• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.291-294
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• 2000

The crystallization behavior and dc Conductivities of CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-5}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^2$order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . The linear relationship between in($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes (OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and trois(8-hydroxyquinoline) aluminum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Journal of Power Electronics
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• v.12 no.5
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• pp.689-698
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• 2012

This paper investigates the effects of applying different input current waveshapes on the performance of a continuous-conduction-mode (CCM) power-factor-correction (PFC) boost pre-regulator. It is found that the output voltage ripple of the pre-regulator can be reduced if the input current is modified to include controlled amount of higher order harmonics. This finding allows us to balance the performance of output regulation and the harmonic current emission when coming to the design of the pre-regulator. An experimental PFC boost pre-regulator prototype is constructed to verify the analysis and show the benefit of the pre-regulator operating with input current containing higher order harmonics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.133-136
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• 1992

Electrical resistivity and piezoelectric properties were investigated in Lead Zirconate-Titante(PZT) with Nb$_2$O$\sub$5/dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(K$\sub$p/) were increased with increasing Nb content. The reason for increasing of the electrical resistivity below the Curie Temperature(TC). It is believed that the Curie Temperature(Tc). It is believed that the p-type electrical conduction in PZT is due to lead vacancies. The electromechanical coupling factor(K$\sub$p/) and piezoelectric constant d$\sub$33/ were improved. This behavior can be explained as a compensation effect and Nb$\^$5+/ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized Nb$_2$O$\sub$5/ dopants on the PZT specimens were 0.75 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.552-556
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• 2000

The crystallization behavior and dc Conductivities of CuO-Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-4}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^1$ order. The linear relationship between In($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass system would be due to a small polaron hopping mechanism. The value of activation energy of glass-ceramics heat-treated at 30$0^{\circ}C$ for 12hrs was found to be 0.leV

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.412-413
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• 2006

The electrical conduction mechanism of ITO / Terbium tris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$]/Mg/Al devices has been investigated. The calculation of electric field in single layer organic layer between cathode and anode shows the uniform distribution for the electron injection barrier of over 1.4 eV. The measured current-voltage curve shows well matching with the calculated curve based on the tunneling injection of electron under the uniform distribution of electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.955-959
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• 2004

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.