• 한국전자파학회논문지
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• 제17권3호
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• pp.249-258
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• 2006

본 논문에서는 새로운 구조의 헬리컬 안테나를 UHF 대역 RFID 리더용 안테나로 제안하였다. 제안된 헬리컬 안테나는 안테나의 선로가 다각 구조의 외부단에서 내부단으로 감겨 들어가는 형태를 가져 복사 이득과 복사 패턴의 조절이 용이하고, 감긴 선로의 수평 회전각과 수직 회전각을 조절하여 양질의 원형 편파를 복사할 수 있다. 세부적인 안테나 설계 변수는 Pareto 유전자 알고리즘을 사용하여 RFID 리더 특성에 적합하도록 최적화 시켰다. 최적화된 RFID 리더 안테나들 중 2단 구조의 표본 안테나를 선별하여 유연한 유전체인 종이 위에 스트립 선로로 제작하였으며, 제작된 안테나의 측정간을 시뮬레이션 결과와 비교, 분석하였다. 제작된 안테나는 kr=3.2의 크기를 가지며 21.4 %의 반사 손실 대역폭, 31.9 %의 원형 편파 대역폭, 약 $5.5m^2$의 인식 영역 특성을 보였다. 안테나 선로의 전류 분포와 선로 구조의 민감도를 조사한 결과, 급전 부위 근처에서 선로가 $0.25{\lambda}$ 정합기로 동작하게 되어 광대역의 정합 특성을 가지며, 꺾이는 스트립 선로 구조는 최적의 진행파를 형성하여 양질의 원형 편파를 발생시키는 것을 확인하였다.

• 한국전자통신학회논문지
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• 제18권2호
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• pp.251-258
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• 2023

본 논문에서는 특화망에 적용 가능한 DLP(Dual Linear Polarization) 적층 안테나를 제안하였다. 제안된 안테나는 일반적인 적층구조를 갖고 최대이득을 얻을 수 있도록 공기 갭을 갖도록 설계하였다. 격리도를 개선하기 위해서 두 개의 급전포트를 각 층으로 분리하여 설계하였다. 각각 패치의 크기는 하위층, 17.80 mm×16.70 mm(W1×L1) 그리고 상위층 18.56 mm×18.73 mm(W2×L2)이며 적층 안테나의 전체 크기는 40.0 mm(W)×40.0 mm(L)이며, 모두 두께(h) 1.6 mm, 그리고 비유전율이 4.4인 FR-4 기판을 사용하였다. 제작 및 측정결과로부터, -10 dB 반사손실을 기준으로 입력포트 1에서 100.0 MHz (4.74~4.84 GHz), 입력포트 2에서 150.0 MHz (4.67~4.82 GHz)의 대역폭을 얻었으며 전달계수 S21은 -20 dB 이하의 값을 얻었다. 또한 각 급전포트에서의 편파분리도를 얻었다.

• 대한화학회지
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• 제23권5호
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• pp.314-319
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• 1979

바닥 말무리 dinoflagellate의 광합성 에너지 수용 색소인 peridinin의 전자 흡수스펙트럼을 PPP SCF MO 계산결과와 형광 편광 실험결과에 견주어 분석하였다. 청색광 부위의 흡수띠 (470 nm)는 $B{\leftarrow}A$ 천이에 대응하여 분자의 장축과 거의 평행 방향으로 편광되어 있음이 예측된다. 소위 "cis peak" 영역의 근자외선 흡수띠는 두개의 비교적 약한 ${\pi}{\rightarrow}{\pi}^*$천이 $(C{\leftarrow}A$와 $D{\leftarrow}A)$에 기인하며 그 편광축은 $^1B{\leftarrow}A$편광축 방향과 근접되어 있음이 MO 계산과 편광 측정에 의해 추정되었다. 그리고 락톤 카르보닐 원자단의 전자구조는 $^1B$ 상태에서도$^1A$ 상태 (ground state)에 비해서 과히 변화함이 없으나, allene기는 charge transfer적 성격을 농후하게 띠고 있어서 들뜬상태에서는 allene기가 전자결핍상태가 되는 것이 예측된다.

• 한국정보통신학회논문지
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• 제20권4호
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• pp.819-825
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• 2016

본 논문에서는 기존의 위상 고정 루프를 병렬 형태로 이중 루프를 구성하였다. 두 개의 루프를 통해서 전달 특성에 따라 원하는 크기의 대역폭을 만든다. 대역 폭의 형태는 동작하는 주파수 대역에서 잡음을 최소화 할 수 있는 위상 고정 루프를 설계하였다. 제안한 위상고정루프는 두 가지 필터를 제어하기 위하여 두 개의 기울기 값을 가지는 전압제어 발진기를 사용하였다. 또한 정확한 위상 고정을 위하여 위상 고정 상태 표시기를 사용하였다. 전체적인 위상 고정 루프가 안정적인 동작하기 위하여 각 각의 루프가 각각 $58.2^{\circ}$, $49.4^{\circ}$의 위상 여유를 가지고 있으며 두 개의 루프를 합쳤을 때에도 $45^{\circ}$이상의 안정적인 위상 여유를 가지는 것을 확인 할 수 있다. 제안된 위상 고정 루프는 1.8V 0.18um CMOS 공정을 이용하여 설계 되었다. 시뮬레이션 결과는 이중 루프를 가지고 위상고정루프의 구조가 원하는 출력 주파수를 생성하며 안정적으로 동작하는 것을 보여 주었다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.210-213
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• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.206-211
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• 2010

Piezoelectric energy harvesting uses piezoelectric, which is able to convert unused mechanical vibration energy to electrical energy, such as with motor and machinery. The piezoelectric energy harvester was constructed with a cantilever made of lead zirconate titanate with a metal plate. The primary material was soft lead zirconium titanate (PZT-5H) due to the large strain availability, acceptable mechanical strength and high piezoelectric constant. This technique's drawback is that the energy efficiency is lower than the other energy harvesting methods, but this study increases the output electric power efficiency by analyzing a finite element method for the structure of the piezoelectric energy harvester. We manufactured two cantilever types as follows: the L-60 and L-33 bimorph piezoelectric energy harvesters. Their resulting energy harvesters were able to obtain high voltage values as follows: 27.4 mV and 40.6 mV. Moreover, these results have a similar band of resonance frequency it comparison to the simulation. Consequently, this study was confirmed with validity. The output electric powers of the L-60 and L-33 types have 3.1 mW/s and 5.8 mW/s with 47 Hz and 148 Hz of resonance frequency and then, the load resistivities were $100k\Omega$ and $10k\Omega$, respectively.