• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.758-767
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• 2007

Today, medical devices is making great progress in type of the electronic medical device controlled by embedded software. So, the quality of electronic medical devices is dependant on the quality of embedded medical software. Especially, considering that medical devices closely connected to human life, we think the study about reliability of medical devices will be needed in the quality of programmable electronic medical devices. In this thesis, we constructed the reliability evaluation method based on ISO/IEC 9126 and ISO/IEC 12119, and developed the system that can applicate FMEA method, the one of the reliability evaluation method.

• Journal of the Korean Society for Precision Engineering
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• v.4 no.3
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• pp.52-59
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• 1987

The flatness of a precision surface plate is generally measured by using precision angular measuring instruments such as laser interferometers, autocollimators and electronic levels. Since these instruments are expensive and measurement procedures are complex, such methods are not widely used in industries. In this study, an electronic micrometer that is easy to use and inexpensive to produce was developed in order to solve this problem. The flatness of a black granite surface plate, measured using this device was compared with the values obtained by using the conventional three methods. The results were consistent within ${\pm}1{\mu}m$. It proves that the flatness measuring method using electronic micrometers can be utilized for quantitative measurement. An accessory device that can improve the precision of measurement by attaching to the electronic micrometer was also designed and fabricated.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.115-119
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• 2011

Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

• Journal of Applied Reliability
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• v.16 no.3
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• pp.202-207
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• 2016

Purpose: The purpose of this study is main factors (environmental conditions, pattern spacing, pattern material) that effect the ion-migration of PCB. Methods: Recently, the electronic components are becoming more high density of electronic device, so that electronic circuits have smaller pitches between the patten and more vulnerable to insulation failure. so the reliability of electric insulation of device has become an ever important issue as device contact pitches of pattern. Usually, ion-migration occurs in high temperature and high humidity environment as voltage is applied to the circuit. Under high temperature and high humidity, voltage applied electronic components respond to applied voltages by metals's electrochemical ionization and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. Results: we studied ion-migration that occurs in accordance with the main factors (environmental conditions, pitches, pattern material). The PCB pattern material was made by two different types of material (free solder, OSP) for this research and pitches of pattern is 0.15mm, 0.3mm, 0.5mm. PCB was experimented in the environmental conditions (high temperature $120^{\circ}C$, high temperature and high humidity $85^{\circ}C$, 85%RH) and was analyzed for ion-migration through the experiment results. Conclusion: We confirmed that environmental condition, pitches of pattern, pattern material had effect on ion-migration of PCB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.737-739
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• 2010

In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. The oxide thickness and channel thickness in DG MOSFET determines threshold voltage and extensively influences on Ss(Subthreshold swing). We have investigated the threshold voltage and Ss(Subthreshold swing) characteristics according to variation of channel thickness from 1nm to 3nm in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.692-701
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• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1800-1802
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/phosphor/Insulator/silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was $BaTiO_3$ and $Y_2O_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Towers circuit was measured.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.87-89
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• 2001

The structure of manufactured device is Cr-Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from -2[V] to +2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.