• E2M - 전기 전자와 첨단 소재
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• 제12권8호
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• Journal of Power Electronics
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• 제15권1호
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• pp.10-17
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• 2015

A quasi-constant on-time controlled buck front end in combined discontinuous conduction mode and boundary conduction mode is proposed to improve power factor (PF).When instantaneous AC input voltage is lower than the output bus voltage per period, the buck converter turns into buck-boost converter with the addition of a level comparator to compare input voltage and output voltage. The gate drive voltage is provided by an additional oscillator during distortion time to eliminate the cross-over distortion of the input current. This high PF comes from the avoidance of the input current distortion, thereby enabling energy to be delivered constantly. This paper presents a series analysis of controlling techniques and efficiency, PF, and total harmonic distortion. A comparison in terms of efficiency and PF between the proposed converter and a previous work is performed. The specifications of the converter include the following: input AC voltage is from 90V to 264V, output DC voltage is 80V, and output power is 94W.This converter can achieve PF of 98.74% and efficiency of 97.21% in 220V AC input voltage process.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• 한국정보통신학회논문지
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• 제20권3호
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• pp.571-576
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• 2016

비대칭 이중게이트 MOSFET는 다른 상하단 게이트 산화막 두께를 갖는다. 상하단 게이트 산화막 두께 비에 대한 문턱전압이하 스윙 및 전도중심의 변화에 대하여 분석하고자한다. 문턱전압이하 스윙은 전도중심에 따라 변화하며 전도중심은 상하단의 산화막 두께에 따라 변화한다. 비대칭 이중게이트 MOSFET는 문턱전압이하 스윙의 저하 등 단채널효과를 감소시키기에 유용한 소자로 알려져 있다. 포아송방정식의 해석학적 해를 이용하여 문턱전압이하 스윙을 유도하였으며 상하단의 산화막 두께 비가 전도중심 및 문턱전압이하 스윙에 미치는 영향을 분석하였다. 문턱전압이하 스윙 및 전도중심은 상하단 게이트 산화막 두께 비에 따라 큰 변화를 나타냈다. 특히 하단 게이트 전압은 문턱전압이하 스윙에 큰 영향을 미치며 하단게이트 전압이 0.7V 일 때 $0<t_{ox2}/t_{ox1}<5$의 범위에서 문턱전압이하 스윙이 약 200 mV/dec 정도 변화하는 것을 알 수 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.244-244
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as transparent electrode. Sensor films were fabricated by air spray method using the multi-walled CNTs solution on glass substrates. The film that was sprayed with the MWCNT dispersion for 60 sec, was 300nm thick. And the electric resistivity and the light transmittance rate are $2{\times}10^2{\Omega}cm$ and 60%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.288-288
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• 2009

Most of Static electricity forms part of our daily experience broadly. Most people have noticed from time to time electric shocks when closing of their car or after walking across a carpet, operating shredder in winter and touching a metal handle. This electrostatic discharge nuisance is normally a minor inconvenience, but in some cases static electricity can cause more serious problems. Static electricity can also be harnessed to good effect in Position Control System.

• E2M - 전기 전자와 첨단 소재
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• 제4권1호
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• pp.12-18
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• 1991

각종 monomer를 공중합시킨 고분자 필름의 X선 유기 TSC(thermally-stimulated current)를 측정하고 polyethylene(PE)의 절연성능 개선의 관점에서 공중합 monomer의 영향에 대하여 검토하였다. PE의 X선 유기 TSC 피이크는 결정화도가 높을 수록 고온측으로 이동하였다. X선 유기 TSC에서 피이크는 공중합에 의하여 Br 및 F원자가 0.2~0.4eV의 전자 trap이 도입된 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.155-158
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• 1998

This paper is calculated at electron swarm simulation by Back Prolongation of Boltzmann equation for range of E/N values from 0.1~200[Td], pressure P= 1.0[Torr], temperature T=300[ 。K], the electron swarm parameter(drift velocity, longitudinal . transverse diffusion coefficients, characteristic energy, etc) in He gas is used by electron collision cross section, particularly explicate the simulation technique, and consider electrical conduction characteristic of He gas.