• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.345-345
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• 2010

Thin film of $TiO_2$ deposited on carbon paper was fabricated by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. In this work, the photocatalytic activities of $TiO_2$ films with and without e-beam treatment were compared. The samples were treated by e-beam using e-beam energy of 1MeV and exposure range between 5 and 15kGy. The photocatalytic activity was evaluated by the photocatalytic degradation of methyleneblue (MB) under UV irradiation (365nm) at room temperature using an UV-vis spectroscopy. The surface properties were characterized by scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The sample treated by the low radiation dose has more catalytic activity than other ones. SEM images show that the high radiation dose caused the $TiO_2$ to aggregation on carbon paper. Due to the aggregation of $TiO_2$, the partially exposed carbon paper was oxidized.

• Journal of Korean Society for Quality Management
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• v.42 no.2
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• pp.179-187
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• 2014

Purpose: Since several problems were found when present non-conducting metal coating process was applied to mass production, we study and develop to improve those problems. Methods: In this paper, a couple of analysis methods such as surface hardness, XPS spectrum analysis, morphology, and reflection ratio were used. Results: This paper suggest a new possibility of Non-conducting thin metal coating method that has quality of mass production phase without UV coating process. Conclusion: By the result of analysis, we can set optimized process conditions of the electro deposition coating using electron beam.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.6-6
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• 1992

Ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity crystalline polyimide (PI) film. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ICB sources, Fourier trans forminfraredspectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), and Transmission electron microscopy (TEM)study show that the bulk and surface chemical properties and the crystalline structure are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage, At optimum ICBD conditions, the PI films have a maximum imidization, negligible impurities(∼1% isoimide), and a good crystalline structure probably due to the high surface migration energy and surface cleaning effect. These characteristics are superior to those of films deposited by other techniques such as colvent cast, vapowr deposition, or sputtering techniques.

• Journal of Magnetics
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• v.14 no.4
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.11
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• pp.243-247
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• 1999

Carbon nitride coatings on the substrates of 0.55wt% C - 1.68wt% Mn induction-hardened rolling elements were prepared by ion beam assisted deposition. It was found through metallographic observation that the carbon nitride coatings appeared lamellar-type repeated layers parallel to the surface of substrate. Surface roughness of the coated specimens was improved in comparison with that of the substrates. Wear resistance of the coatings was evaluated using Polymet RCF-1 machine with a constant supply of lubricant followed by Weibull statistical analysis and scanning electron microscopy. the results indicated failure due to old-age wear-out of the coatings was mainly caused by numerous micropits formed on the wear track during repeated rolling contact.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.371-376
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of $800^{\circ}C$ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and $1{\mu}m$, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is ($2{\times}4$). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.6
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• pp.59-69
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• 2021

Directed energy deposition (DED) is an additive manufacturing technology involving a focused high-power laser or electron beam propagating over the substrate, resulting in melt pool formation while simultaneously supplying metal powder to the melt pool area to deposit the material. DED is performed to repair and strengthen parts in various applications, as it can be easily integrate local area cladding and cross-material deposition. In this study, we characterize stainless steel 316 L parts fabricated via DED based on various deposition conditions and geometries to widen the application of DED. The deposition characteristics are investigated by varying the laser power and powder feed rate. Multilayer deposition with a laser power of 362 W and a powder feed rate of 6.61 g/min indicate a height closest to the design value while affording high surface quality. The microhardness of the specimen increases from the top to the bottom of the deposited area. Tensile tests of specimens with two different deposition directions indicate that horizontally long specimens with respect to a substrate demonstrate a higher ultimate tensile strength and yield strength than vertically long specimens with lower elongation.

• Journal of IKEEE
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• v.21 no.3
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.252-257
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• 2005

A high-brightness electron beam source for a microfocus X-ray tube has been fabricated using a carbon-nanotube (CNT) field emitter. The electron source consists of cathode that includes a CNT field emitter, a beam-extracting grid, and an anode that accelerates that electron beam. The microfocus X-ray tube requires an electron beam with the diameter of less than 5 $\mu$m and beam current of higher than 30 $\mu$A at the position of the X-ray target. To satisfy the requirements, the geometries of the field emitter tips and the electrodes of the gun was optimized by calculating the electron trajectories and beam spatial profile with EGUN code. The CNT tips were fabricated with successive steps: a tungsten wire with the diameter of 200 $\mu$m was chemically etched and was subsequently coated with CNTs by chemical vapor deposition. The experiments of electron emission at the fabricated CNT tips were performed. The design characteristics and basic experimental results of the electron source are reported.