• Title/Summary/Keyword: Electron-beam deposition

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In-situ electron beam growth of $YBa_2Cu_3O_{7-x}$ coated conductors on metal substrates

  • Jo, W.;Ohnishi, T.;Huh, J.;Hammond, R.H.;Beasley, M.R.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.175-180
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    • 2007
  • High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

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A Study on the Properties of AZO Films Surface-annealed by RF Magnetron Sputtering and Electron Beam Radiation (전자빔 조사에 의해 표면열처리된 AZO 박막의 물성변화에 관한 연구)

  • Shin, Chang-Ho;Jeong, Cheol-Woo;Kim, Yu-Sung;Chae, Ju-Hyun;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.23 no.4
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    • pp.205-209
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    • 2010
  • Transparent and conductive AZO films were deposited on the glass by using radio frequency (RF) magnetron sputtering with intense electron radiation, simultaneously. After deposition, the effect of electron radiation energy on the optical and electrical properties of AZO was investigated. In XRD measurements, the films irradiated with intense electron beam show the larger grain size than that of the films prepared without electron radiation. Sheet resistance was also dependent on the electron radiation energy, while the optical transmittance in visible wavelength region was not affected seriously by electron radiation. X-.ray diffraction, UV-Vis spectrophotometer and four point probes were used to observe the crystallization, optical transmittance and sheet resistance, respectively.

Influence of Electron Beam Irradiation on the Structural, Optical, and Electrical Properties of ZTO/Ag/ZTO Trilayer Films

  • Eom, Tae-Young;Song, Young-Hwan;Gong, Tae-Kyung;Kim, Daeil;Cheon, Joo-Yong;Cha, Byung-Chul
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.217-220
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    • 2017
  • We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

Study on the TiO2-Ag Nanoparticle Coated PET Fabric with an Atomizer (아토마이저를 이용한 PET 직물의 TiO2-Ag 나노입자 코팅 연구)

  • Lee, Hyun Woo;Hong, Tae Min;Son, Han-Geul;Lim, Sung Chan;Shin, Weon Gyu;Lee, Seung Goo
    • Textile Coloration and Finishing
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    • v.26 no.2
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    • pp.99-105
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    • 2014
  • In this study, $TiO_2$ and Ag powders were deposited on the PET fabric using an atomizer in order to study the characteristics of particle deposited fabric. To improve the particle deposition, the surface of the fabric was pre-treated with an electron beam and its effect was studied with the deposition of those elements on the fabric. The SEM was used to observe the morphology of the deposition fabric and through the EDS analysis, the deposition of $TiO_2$ and Ag was confirmed. Also, the absorbance of the particle deposited fabric was measured using the Methylene Blue to verify the photolysis nature of $TiO_2$. Moreover, the antibiotic nature of Ag on the surface of the PET fabric was identified through the antibiosis test.

Effect of Substrate Temperature and O2 Introduction With ITO Deposition by Electron Beam Evaporation on Polycyclic Olefin Polymer (전자빔으로 폴리사이클릭 올레핀 기판에 ITO 증착시 기판온도 및 산소 도입의 영향)

  • Ahn, Hee-Jun;Ha, KiRyong
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.742-748
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    • 2005
  • Transparent conductive indium-tin oxide (ITO) films are widely used as transparent electrodes for flat panel displays. Many of the ITO films for practical use have been prepared by magnetron sputtering, chemical vapor deposition, electron beam evaporation, etc. An oxide target composed of 10 wt% $SnO_2$ and 90 wt% $In_2O_3$ has been deposited onto polycyclic olefin polymer (POP) substrate by electron beam evaporation. POP has a higher glass transition temperature ($Tg=330^{\circ}C$) than other conventional polymers. In this study, the effects of substrate temperature and the $O_2$ introduction flow rate were investigated in terms of physical, electrical and optical properties of deposited ITO films. We investigated the effects of processing variables such as substrate temperature and the oxygen introduction flow rate. The best electrical and optical properties of deposited ITO films obtained from this study were electrical resistivity value of ${\rho}=1.78{\times}10^{-3}{\Omega}{\cdot}cm$ and optical transmittance of about 85% at 8 sccm (Standard Cubic Centimeter per Minute) $O_2$ introduction flow rate, $5{\AA}/sec$ deposition rate, $1000{\AA}$ deposited ITO thickness and $200^{\circ}C$ substrate temperature.

Microstructure Analysis of Fe Thin Films Prepared by Ion Beam Deposition (이온빔 증착법에 의해 제조된 철박막의 미세조직 분석)

  • Kim, Ka Hee;Yang, Jun-Mo;Ahn, Chi Won;Seo, Hyun Sang;Kang, Il-Suk;Hwang, Wook-Jung
    • Korean Journal of Metals and Materials
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    • v.46 no.7
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    • pp.458-463
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    • 2008
  • High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

Design of Self-ion assisted beam source (SIAB) based on electron focusing with concentric symmetrical electric field and Cu thin film growth by SIAB (동심원형 대칭 전기장 집속 방식을 응용한 자가 이온 보조 소스 제작 및 Cu 박막 증착)

  • 송재훈;김기환;이충만;최성창;송종한;정형진;최원국
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.121-126
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    • 1999
  • Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

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Lifetime Performance of EB-PVD Thermal Barrier Coatings with Coating Thickness in Cyclic Thermal Exposure

  • Lu, Zhe;Lee, Seoung Soo;Lee, Je-Hyun;Jung, Yeon-Gil
    • Korean Journal of Materials Research
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    • v.25 no.10
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    • pp.571-576
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    • 2015
  • The effects of coating thickness on the delamination and fracture behavior of thermal barrier coating (TBC) systems were investigated with cyclic flame thermal fatigue (FTF) and thermal shock (TS) tests. The top and bond coats of the TBCs were prepared by electron beam-physical vapor deposition and low pressure plasma spray methods, respectively, with a thickness ratio of 2:1 in the top and bond coats. The thicknesses of the top coat were 200 and $500{\mu}m$, and those of the bond coat were 100 and $250{\mu}m$. FTF tests were performed until 1140 cycles at a surface temperature of $1100^{\circ}C$ for a dwell time of 5 min. TS tests were also done until more than 50 % delamination or 1140 cycles with a dwell time of 60 min. After the FTF for 1140 cycles, the interface microstructures of each TBC exhibited a sound condition without cracking or delamination. In the TS, the TBCs of 200 and $500{\mu}m$ were fully delaminated (> 50 %) within 171 and 440 cycles, respectively. These results enabled us to control the thickness of TBC systems and to propose an efficient coating in protecting the substrate in cyclic thermal exposure environments.

Fabrication of High-T$_c$ Superconducting Josephson Junctions by Ar lon Milling and E-Beam Lithography (Ar 이온빔 식각과 전자선리소그래피 방벙으로 제작한 고온초전도 조셉슨 접합)

  • Lee, Moon-Chul;Kim, In-Seon;Lee, Jeong-O;Yoo, Kyung-Hwa;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.91-94
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    • 1999
  • A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

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탄소 음이온 빔에 의해 증착된 DLC 필름의 특성 평가

  • 김인교;김용환;이덕연;최동준;한동원;백홍구
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.59-59
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    • 1999
  • DLC(diamond-like carbon)필름은 다이아몬드와 유사한 강도, 낮은 마차계수, 높은 Optical band gap, NEA(negative electron affinity)등의 우수한 특성을 가지고 있어, 내마모 코팅이나 정보저장 매체의 윤활 코팅, FED(field emission display)의 전계방출소자등 다양한 분야에의 응용이 연구되고 있다. DLC 필름은 PECVD(plasma enhanced chemical vapor deposition), IBAD(ion beam assisted deposition), Laser ablation, Cathodic vacuum arc등의 process를 이용하여 증착되고 있다. 특히 이러한 필름의 물성은 입사되는 이온의 에너지에 의해 좌우되는데, Lifshitz 등의 연구에 의하여 hyperthermal species를 이용한 DLC 필름의 성장은 초기에 subsurface로의 shallow implantation이 일어난 후 높은 sp3 fraction을 갖는 필름이 연속적으로 성장한다는 subplantation model이 제시 되었다. 본 연구에서는 기판과 subplantation 영역이 이후 계속하여 증착되는 순수 DLC 필름의 특성 변호에 미치는 영향에 대하여 관심을 가지고 실험을 행하였다. 본 실험에서는 상기 제시되어 있는 방법보다도 더욱 정확하고도 독립적으로 탄소 음이온의 에너지와 flux를 조절할 수 있는 Cs+ ion beam sputtering system을 이용하여 탄소 음이온의 에너지를 40eV에서 200eV까지 변화시키며 필름을 증착하였다. Si(100) 웨이퍼를 기판으로 사용하였고 증착 압력은 5$\times$10-7torr 였으며 인위적인 기판의 가열은 하지 않았다. 또한 Ion beam deposited DLC film의 growth process를 연구하기 위하여 200eV의 탄소 음이온을 시간(증착두께)을 변수로 하여 증착하였고, 이 때에는 Kaufman type의 gas ion beam을 이용하여 500eV의 Ar+ ion으로 pre-sputering을 행하였다. 탄소 음이온의 에너지와 증착두께에 따라 증착된 film 내의 sp3/sp2 ratio 의 변화를 XPS plasmon loss 와 Raman spectra를 이용하여 분석하였다. 또한 증착두께에 따른 interlayer의 결합상태를 관찰하기 위하여 AES와 XPS 분석을 보조로 행하였다.

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