• Advances in nano research
• /
• 제1권3호
• /
• pp.171-182
• /
• 2013

The alternating current (AC) conductivity in semiconductor crystals with an open-core screw dislocation is studied in the current work. The screw dislocation in crystalline media results in an effective potential field which affects the electronic transport properties of the system. Therefore, from a technological view point, it is interesting to investigate properties of AC conductivity at frequencies of a few terahertz. To quantify the screw-induced potential effect, we calculated the AC conductivity of dislocated crystals using the Kubo formula. The conductivity showed peaks within the terahertz frequency region, where the amplitude of the AC conductivity was large enough to be measured in experiments. The measurable conductivity peaks did not arise in dislocation-free crystals threaded by a magnetic flux tube. These results imply different conductivity mechanisms in crystals with a screw dislocation than those threaded by a magnetic flux tube, despite the apparent similarity in their electronic eigenstates.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.211.2-211.2
• /
• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Transactions on Electrical and Electronic Materials
• /
• 제5권4호
• /
• pp.129-132
• /
• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.234-237
• /
• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.909-912
• /
• 2001

Lanthanide orthochromite materials have been widely studied as refractory conducting ceramics because of their electrical conductivity, oxidation resistance and high melting points. In this paper theoretical and experimental analysis about electric conductivity of the SHS prepared ceramics was carried out. The usefulness of the Seebeck-coefficient measurements as a function of P(O$_2$) is emphasized. Electronic conduction was found to be n-type in the lower P(O$_2$) range, and p-type in the higher P(O$_2$) range. The carrier concentrations were calculated as a function of P(O$_2$) and defect structure.

• 한국전자파학회논문지
• /
• 제19권5호
• /
• pp.580-586
• /
• 2008

위성 항법 보정 시스템(DGPS)을 설치하거나 운영하기 위해서는 시스템 커버리지에 대한 예측이 필요하다. 그러나 기존에 제안된 ITU-R 유효 대지 도전율을 이용하여 커버리지를 분석할 경우, 실제 측정된 결과와 오차가 많이 발생하기 때문에, 본 연구에서는 수정된 유효 대지 도전율 값을 이용하여 DGPS의 기준국 커버리지를 분석하였다. 수정된 유효 대지 도전율은 ITU-R 유효 대지 도전율을 기본으로 하였으며, 예측된 전계 강도와 측정된 전계 강도간의 오차를 최소화하기 위해 통계저인 방법을 이용하여 수정되었다. 다음으로 중파 대역 감쇠 모델과 수정된 유효 대지 도전율을 이용하여 현재 운용중인 DGPS의 서비스 영역을 예측하였으며, 다양한 분석을 통해 시스템의 안정성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.112-115
• /
• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

• Transactions on Electrical and Electronic Materials
• /
• 제16권6호
• /
• pp.351-354
• /
• 2015

In this study, alumina plates 9~25 μm in size were used as thermal fillers, and epoxy resin was used as a polymer matrix. Oriented alumina plate/epoxy composites were prepared using a rolling method. The effect of ordering alumina plates increased with alumina plate size. The thermal conductivity and flexural strength of the composites were investigated. The horizontal thermal conductivity of the oriented composite was significantly higher than the vertical thermal conductivity. The horizontal thermal conductivity of the 75 wt% alumina content was 8.78 W/mk, although the vertical thermal conductivity was 1.04 W/mk. Ordering of the alumina plate using a rolling method significantly improved the thermal conductivity in the horizontal direction. The flexural strengths of the ordered alumina/epoxy composites prepared at different curing temperatures were measured.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.211-214
• /
• 2001

The undesirable phase transformation of zirconium dioxide at high temperatures can be eliminated by stabilization of the cubic phase with an addition of a selected alkaline earth or rare-earth oxide. In this paper the ionic conductivity of cubic solid solutions in the stabilized ZrO$_2$ by CaO-Y$_2$O$_3$ system was examined. The higher ionic conductivity appears to be related to lower activation energy rather than to the number of oxygen vacancies dictated by composition. Those compositions of highest conductivity lie close to the cubic-monoclinic solid-solution phase boundary. Conductivity temperature data are presented that indicate a reversible order-disorder transition for Zr$_2$2-Y$_2$O$_3$cubic solid solutions containing 20 and 25 mole % $Y_2$O$_3$.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권4호
• /
• pp.487-494
• /
• 1995

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. We investigated the effects of lithium salts, plasticizer addition, temperature dependence of conductivity and electrochemical stability window of polyethylene oxide(PEO) electrolytes. PEO electrolyte completed with LiCIO$\_$4/ shows the better conductivity than the others. PEO-LiCIO$\_$4/ electrolyte, when EO/Li$\^$+/ ratio is 8, showed adequate conductivity around room temperature. By adding propylene carbonate and ethylene carbonate to PEO-LiCIO$\_$4/ electrolyte, its conductivity was higher than that of PEO-LiCIO$\_$4/ without those. Also PEO$\_$8/LiCIO$\_$4/ electrolyte remains stable up to 4.5V vs. Li/Li.