• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1049-1056
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• 2017

In this paper, a microstrip-fed dual-band monopole antenna with two arc-shaped lines for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two arc-shaped lines and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters L2, L5, and with/without slit to get the optimized parameters. The proposed antenna is made of $13.0{\times}34.0{\times}1.0 mm^3$ and is fabricated on the permittivity 4.4 FR-4 substrate($12.0{\times}34.0{\times}1.0mm^3$). The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 360 MHz (2.29~2.65 GHz) and 1,245 MHz (4.705~5.95 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4 GHz band/5.0 GHz band), respectively.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.23-29
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• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.117-123
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• 2015

Cholesteric liquid crystals are one dimensional photonic band-gap materials due to their birefringence and periodic structure. Dye doped cholesteric liquid crystals are self-assembling, mirror-less, low threshold laser structures that exhibit distributed feedback. In this review paper, we have presented the development in the field of lasing characteristics of dye doped cholesteric liquid crystals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.155-155
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• 2015

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.306-313
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• 2012

In order to enhance the isolation level between two dual-band E-slot microstrip patch antennas, EBG structure which operates in UMTS Tx(1.92~1.98 GHz) and Rx(2.11~2.17 GHz) band is proposed. The proposed EBG structure made with a periodic array of two different size EBG unit cells which has a modified mushroom-type for isolation improvement between two antennas. They do not share a common ground plane of the microstrip patch antenna. Overall size of the fabricated antenna is $210.5mm{\times}117mm$. The two different EBG unit cell sizes are $15.6mm{\times}4mm$ and $17.4mm{\times}4mm$, respectively. It was etched on the FR-4 substrate(thickness=3.93 mm, ${\varepsilon}_r$=4.6). The experiment results show that the isolation level between antennas in Tx/Rx band were improved by about 9 dB and 12 dB, respectively, through the use of the proposed EBG structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.