• Bulletin of the Korean Chemical Society
• /
• 제35권2호
• /
• pp.392-396
• /
• 2014

New organic-inorganic composite of 2,4-dihydroxybenzophenone (BP-1) encapsulation into dodecylbenzenesulfonate (DBS) modified layered double hydroxide (LDH) was successfully prepared. The surface, structural, thermal and absorption properties of the BP-1/DBS-LDH nanohybrid was characterized by BET analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TG) and diffuse reflectance UV-Vis absorbance spectra (DRUV-vis). The interlayer configuration of composite and the adsorption mechanism of BP-1 on MgAl-DBS-LDH were discussed. It was suspected that DBS anions located in the form of monolayer arrangement with a $75^{\circ}$ anti parallel angle between dodecylbenzenesulfonate chain axis. The diffuse reflectance UV-Vis absorbance results revealed that the UV absorbing wavelength of BP-1/DBS-LDH evidently extends to about 400 nm, which shows that the BP-1/DBS-LDH has the potential application as a UV absorber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제21권2호
• /
• pp.99-103
• /
• 2008

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controlling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400 nm to 1000 nm) reflectance with acid texturing is 4.64 % less than alkali texturing.

• Journal of the Korean Chemical Society
• /
• 제37권3호
• /
• pp.335-343
• /
• 1993

The maximum absorption wavelengths of charge-transfer complexes of naphthalene, ${\alpha}-and{\beta}-methyl$ naphthalene and 1,2-, 2,3-and 2,6-dimethyl naphthalene with chloranil have been measured with a UV spectrophotometer in ethylene chloride, methylene chloride, and chloroform at 10, 15, 20, and 25$^{\circ}C$. This absorption band was interpreted as the charge transfer band of a 1 : 1 molecular complex, and the maximum absorption wavelength was changed as a function of solvent and temperature. Their formation constants (K$_f$) were decreased with the polarity of solvent and the increase of temperature. Thus, the influences of solvent and temperature on the formation constant have been discussed as consideration of thermodynamic properties, and the electronic and steric effects of electron donors on formation constant have been also discussed.

• Korean Chemical Engineering Research
• /
• 제54권2호
• /
• pp.274-277
• /
• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• 제60권11호
• /
• pp.2088-2092
• /
• 2011

The accelerated thermal aging of CSPE(chloro sulfonate polyethylene) of test cables were carried out for the period equal to 10, 20 and 30 years in air at $100^{\circ}C$, respectively. The CSPE cables(TAIHAN electric wire Co. Ltd) which installed in nuclear power plant for three years were used as starting materials. Condition monitering methods of the accelerated thermal aging of CSPE cables were estimated through indenter modulus and OIT(oxidation induction time) of IEC 62582, and those were newly estimated through volume electrical resistivity, ultrasound reflection time, density, FE-SEM(field emission scanning electron microscopy), XPS(x-ray photoelectron spectroscopy), EDS(energy dispersive spectroscopy), and WD-XRF(wavelength dispersive x-ray fluorescence). A new condition monitoring methods of the accelerated thermal aging of CSPE cables were generally coincident with trend of indenter modulus expect EDS, XPS and XRF. A volume electrical resistivity among new condition monitoring methods of the accelerated thermal aging of CSPE cables is excellent. It is considered that life-time of CSPE cable can be predicted through volume electrical resistivity, if CSPE jacket was aged for period such as more than 20 years.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제13권11호
• /
• pp.943-949
• /
• 2000

In this paper, the single and double heterostructure organic light-emitting devices(OLEDs) were fabricated. The single heterostructure OLED(TYPE 1) is consisted of TPD as a HTL(hole transfer layer) and Alq$_3$as an EML(emitting layer). The double heterostructure OLED(TYPE 2) is consisted of TPD as a HTL, Alq$_3$as an EML and PBD as an ETL(electron transfer layer). The another double heterostructure OLED(TYPE 3) is consisted of TPD as a HTL, PBD as an EML and Alq$_3$as an ETL. We obtained a strong green emission device with maximum EL emission wavelength 500nm in TYPE 3. When the applied voltage was 12V, the emission luminescence was 120.9cd/㎡. The chromaticity index of TYPE 3 was x=0.29, y=0.50. In the characteristic plot of current-voltage, TYPE 3 device was turned on at 6.9V. This voltage was a fairly low turn-on voltage. TYPE 1 and 2 device were turned on at 10V and 8.9V respectively. These types showed no good properties over that of TYPE 3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제28권9호
• /
• pp.571-576
• /
• 2015

In this study, we developed a lead-free $P_2O_5-V_2O_5-ZnO$ glass frit for sealing OLED using laser irradiation. The frit satisfied the characteristics required for laser sealing such as low glass transition temperature, low coefficient of thermal expansion (CTE), high water-resistance, and high absorption at the wavelength of the laser beam. Ceramic fillers were added to the glass frit in order to further reduce and match its CTE with that of the commercial glass substrate. The addition of Zirconium Tungsten Phosphate (ZWP) to the frit yielded the most desirable results, reducing the CTE to $45.4{\times}10^{-7}/^{\circ}C$, which is very close to that of the glass substrate ($44.0{\times}10^{-7}/^{\circ}C$). Successful formation of a solid sealing layer was observed by optical and scanning electron microscopy.

• Journal of Surface Science and Engineering
• /
• 제41권3호
• /
• pp.94-101
• /
• 2008

A new convenient magnet array module is designed to investigate effects of magnetic field array on magnetron discharge characteristics. Magnetic field analysis showed good agreement of measured discharge region by a CCD device which has a high quantum efficiency over visible wavelength range. OES (optical emission spectroscopy) showed major emission peaks are from electronic transitions in 400 nm range and 800 nm range. Effects of driving voltage characteristics were analyzed in a point of electron drift trajectories and ionizing collision frequencies. Pulsed dc with a fast rising and falling time was analyzed to have potential to increase ionization collisions by putting a burst of hot electrons and to raise sheath potential. From measured voltage and current waveform, maximum of -1000 V peak was generated with $-400\;V_{rms}$ conditions. Possibility of a properly designed magnetron cathode was shown to be used as a melting device. Cu was successfully melted with power density of a several tens of $W/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.16-17
• /
• 2007

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400nm to 1000nm) reflectance with acid texturing is 4.64% less than alkali texturing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.70-71
• /
• 2007

Multicrystalline silicon(mc-Si) solar cells are steadily increasing their share of the PV market due to the lower material costs. However, commercial mc-Si solar cells have lower efficiency than singlecrystalline silicon solar cells. To improve efficiency of mc-Si solar cells, it is important to reduce optical losses from front surface reflection. Isotropic etching with acid solution based on hydrofluoric acid(HF) and nitric acid$(HNO_3)$ is one of the promising methods that can reduce surface reflectance for mc-Si solar cells. Anisotropic etching is not suitable for mc-Si because of its various grain orientations. In this paper, we isotropically etched mc-Si using acid solution. After that, etched surface was observed by Scanning Electron Microscope(SEM) and surface reflectance was measured. We obtained 29.29% surface reflectance by isotropic etching with acid solution in wavelength from 400nm to 1000nm for fabrication of mc-Si solar cells.