• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.85.1-85.1
• /
• 2010

$Cu(In,Ga)Se_2$ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) $2.1{\times}10^{-7}{\sim}3.0{\times}10^{-7}$ Torr, indium (In) $8.0{\times}10^{-7}{\sim}9.0{\times}10^{-7}$ Torr, gallium (Ga) $1.4{\times}10^{-7}{\sim}2.8{\times}10^{-7}$ Torr, and selenium (Se) $2.1{\times}10^{-6}{\sim}3.2{\times}10^{-6}$ Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.6
• /
• pp.1141-1148
• /
• 2008

Geometry optimizations and electronic structure calculations are reported for meso-tetraphenyl porphyrin (TPP) and a series of meso-substituted catecholic porphyrins (KP99150, KP99151, KP99152, KP99153, and KP99090) using density functional theory (DFT). The calculated B3LYP//RHF bond lengths are slightly longer than those of LSDA//RHF. The calculated electronic structures clearly show that TPP and meso-catecholic group contribute to π-electron conjugation along porphyrin ring for HOMO and LUMO, significantly reduced the HOMO-LUMO gap. The wavelength due to B3LYP energy gaps is favored with experimental value in Soret (B), and LSDA energy gaps are favored with experimental value in visible bands (Q). The electronic effect of the catecholic groups is to reduced energies of both the HOMOs and LUMOs. However, the distortion of porphyrin predominantly raises the energies of the HOMOs, so the net result is a large drop in HOMO and smaller drop in LUMO energies upon meso-substituted catecholic group of the porphyrin macrocycle as shown in KP99151 and KP99152 of Figure 5(a). These results are in reasonable agreement with normal-coordinate structural decomposition (NSD) results. The HOMO-LUMO gap is an important factor to consider in the development of photodynamic therapy (PDT).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.76.1-76.1
• /
• 2015

Optical resonances of metallic or dielectric nanoantennas enable to effectively convert free-propagating electromagnetic waves to localized electromagnetic fields and vice versa. Plasmonic resonances of metal nanoantennas extremely modify the local density of optical states beyond the optical diffraction limit and thus facilitate highly-efficient light-emitting, nonlinear signal conversion, photovoltaics, and optical trapping. The leaky-mode resonances, or termed Mie resonances, allow dielectric nanoantennas to have a compact size even less than the wavelength scale. The dielectric nanoantennas exhibiting low optical losses and supporting both electric and magnetic resonances provide an alternative to their metallic counterparts. To extend the utility of metal and dielectric nanoantennas in further applications, e.g. metasurfaces and metamaterials, it is required to understand and engineer their scattering characteristics. At first, we characterize resonant plasmonic antenna radiations of a single-crystalline Ag nanowire over a wide spectral range from visible to near infrared regions. Dark-field optical microscope and direct far-field scanning measurements successfully identify the FP resonances and mode matching conditions of the antenna radiation, and reveal the mutual relation between the SPP dispersion and the far-field antenna radiation. Secondly, we perform a systematical study on resonant scattering properties of high-refractive-index dielectric nanoantennas. In this research, we examined Si nanoblock and electron-beam induced deposition (EBID) carbonaceous nanorod structures. Scattering spectra of the transverse-electric (TE) and transverse-magnetic (TM) leaky-mode resonances are measured by dark-field microscope spectroscopy. The leaky-mode resonances result a large scattering cross section approaching the theoretical single-channel scattering limit, and their wide tuning ranges enable vivid structural color generation over the full visible spectrum range from blue to green, yellow, and red. In particular, the lowest-order TM01 mode overcomes the diffraction limit. The finite-difference time-domain method and modal dispersion model successfully reproduce the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.331-331
• /
• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Korean Journal of Materials Research
• /
• v.22 no.3
• /
• pp.140-144
• /
• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

• Korean Journal of Materials Research
• /
• v.22 no.3
• /
• pp.145-149
• /
• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.106.1-106.1
• /
• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• Korean Journal of Clinical Laboratory Science
• /
• v.47 no.1
• /
• pp.6-10
• /
• 2015

Photodynamic therapy (PDT) apply photosensitizers and light. The purpose of this study was to evaluate the in vitro efficacy of PDT using blue LED (light emitting diode) with photofrin and radachlorin for Propionibacterium acnes. The colony forming units method was used to assess the antibacterial activity. Suspension (1 mL) containing P. acnes at $1{\times}10^5CFU/mL$ were prepared and then 2 fold serial diluted to $12.5{\mu}g/mL$ from $50{\mu}g/mL$ concentration of photofrin and radachlorin. After 60 minutes incubation, light was irradiated for 10 to 30 minutes using the following light source of wavelength 460 nm, each energy density 36, 72 and $108J/cm^2$. Bacterial growth was evaluated after 72 hours incubation in a Phenylethanol Blood Agar (PEBA) culture. In addition, flow cytometric analysis were performed to measure the live cell after PDT. Also transmission electron microscopy (TEM) was employed to evaluate the effect of pathogens by PDT. The PDT Group was perfectly killed to all kind of photosensitizers dose of $12.5{\mu}g/mL$ with irradiation of 10 minutes. Also other Groups were killed to all kind of photosensitizers dose of $6.25{\mu}g/mL$ with irradiation time of 20 and 30 minutes. The flow cytometry showed a lower number of viable bacteria in the PDT group compared to the control group. The images of the TEM results were showed in cytoplasmic membrane damage and partially deformed to cell morphologies. These results suggest that radachlorin and photofrin combine blue LED PDT can be effectively treated when was proved treatment for acnes therapy.

• Journal of Powder Materials
• /
• v.21 no.2
• /
• pp.119-123
• /
• 2014

Pt has been widely used as catalyst for fuel cell and exhausted gas clean systems due to its high catalytic activity. Recently, there have been researches on fabricating composite materials of Pt as a method of reducing the amount of Pt due to its high price. One of the approaches for saving Pt used as catalyst is a core shell structure consisting of Pt layer on the core of the non-noble metal. In this study, the synthesis of Pt shell was conducted on the surface of $TiO_2$ particle, a non-noble material, by applying ultraviolet (UV) irradiation. Anatase $TiO_2$ particles with the average size of 20~30 nm were immersed in the ethanol dissolved with Pt precursor of $H_2PtCl_6{\cdot}6H_2O$ and exposed to UV irradiation with the wavelength of 365 nm. It was confirmed that Pt nano-particles were formed on the surface of $TiO_2$ particles by photochemical reduction of Pt ion from the solution. The morphology of the synthesized Pt@$TiO_2$ nano-composite was examined by TEM (Transmission Electron Microscopy).

• Advances in nano research
• /
• v.5 no.3
• /
• pp.193-201
• /
• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.