• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.103-103
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• 2003

ZnO$_{1-x}$(또는 Zn$_{1+x}$O) 산화아연은 과잉의 아연(또는 oxygen vacancy)이 도우너(donor) 역할을 하는 비화학양론적 n형 산화물 반도체이다. ZnO는 높은 투과율을 가지고 온도나 주변환경에 대해 매우 안정하며, 또한 이미 상용화된 ITO (Indium tin oxide)에 비해 식각 특성이 우수하고, 수소 플라즈마에 대한 저항성이 크다는 장점 때문에 가스센서와 디스플레이용 소자 등 다양한 분야에 응용이 가능하다. ZnO 박막은 CVD, Reactive Magnetron Sputtering, Electron-beam Evaporation 등 여러 가지방법으로 제작할 수 있다. 본 연구에서는 형성된 박막의 구성성분이 타겟의 성분과 유사하고 낯은 기판온도에서도 박막이 형성되어지는 장점을 가지는 Pulsed Laser Deposition 방법을 사용하여 유리 기판위에 ZnO 박막을 형성하였다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.725-729
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• 2014

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs) was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for the reduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the results showed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of power conversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by 0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by using electrochemical impedance analyzer (EIS).

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.643-645
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• 2008

Stainless steel 304 and 316 plates were deposited with the multi-layered coatings of titanium film (0.1um) and gold film (1-2um) by an electron beam evaporation method. The XRD patterns of the stainless steel plates modified with the multi-layered coatings showed the crystalline phases of the external gold film and the stainless steel substrate. Surface microstructural morphologies of the stainless steel bipolar plates modified with multi-layered coatings were observed by AFM and FE-SEM images. The external gold films formed on the stainless steel plates showed microstructure of grains of about 100nm diameter. The grain size of the external surface of the stainless steel plates increased with the gold film thickness. The electrical resistance and water contact angle of the stainless steel bipolar plates covered with multi-layered coatings were examined with the thickness of the external gold film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.432-437
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• 1999

We have fabricated an in situ ellipsometer operating at He-Ne wavelength. It can be applied to the real-time, in-situ tracking of the ellisometric change which occurs during various sample treatments. As a rotating analyzer type, all optical elements and related parts are designed to share a common hollow-axis configuration, and hence the ellipsometer is compact in shape and simple in design. It is mountable on the spare ports of vacuum chamber with ease. Using this ellipsometer, we observed the effective density variation of previously grown $TiO_2$ thin films by using electron beam evaporation. The packing density of the as-grown film was 82%. When exposed to atomsphere, the micro-void of the film was filled with water vapor. This water-filled $TiO_2$ thin film was subject to heating/cooling cycles in vacuum and the ellipsometric variation versus temperature and cycling number was measured in real time using this in situ He-Ne ellipsometer.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.71-79
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• 1996

Yttrium thin film, 580nm thick, was prepared by electron beam evaporation. Film was hydrogenated room temperature upto 40 bar hydrogen pressure, without any activation process. Hydrogen concentration was determined by a quartz-crystal microbalance(QCM) method. YH2.9 sample was made without any pulverization. Electrical resistance was measured by four-point DC method in the temperature range between room temperature and 30K for various hydrogen concentration, x=0 to 2.9 of YHx sample. Temperature dependent resistance of YH2.9 shows low temperature minimum at 105K, the metal-semiconductor transition at 260K, and a hystersis above 210K.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.122-130
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• 1996

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.

• Progress in Superconductivity
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• v.11 no.2
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• pp.158-161
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• 2010

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.19-27
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• 2003

Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.25-25
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• 2014

박막의 제조는 많은 연구의 기초가 되는 시편을 만드는 과정으로, 현대의 과학기술 연구개발에서 매우 중요한 공정의 하나이다. 그러나 박막의 제조는 제조하는 사람의 숙련도나 장치에 의존하는 경우가 많고 경우에 따라서는 원하는 특성의 박막을 제조하기 어려운 경우도 많다. 그러다보니 경험이 없는 연구자의 경우는 때때로 까다로움과 번거로움을 느끼게 되며, 안정된 공정을 찾기까지 많은 시간을 소비 하게 된다. 특히 부적절한 증발방법의 선정에 따른 실험 결과는 경제적인 손실을 초래할 뿐만 아니라 실험하는 사람을 좌절시키는 가장 큰 요인이 되어왔다. 본 논문에서는 박막 제조에 널리 이용되는 저항가열 및 전자빔 증발원을 이용하여 다양한 물질에 대한 증발특성을 조사하고 그 결과를 발표하고자 한다.