodgett technique at room temperature. Transfer ratios and UV-visible absorption spectra were studied for X, Y and Z-Types. Absorption in Z-Type was higher than X and Y-Types, which indicates a better arrangement in this type. We have also investigated dc electrical conductivities and ac responses along the horizontal and vertical direction to the film surface. As a result, we are able to determine the capacitance of film and the measured horizontal conductivity was about $10^{-7}$~$10^{-8}$ S/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.67-75
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• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.61-67
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• 1997

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.