• 제목/요약/키워드: Electronic circuit

검색결과 3,010건 처리시간 0.03초

Study on the characteristics of vias regarding forming method (다층유기물 기판 내에서의 Via 형성방법에 따른 전기적 특성 연구)

  • Youn, Je-Hyun;Yoo, Chan-Sei;Park, Se-Hoon;Lee, Woo-Sung;Kim, Jun-Chul;Kang, Nam-Kee;Yook, Jong-Gwan;Park, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.209-209
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    • 2007
  • Passive Device는 RF Circuit을 제작할 때 많은 면적을 차지하고 있으며 이를 감소시키기 위해 여러 연구가 진행되고 있다. 최근 SoP-L 공정을 이용한 많은 연구가 진행되고 있는데 PCB 제작에 이용되는 일반적인 재료와 공정을 그대로 이용함으로써 개발 비용과 시간 면에서 많은 장점을 가지기 때문이다. SoP-L의 또 하나 장점은 다층구조를 만들기가 용이하다는 점이다. 각 층 간에는 Via를 사용하여 연결하게 되는데, RF Circuit은 회로의 구조와 물성에 따라 특성이 결정되며, 그만큼 Via를 썼을 때 그 영향을 생각해야 한다. 본 연구에서는 multi-layer LCP substrate에 다수의 Via를 chain 구조로 형성하여 전기적 특성을 확인하였다. Via가 70um 두께의 substrate를 관통하면서 상층과 하층의 Conductor을 연속적으로 연결하게 된다. 이 구조의 Resistance와 Insertion Loss를 측정하여, Via의 크기 별 수율과 평균적인 Resistance, RF 계측기로 재현성을 확인하였다. 이를 바탕으로 공정에서의 안정성을 확보하고 Via의 크기와 도금방법에 의한 RF Circuit에서의 영향을 파악하여, 앞으로의 RF Device 개발에 도움이 될 것으로 기대한다. 특히 유기물을 이용한 다층구조의 고주파 RF Circuit에 Via를 적용할 때의 영향을 설계에서부터 고려할 수 있는 자료가 될 것이다.

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A Novel Circuit for Characteristics Measurement of SiC Transistors

  • Cao, Guoen;Kim, Hee-Jun
    • Journal of Electrical Engineering and Technology
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    • 제9권4호
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    • pp.1332-1342
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    • 2014
  • This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A soft-switching circuit based on synchronous buck topology is developed in this paper. To provide high-voltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

Development of body-fat measurable electronic scale. (체지방측정이 가능한 전자식 체중계의 개발)

  • Choi, Byung-Sang;Kim, Il-Hwan;Park, Chan-Won
    • Journal of Industrial Technology
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    • 제26권B호
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    • pp.243-248
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    • 2006
  • The purpose of this study is to design a body-fat measurable electronic scale which can measure body impedance and weight. The hardware configuration of this system for the body-fat measurement includes a sinewave constant current generator, a analog switch circuit and a microprocessor with peripheral interface as well as electronic scale circuit. And the dedicated software is also designed for calculating body fat and body composition analysis from the result of the measurement.

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Noise of Electronic Equipments Reduction Technology in Rolling Stock (철도차량용 전자장비의 잡음처리 기법)

  • Choi Kweon-hee;Lee Byung-seok;Kim Kuk-jin
    • Proceedings of the KSR Conference
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    • 한국철도학회 2003년도 추계학술대회 논문집(III)
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    • pp.628-633
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    • 2003
  • Recently, the electronic circuit with microprocessor based control system instead of conventional analog circuit is widely used for rolling stock, and also these circuits are widely adopted for train control and monitoring in modem rapid transit system. Noise, distortion and attenuation are always present in electronic equipments and strictly limit performance. The purpose of this paper is to propose noise reduction technology for electronic equipments in rolling stock.

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A Study on SFCL with IGBT Based DC Circuit Breaker in Electric Power Grid

  • Bae, SunHo;Kim, Hongrae;Park, Jung-Wook;Lee, Soo Hyoung
    • Journal of Electrical Engineering and Technology
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    • 제12권5호
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    • pp.1805-1811
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    • 2017
  • Recently, DC systems are considered as efficient electric power systems for renewable energy based clean power generators. This discloses several critical issues that are required to be considered before the installation of the DC systems. First of all, voltage/current switching stress, which is aggravated by large fault current, might damage DC circuit breakers. This problem can be simply solved by applying a superconducting fault current limiter (SFCL) as proposed in this study. It allows a simple use of insulated-gate bipolar transistors (IGBTs) as a DC circuit breaker. To evaluate the proposed resistive type SFCL application to the DC circuit breaker, a DC distribution system is composed of the practical line impedances from the real distribution system in Do-gok area, Korea. Also, to reflect the distributed generation (DG) effects, several DC-to-DC converters are applied. The locations and sizes of the DGs are optimally selected according to the results of previous studies on DG optimization. The performance of the resistive type SFCL applied DC circuit breaker is verified by a time-domain simulation based case study using the power systems computer aided design/electromagnetic transients including DC (PSCAD/ EMTDC(R)).

Study on Size-Reduced λ/4 Impedance Transformer using T-Equivalent Circuit (T형 등가회로를 이용하여 크기를 감소시킨 λ/4 임피던스 변환기의 연구)

  • Tae-Soon Yun
    • The Journal of the Korea institute of electronic communication sciences
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    • 제18권4호
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    • pp.595-600
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    • 2023
  • In this paper, a modified equations of the T-equivalent circuit of the transmission line with the arbitrary electrical length is suggested. The suggested equations can be calculated without limitation of the equal branch-line. So, a modified T-equivalent circuit can be made with the arbitrary position of the open-stub. Also, the modified T-equivalent circuit can be applied in the arbitrary electrical length and impedance of the transmission line. For example, the λ/4 impedance transformer is converted with 4 divided T-equivalent circuit. The converted λ/4 impedance transformer has the size reduction ratio of 39.4%.

Distributed RC Sinusoidal Oscillator Control Frequency by One Pole Amplifier

  • Pirajnanchai, Virote;Songthanapitak, Numyoot;Janchitrapongvej, Kanok
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2004년도 ICCAS
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    • pp.570-573
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    • 2004
  • This paper present a distributed RC lines (URCs) oscillator with sinusoidal output. The frequency of oscillator can be controlled and adjustable by varying an one pole amplifier. The circuit incorporated an gain controller loop for amplitude stabilization with low distortion. The realization of simulation and experimental results are in reasonably good agreement with the theoretical , and very low harmonic distortion. In this circuit can be suitable for LSI process fabrication and the circuit application in electronic communications system.

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An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

  • Ghosh, Pujarini;Haldar, Subhasis;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.377-387
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    • 2012
  • An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

SiC MOSFET Compared to Si Power Devices during Short Circuit Test (실리콘 카바이드와 실리콘 MOSFET의 단락회로 특성비교)

  • Nguyen, Thanh That;Ashraf, Ahmed;Park, Joung Hu
    • Proceedings of the KIPE Conference
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    • 전력전자학회 2013년도 추계학술대회 논문집
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    • pp.89-90
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    • 2013
  • Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

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Balanced Buck-Boost Switching Converter to Reduce Common-Mode Conducted Noise

  • Shoyama Masahito;Ohba Masashi;Ninomiya Tamotsu
    • Proceedings of the KIPE Conference
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.212-216
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    • 2001
  • Because conventional switching converters have been usually using unbalanced circuit topologies, parasitic capacitance between the drain/collector of an active switch and the frame ground through its heat sink may generate the common-mode conducted noise. We have proposed a balanced switching converter circuit, which is an effective way to reduce the common-mode conducted noise. As an example, a boost converter version of the balanced switching converter was presented and the mechanism of the common-mode noise reduction was explained using equivalent circuits. This paper extends the concept of the balanced switching converter circuit and presents a buck-boost converter version of the balanced switching converter. The feature of common-mode noise reduction is confirmed by experimental results and the mechanism of the common-mode noise reduction is explained using equivalent circuits.

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