• The Journal of the Korea institute of electronic communication sciences
• /
• v.8 no.8
• /
• pp.1257-1264
• /
• 2013

The study is about the national defense 2020 plan. According to the reduction of military bases, It should be needed to be integrated as a high-tech camp. So we researched and did a fact-finding survey mainly in Gyeonggi Province. After the research, first, It should be reset the regional development planning and the retention criteria of harmonized camp. Second, the neglected and scrapped camps should be put into order to activate the local economy by handling procedure. Third, it should have dedicated consultative bodies, exclusive departments and professional staff to communicate with the military authorities and the citizens. Fourth, if there are any causes of civil appeals such as shooting ranges should be in the underground. Lastly, To get support smoothly, it should be reflected by enacted special laws and ordinance regulations. This material could be used when the Ministry of National Defense has a discussion with Gyeonggi Province.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.207-207
• /
• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.