• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Applied Microscopy
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• v.45 no.4
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• pp.199-202
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• 2015

A simple and novel transmission electron microscopy (TEM) sample preparation method for phase change nanowire is investigated. A $Ge_2Sb_2Te_5$ (GST) nanowire TEM sample was meticulously prepared using nanomanipulator and gas injection system in a field emission scanning electron microscopy for efficient and accurate TEM analysis. The process can minimize the damage during the TEM sample preparation of the nanowires, thus enabling the crystallographic analysis of as-grown GST nanowires without unexpected phase transition caused by e-beam heating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.152-157
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• 1995

The electron transport coefficients in $SP_{6}$ gas is calculated and analysed for range of E/N values from 150∼800(Td) by a Monte Carlo simulation, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in neatly agreement with the respective experimental and theoretical for a range of E/N. The validity of the results obtained has been confirmed by a Monte Carlo simulation carried out parallel to the analysis.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.41-44
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• 2004

This paper describes the electron transport characteristics in $SF_6$-He gas calculated for range of E/N values from 50${\sim}$700[Td] by the Monte Carlo simulation(MCS) and Boltzmann equation(BEq) method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained by TOF method. The results gained that the values of the electron swarm parameters such as the electron drift velocity. the electron ionization or attachment coefficients. longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.72-75
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• 2001

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of $SF_6$ and $SF_6+Ar$ mixtures. The electron transport, ionization, and attachment coefficients for pure $SF_6$ and gas mixtures containing $SF_6$ has been analysed over the E/N range $30{\sim}300Td$ by a two term Boltzrnann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2% and 0.5% $SF_6+Ar$ mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1752-1754
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• 1998

Recently the research about electron transport characteristic and energy distribute function in mixture gases within Helium, has been used and developed widely as industrial quality improvement of extinguish characteristic, electrical dielectric strength ability of application of each species high voltage apparatus, gas plasma etching progress of work to use manufacture of semiconductor, thin film molding by CVD, insulation film to use ultra LSI, etc. This paper analyze electron transport characteristic in the range E/N $1{\sim}60$[Td], pressure $0.1{\sim}6.0$[Torr] by MCS. It is necessary to seek electron drift velocity, diffusion coefficient, lonization coefficients, characteristic energy, mean energy and electron energy distribution function as electron transport characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the