• Title/Summary/Keyword: Electron-beam evaporation

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Electrical and Optical Properties of Electrochromic Window with Both Lithium and Proton Conducting Polymer Electrolytic Media (리튬 및 프로톤 전도성 고분자전해질을 사용하여 제작한 Electrochromic 창의 전기 및 광학적 특성)

  • 박성용;이철환;김형선;조원일;조병원;윤경석;안춘호;우경근
    • Journal of the Korean institute of surface engineering
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    • v.28 no.1
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    • pp.46-54
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    • 1995
  • An electrochromic(EC) cell was constructed using $WO_3$ as a electrochromic material and NiO as a counter electrode, deposited onto ITO-coated glass by the implementation of electron beam evaporation. The electrolytic media were both lithium and proton conducting polymers such as poly-acrylonitrile(PAN)-$LiClO_4$, poly-ethylene oxide(PEO)-$LiClO_4$, poly-vinyl butyral(PVB)-LiCl and PVB-H$_3$$PO_4$. Potentiodynamic cycling of the cells using PAN-$LiClO_4$, or PVB-$H_3$$PO_4$ electrolyte yielded a transmission variation of more than 40% at the wavelength of 632.8 nm within less than 10 sec response time at room temperature. These results indicate that these electrolytes, transparent in gel type, are premising for the application in large area electrochromic windows.

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Corrosion resistance of double Al-Mg coating films on steel sheet prepared by PVD method (PVD법에 의해 제작된 Al-Mg 이층 코팅막의 내식특성)

  • Im, Gyeong-Min;Lee, Seul-Gi;Jeong, Jae-In;Yang, Ji-Hun;Lee, Myeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.150-150
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    • 2013
  • Al-Mg films were prepared onto steel sheet according to deposition condition by eco-friendly electron beam vacuum evaporation method. The influence of Al-Mg films on corrosion resistance was evaluated by salt spray test and electrochemical method etc.. From the experimented results, it was found that the Al-Mg films which showed good corrosion resistance tend to have fine structure with homogenious composition distribution. In addition, it was shown that the property of coating films can be improve by controlling thickness ratio and uniform distribution of intermetallic compounds in Al-Mg films.

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The electrochromic properties of nickel oxide films (니켈산화물 박막의 전기적착색특성)

  • 이길동
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.127-135
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    • 1999
  • Nickel oxide films were prepard by using the electron beam evaporation technique. Coloring and bleaching experiments for cyclic durability were repeated in KOH electrolyte by cyclic voltammetry. Visible spectrophtometry was used to assess the stability of the transmittance in the degraded films. X-ray photoelectron spectroscopy results showed that the grain surface are oxygen-rich compared to the grain interiors in a NiO film. Open circuit memory of colored films is about 400hours in lN KOH. The rate of self discharge was evaluated by measuring the transmittance at 550nm of a fully oxidized NiO film. The rate of self discharge was increased polynomially with time and the film is nearly bleached after about 400hours. It was also found that the degraded film by repeated cycles in the KOH solution changed the grain shape of film surface The film prepared under a vacuum pressure of $3\times10^{-4}$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in KOH electrolyte. Band theory applied to explain the electrochromic mechanism was discussed.

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A Study on the Silicidation of Thick Co/Ti Bilayer (두꺼운 이중층 Co/Ti 막의 실리사이드화에 관한 연구)

  • 이병욱;권영재;이종무;김영욱
    • Journal of the Korean Ceramic Society
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    • v.33 no.9
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    • pp.1012-1018
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    • 1996
  • To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

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100Gbps Ti: LiNbO$_3$ Optical Intensity Modulator (100Gbps Ti:LiNbO$_3$ 광강도 변조기)

  • 김성구;이한영;윤형도;임상규;구경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.282-285
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    • 1999
  • Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$. Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$.

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Characteristics of CaS:Eu,S electroluminescent devices (CaS:Eu,S 전계발광소자의 특성)

  • 조제철;유용택
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.752-758
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    • 1995
  • Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

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MAGNETIC AND MAGNETO-OPTICAL PROPERTIES OF Co-BASED MULTILAYERED FILMS PREPARED BY ELECTRON-BEAM EVAPORATION

  • Lee, Y.P.;Lee, B.J.;Park, H.K.;Kim, S.K.;Kang, J.S.;Jeong, J.I.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.24-29
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    • 1995
  • The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.

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The structure and the surface composition of semiconductor CdZnTe films by EBE (EBE로 증착된 반도체 CdZnTe 박막의 결정구조와 표면조성)

  • 박국상;김선옥;이기암
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.1
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    • pp.25-36
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    • 1995
  • We have investigated the structure and the conductivity of the $Cd_{1-y}Zn_{y}$ Te films evaporated on the glass substrates (Corning 7059) by Electron Beam Evaporator (EBE) in pressure of approximately $1 {\times} 10^{-6}$ torr.The structure temperatures were held at both room temperature and $300^{\circ}C$, and the samples have annealed for an hour at $300^{\circ}C$ The survace com-position of the as-prepared films were slightly different from those of CdZn Te source material.Cd losses on the CdZnTe surface was measured about 4% of atomic ratio at room temperature substrate, whereas Zn atomic ratio was nearly constant, relatively. The strure is observed to be polycrystalline whose phase is mainly cubic phase. Thermal expansion coefficient was $6.30 {\times} 10^{-5}/^{\circ}C$ which was calculated from the variation of lattice parameter by X-ray powder pat-terns measured at $400^{\circ}C$.Diffraction peaks were slightly increased by annealing for an hour at $300^{\circ}C $, but they werey highly affected by substrate temperature during evaporation.

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The influence of preparation conditions on the electrochemical degradation of tungsten oxide thin films prepared by electron beam deposition (제작조건이 전자비임으로 제작된 텅스텐산화물 박막의 전기화학적 퇴화에 미치는 영향)

  • 이길동
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.306-313
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    • 1998
  • The electrochromic $WO_3$thin films were prepared by using the electron-beam evaporatin technique. Flms prepared at a vacuum pressure of $10^{-4}$ mbar were found to be most stable during repeated potential cycles. The chemical stability of the film in aqueous solutions was also affected by the vacuum pressure during evaporation. The redox current and the optical properties of the degraded films were affected by the thickness of the film. The 5,000$\AA$-thick films were found to be most stable, undergoing the least degradation during the repeated coloring and bleaching cycles. The origin of the mechanism dominating the degradation during the repeated coloring and bleaching cycles was the accumulation of lithium in the film, which results in decreasing redox current. Tungsten oxide films with titanium content of about 10-15 mol% was found to be most stable, undergoing the least degradation during the repeated cycles. The origin of the mechanism dominating the least degradation during the repeated cycles was the reduction of lithium ion trapping sites in the films, which results in a increased durability.

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TEM Study on the Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots

  • Kim, Hyung-Seok;Suh, Ju-Hyung;Park, Chan-Gyung;Lee, Sang-Jun;Noh, Sam-Gyu;Song, Jin-Dong;Park, Yong-Ju;Lee, Jung-Il
    • Applied Microscopy
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    • v.36 no.spc1
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    • pp.35-40
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    • 2006
  • Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.