• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.432-437
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• 1999

We have fabricated an in situ ellipsometer operating at He-Ne wavelength. It can be applied to the real-time, in-situ tracking of the ellisometric change which occurs during various sample treatments. As a rotating analyzer type, all optical elements and related parts are designed to share a common hollow-axis configuration, and hence the ellipsometer is compact in shape and simple in design. It is mountable on the spare ports of vacuum chamber with ease. Using this ellipsometer, we observed the effective density variation of previously grown $TiO_2$ thin films by using electron beam evaporation. The packing density of the as-grown film was 82%. When exposed to atomsphere, the micro-void of the film was filled with water vapor. This water-filled $TiO_2$ thin film was subject to heating/cooling cycles in vacuum and the ellipsometric variation versus temperature and cycling number was measured in real time using this in situ He-Ne ellipsometer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.178-180
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• 2003

We performed semiempirical (AMl and ZINDO) and ab initio (HF and DFT) calculations, to investigate molecular structures and optical properties of DCM and its derivatives. DCM and its derivatives are used as a red fluorescent dopant of the organic electroluminescent host materials, $Alq_3$. We have studied the relationship between the molecular structure and the optical properties of these molecules for the improvement of EL efficiencies. Wavelength at the absorption maximum was found to be red-shifted when the molecule is substituted with both strong electron donating and withdrawing functional groups. A new red fluorescent dye was predicted by QSPR study based on calculations and experimental data.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1992.10a
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• pp.101-105
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• 1992

Machined graphite/epoxy composite surfaces were studied by using SEM(Scanning Electron Microscopy). surface profilometry and its analysis to determine suitable surface describing parameters for machined unidirectional and laminate composite surface. The surface roughness and profile are found to be highly dependent on the fiber layup direction and the measurement direction. Machined unidirectional and 0.deg. 45 .deg. 90 .deg. plies in laminate composite surface profiles are found to be Gaussian in the direction of machining. Since there exist bare fibers without matrix smearing in 0 .deg. ply, higher surface roughness values were found in this orientation. It was possible to machine 90 .deg. and -45 .deg. plies due to the adjacent plies, which were holding those plies. It was found that the microgeometrical variations in terms of roughness parameters Ra without Dy (maximum Damage Depth) region and Dy are better descriptors of the machined laminate composite surface than commonly used roughness parameters Ra and Ra. The characteristics of surface profiles in laminate composite are well represented in CHD (Cumulative Height Distribution) plot and PPD (Percentage Probability Density) plot. Also, the power spectral density function is shown to be capable of identifying the wavelength distribution of the machining damage.

• Journal of the Optical Society of Korea
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• v.13 no.2
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• pp.218-222
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• 2009

In this paper, we report the optical and structural properties of a bilayer circular filter fabricated by a glancing angle deposition technique. The bilayer circular filter is realized by a two-layer $TiO_2$ helical film with layers of opposite structural handedness. It is found that the bilayer circular filter reflects both right and left circularly polarized light with wavelength lying in the Bragg regime. The microstructure of the bilayer circular filter is also investigated using a scanning electron microscope.

• Journal of Power System Engineering
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• v.19 no.3
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• pp.5-10
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• 2015

Femtosecond laser machining has been applied for creating a sensor function in silica glass optical fibers. Femtosecond laser pulses make it possible to fabricate micro structures in processed regions of a very thin glass fiber line because femtosecond laser pulses can extremely minimize thermal effects. With the laser machining to optical fiber using a single shot of 210-fs laser at a wavelength of 800 nm, it was observed that a processed region surrounded a thin layer which seemed to be a hollow cavity monitored by scanning electron microscopy (SEM). This study aims at a theoretical investigation for the processed region by using a numerical analysis in order to embed sensing function to optical fibers. Numerical methods based finite element method (FEM) has been used for an optical waveguide modeling. This report suggests two types modeling and describes a comparative study on optical losses obtained by the experiment and the numerical analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.1-5
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• 1996

Noncrystalline films of diamond-like carbon (DLC) have been prepared by laser ablation technique at room temperature. A Q-switched Nd-YAG laser beam with wavelength of 1064 nm and pulse duration of 10 ns was focused onto a graphite target with power densities of about $10^9 W/\textrm{cm}^2$. The physical properties of the resulting films were analyzed with density, hardness, and resistivity measurements. The surface and bonding structure were investigated by atomic force microscopy (AFM), Raman spectroscopy, electron energy loss spectroscopy (EELS).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.408-408
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• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.459.1-459.1
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• 2014

Because both $TiO_2$ and ZnO has superior characteristic optically and electrically, there are various of research for these materials. However, they have large band gap energy which correspond with not visible light, but UV light. To make up for this disadvantage, Quantum dots (CdS, CdSe) which can absorb the visible light could be deposited on $ZnO/TiO_2$ nanostructure so that the the photoelectrochecmical cell can absorb the light that has larger region of wavelength. Both $TiO_2$ and ZnO can be grown to one-dimensional nanowire structure at low temperature through solutional method. Three-dimensional hierarcical $ZnO/TiO_2$ nanostructure is fabricated by applying these process. Large surface area of this structure make the light absorbed more efficiently. Through type 2 like-cascade energy band structure of nanostructure, the efficient separation of electron-hole pairs is expected. Photoelectrochemical charateristics are found by using these nanostructure to photoelectrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.115-116
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• 2005

Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.