• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.110-114
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• 2020

In this paper, a heat pump using a Peltier device was developed for heat dissipation in a sealed electric box. The heat pump was designed with a cooling fin attached to both sides of the Peltier device, and a fan was mounted on the cooling fin on the hot side to increase the efficiency. The heat dissipation efficiency could be improved by directly connecting the electronic component having high heat to the cooling fin using a heat conducting wire. The fabricated heat pump was designed to operate only in the temperature range set by the temperature control system to improve the problem of high power consumption of the Peltier element.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.491-494
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• 1999

We have examined the electrical properties of arachidic acid Langmuir (L) films by using a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and detect the Induced displacement current. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are 17, 19 and 21. Also, we then examined of the MIM device by means of I-V The I-V characteristic of the device is measured from 0 to +1[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.7
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• pp.995-1002
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• 2013

In this paper, an effort has been made to design a Real-time Ship Management System where the status of a ship and its surrounding are constantly monitored and recorded at the base station. Proprietary system message based on overhead and checksum encapsulation has been designed to facilitate the communication. Software encoder and decoder are developed independently for each communication device attached to the system to process the proprietary system message into format by device standard. In addition, few configurations are designed to determine the method of updating the ship status message to the base station, which could be remotely chosen by the administrator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly [2-(2'-ethylhexyloxy)-5-methoxy-1, 4-phenylenevinylene])/Al(aluminium) and ITO/MEH-PPV/Alq$_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that alum on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness 200 $\AA$ of Alq$_3$ is shown electrical properties that turn on voltage is about 11V, and current density decreases as a function of increasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.528-531
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• 2000

ZnS:Cu phosphor used on powder electroluminescent device has a green emission in low frequency and a blue emission in high frequency. In this paper, to obtain the powder electroluminescent device of the blue emission in low frequency, the emission properties with mixed the ratio between phosphor and dye was investigated. The mixed ratio of the dye was from 0 to 5 weight percent. To inquire into the blue emission, the emission spectrum, the CIE coordinate system and the brightness were measured.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.44-50
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• 1996

In this study, Selenium device was fabricated by vacuum evaporation method with the substrate temperature at room temperature and its electrical and optical properties were investigated to be used in optical device. The film properties largely depended on the transmittance and annealing time, and improved with aging owing to stress release. We found that the photocurrent of the films increase linearly with light illumination. As a result, Selenium device made by this method yielded a short circuit current density of 10.5mA/$\textrm{cm}^2$, an open circuit voltage of 39OmV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.366-369
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• 2001

In this study, the matrix Organic Electroluminescence (OEL) device, that was consisted of R,G,B pixels. We fabricated OEL devices by side by side methode and, used organic material Alq3 as green, DCM as red and Butyl PBD as blue ETL. We investigated the characteristic of brightness and current density for matrix OEL device. As the results, each color devices has minimum about 100 cd/㎡ brightness and maximum luminescence was 2500cd/㎡ in green OEL device

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.633-640
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• 2004

We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.