• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.26-26
• /
• 2003

Lithium storage electrodes for rechargeable batteries require mixed electronic-ionic conduction at the particle scale in order to deliver desired energy density and power density characteristics at the device level. Recently, lithium transition metal phosphates of olivine and Nasicon structure type have become of great interest as storage cathodes for rechargeable lithium batteries due to their high energy density, low raw materials cost, environmental friendliness, and safety. However, the transport properties of this family of compounds, and especially the electronic conductivity, have not generally been adequate for practical applications. Recent work in the model olivine LiFePO$_4$, showed that control of cation stoichiometry and aliovalent doping results in electronic conductivity exceeding 10$^{-2}$ S/cm, in contrast to ~10$^{-9}$ S/cm for high purity undoped LiFePO$_4$. The increase in conductivity combined with particle size refinement upon doping allows current rates of >6 A/g to be utilized while retaining a majority of the ion storage capacity. These properties are of much practical interest for high power applications such as hybrid electric vehicles. The defect mechanism controlling electronic conductivity, and understanding of the microscopic mechanism of lithiation and delithiation obtained from combined electrochemical and microanalytical techniques, will be discussed

• Journal of Power Electronics
• /
• v.9 no.6
• /
• pp.823-834
• /
• 2009

This paper proposes a high-efficiency single-stage ac/dc converter. The proposed converter features low voltage stresses and reduced switching losses. It operates at the boundary of discontinuous- and continuous-conduction modes by employing variable switching frequency control. The turn-on switching loss of the switch can be reduced by turning it on when the voltage across it is at a minimum. The voltage across the bulk capacitor is independent of the output loads and maintained within the practical range for the universal line input, so the problem of high voltage stress across the bulk capacitor is alleviated. Moreover, the voltage stress of the output diodes is clamped to the output voltage, and the output diodes are turned off at zero-current. Thus, the reverse-recovery related losses of the output diodes are eliminated. The operational principles and circuit analysis are presented. A prototype circuit was built and tested for a 150 W (50V/3A) output power. The experimental results verify the performance of the proposed converter.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.189-198
• /
• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• Journal of Power Electronics
• /
• v.13 no.4
• /
• pp.619-625
• /
• 2013

Switched mode power supplies (SMPS) are power electronic circuits extensively used in a wide range of applications. High frequency switching operation of SMPS causes electromagnetic emissions and has the potential to interfere with system operation, which in turn has an impact on system performance. This makes electromagnetic compatibility (EMC) an important concern. In this paper, a new and simple spread spectrum technique is proposed by modulating chaotic pulse position modulation (CPPM) and pulse width modulation (PWM). The resulting CPWM is implemented to reduce the conducted EMI in SMPS. The proposed method is found to be effective in reducing conduction EMI. The effectiveness and simplicity of the proposed method on spreading those dominating frequencies is compared to the EMI mitigation technique using an external chaotic generator. Finally, the levels of conductive EMI with standard PWM, CPWM with an external chaos generator and the proposed method are experimentally verified to comply with the CISPR 22A regulations. The results confirm the effectiveness of the proposed method.

• Journal of the Korean Society of Industry Convergence
• /
• v.7 no.1
• /
• pp.25-31
• /
• 2004

The heat transfer characteristics of a plasma display panel has been investigated for cooling an electronic module. Hence, a two dimensional $\kappa-{\varepsilon}$ turbulent model was developed to predict the temperatures of the panel and module. The heat conduction was solve for the material region. To consider the mixed convection at the solid-fluid interfaces between the air and the panel and module, the energy equation was solved simultaneously. When the electronic module stands face to face with the panel, the temperatures of panel and module are lower than other arrangement due to the chimney effect. However the gap between the panel and module does not affect significantly the maximum temperature when the aspect ratio is less than 0.1. To maintain the maximum temperature of the module under a certain limit, the passage of air should be well designed by the optimal layout of electronic modules which have different heat emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.442-443
• /
• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.6 no.3
• /
• pp.168-173
• /
• 2013

In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.3
• /
• pp.581-586
• /
• 2015

This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

• Korean Journal of Materials Research
• /
• v.34 no.6
• /
• pp.267-274
• /
• 2024

In this study, four different samples of Se₆₀Ge_40-xBi_x chalcogenides glasses were synthesized by heating the melt for 18 h in vacuum Pyrex ampoules (under a 10^-4 Torre vacuum), each with a different concentration (x = 0, 10, 15, and 20) of high purity starting materials. The results of direct current (DC) electrical conductivity measurements against a 1,000/T plot for all chalcogenide samples revealed two linear areas at medium and high temperatures, each with a different slope and with different activation energies (E₁ and E₂). In other words, these samples contain two electrical conduction mechanisms: a localized conduction at middle temperatures and extended conduction at high temperatures. The results showed the local and extended state parameters changed due to the effective partial substitution of germanium by bismuth. The density of extended states N(E_ext) and localized states N(E_loc) as a function of bismuth concentration was used to gauge this effect. While the density of the localized states decreased from 1.6 × 10¹⁴ to 4.2 × 10¹² (ev^-1 cm^-3) as the bismuth concentration increased from 0 to 15, the density of the extended states generally increased from 3.552 × 10²¹ to 5.86 × 10²¹ (ev^-1 cm^-3), indicating a reduction in the mullet's randomness. This makes these alloys more widely useful in electronic applications due to the decrease in the cost of manufacturing.

• Proceedings of the Korean Fiber Society Conference
• /
• 2003.04a
• /
• pp.36-39
• /
• 2003

Conducting polymers are finding increasing number of applications in various electronic devices such as chemical sensors, electrochromic display, light emitting diodes, etc. Polyaniline(PANI) ranks among highly prospective conduction polymers. PANI was first synthesis in 1862[1] and has been extensively studied as a conducting polymer since the 1980s[2]. The side range of electrical, electrochemical and optical properties coupled with good environmental stability makes PANI potentially attractive for application as an electronic material. (omitted)