• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.318-322
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• 1997

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.17-22
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• 2006

Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.