• Advances in nano research
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• v.1 no.3
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• pp.171-182
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• 2013

The alternating current (AC) conductivity in semiconductor crystals with an open-core screw dislocation is studied in the current work. The screw dislocation in crystalline media results in an effective potential field which affects the electronic transport properties of the system. Therefore, from a technological view point, it is interesting to investigate properties of AC conductivity at frequencies of a few terahertz. To quantify the screw-induced potential effect, we calculated the AC conductivity of dislocated crystals using the Kubo formula. The conductivity showed peaks within the terahertz frequency region, where the amplitude of the AC conductivity was large enough to be measured in experiments. The measurable conductivity peaks did not arise in dislocation-free crystals threaded by a magnetic flux tube. These results imply different conductivity mechanisms in crystals with a screw dislocation than those threaded by a magnetic flux tube, despite the apparent similarity in their electronic eigenstates.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.234-237
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• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.909-912
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• 2001

Lanthanide orthochromite materials have been widely studied as refractory conducting ceramics because of their electrical conductivity, oxidation resistance and high melting points. In this paper theoretical and experimental analysis about electric conductivity of the SHS prepared ceramics was carried out. The usefulness of the Seebeck-coefficient measurements as a function of P(O$_2$) is emphasized. Electronic conduction was found to be n-type in the lower P(O$_2$) range, and p-type in the higher P(O$_2$) range. The carrier concentrations were calculated as a function of P(O$_2$) and defect structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.580-586
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• 2008

The prediction of a system coverage is required to install or operate a base station of the differential global positioning system(DGPS). However, the predicted results differ from the measured results when those are analyzed using ITU-R effective ground conductivity values. Thus, in this paper, the coverages of DGPS reference stations are analyzed using the modified effective ground conductivity values. The modified effective ground conductivity is based on the effective ground conductivity of ITU-R and modified to minimize the error between the measured electric fields and the predicted electric fields by using a statistical method. Then, the DGPS system coverages are analyzed by using the modified effective ground conductivity values, and the system stability is verified with a various analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.112-115
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.351-354
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• 2015

In this study, alumina plates 9~25 μm in size were used as thermal fillers, and epoxy resin was used as a polymer matrix. Oriented alumina plate/epoxy composites were prepared using a rolling method. The effect of ordering alumina plates increased with alumina plate size. The thermal conductivity and flexural strength of the composites were investigated. The horizontal thermal conductivity of the oriented composite was significantly higher than the vertical thermal conductivity. The horizontal thermal conductivity of the 75 wt% alumina content was 8.78 W/mk, although the vertical thermal conductivity was 1.04 W/mk. Ordering of the alumina plate using a rolling method significantly improved the thermal conductivity in the horizontal direction. The flexural strengths of the ordered alumina/epoxy composites prepared at different curing temperatures were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.211-214
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• 2001

The undesirable phase transformation of zirconium dioxide at high temperatures can be eliminated by stabilization of the cubic phase with an addition of a selected alkaline earth or rare-earth oxide. In this paper the ionic conductivity of cubic solid solutions in the stabilized ZrO$_2$ by CaO-Y$_2$O$_3$ system was examined. The higher ionic conductivity appears to be related to lower activation energy rather than to the number of oxygen vacancies dictated by composition. Those compositions of highest conductivity lie close to the cubic-monoclinic solid-solution phase boundary. Conductivity temperature data are presented that indicate a reversible order-disorder transition for Zr$_2$2-Y$_2$O$_3$cubic solid solutions containing 20 and 25 mole % $Y_2$O$_3$.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.487-494
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• 1995

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. We investigated the effects of lithium salts, plasticizer addition, temperature dependence of conductivity and electrochemical stability window of polyethylene oxide(PEO) electrolytes. PEO electrolyte completed with LiCIO$\_$4/ shows the better conductivity than the others. PEO-LiCIO$\_$4/ electrolyte, when EO/Li$\^$+/ ratio is 8, showed adequate conductivity around room temperature. By adding propylene carbonate and ethylene carbonate to PEO-LiCIO$\_$4/ electrolyte, its conductivity was higher than that of PEO-LiCIO$\_$4/ without those. Also PEO$\_$8/LiCIO$\_$4/ electrolyte remains stable up to 4.5V vs. Li/Li.