• Bulletin of the Korean Chemical Society
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• 제33권3호
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• pp.795-802
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• 2012

Geminate electron-hole recombination in organic solids in the presence of a donor-acceptor heterojunction is studied by computer simulations. We analyze how the charge-pair separation probability in such systems is affected by energetic disorder of the media, anisotropy of charge-carrier mobilities, and other factors. We show that in energetically disordered systems the effect of heterojunction on the charge-pair separation probability is stronger than that in idealized systems without disorder. We also show that a mismatch between electron and hole mobilities reduces the separation probability, although in energetically disordered systems this effect is weaker compared to the case of no energetic disorder. We demonstrate that the most important factor that determines the charge-pair separation probability is the ratio of the sum of electron and hole mobilities to the rate constant of recombination reaction. We also consider systems with mobility anisotropy and calculate the electric field dependence of the charge-pair separation probability for all possible orientations of high-mobility axes in the donor and acceptor phases. We theoretically show that it is possible to increase the charge-pair separation probability by controlling the mobility anisotropy in heterojunction systems and in consequence to achieve higher efficiencies of organic photovoltaic devices.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• Journal of the Optical Society of Korea
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• 제10권4호
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• pp.184-187
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• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.305-306
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• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• 한국진공학회지
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• 제10권2호
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• pp.257-261
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• 2001

InGaAs/GaAs 초격자 구조들 사이에 InAs/GaAs 양자점을 MBE로 성장하고 광특성을 측정한 결과 매우 균일한 양자점을 얻을 수 있었다. Self-consistent한 이론 계산으로부터 얻은 p-i-n 구조의 최적 조건으로 단일광자구조를 성장하고 단일광자소자를 e-beam lithography를 이용하여 제작하였다. 전기적 특성인 I-V곡선에서 나타난 전기 이력현상으로부터 단일 전자와 단일 정공이 다른 전압에서 투과하여 단일 전자-정공 재결합 현상이 나타나고 있음을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• 센서학회지
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• 제33권4호
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.232-242
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• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.