• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Applied Microscopy
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• v.50
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• pp.2.1-2.7
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• 2020

Electron energy loss spectroscopy (EELS) is an analytical technique that can provide the structural, physical and chemical information of materials. The EELS spectra can be obtained by combining with TEM at sub-nanometer spatial resolution. However, EELS spectral information can't be obtained easily because in order to interpret EELS spectra, we need to refer to and/or compare many reference data with each other. And in addition to that, we should consider the different experimental variables used to produce each data. Therefore, reliable and easily interpretable EELS standard reference data are needed. Our Electron Energy Loss Data Center (EELDC) has been designated as National Standard Electron Energy Loss Data Center No. 34 to develop EELS standard reference (SR) data and to play a role in dissemination and diffusion of the SR data to users. EELDC has developed and collected EEL SR data for the materials required by major industries and has a total of 82 EEL SR data. Also, we have created an online platform that provides a one-stop-place to help users interpret quickly EELS spectra and get various spectral information. In this paper, we introduce EEL SR data, the homepage of EELDC and how to use them.

• Proceedings of the Petrological Society of Korea Conference
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• 2009.05a
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• pp.9-9
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.57-61
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• 2010

Nanosized surface structures of Cu powders were investigated at the atomic scale by field-emission transmission electron microscope techniques. The nanoscale surface oxide layer on the Cu powder was analyzed to be the $CU_2O$ phase by electron diffraction pattern and electron energy-loss spectroscopy. In addition, it was found from high-resolution transmission electron microscopy study that there are formed no surface oxide layers on the surface of alkanethiol coated Cu powders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.326-331
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• 2023

The utilization of scanning transmission electron microscopy (STEM) in conjunction with cathodoluminescence (CL) has emerged as a valuable tool for the investigation of material optical properties. In recent years, this technique has facilitated significant advancements in the fields of plasmonics and quantum emitters by surpassing prior technical restrictions. The review commences by providing an outline of the diverse STEM-CL operating modes and technical aspects of the instrumentation. The review explains the fundamental physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments for different types of excitations. Additionally, the review compares STEM-CL to other related techniques such as scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1579-1582
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• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• Journal of the Mineralogical Society of Korea
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• v.29 no.2
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• pp.73-78
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• 2016

The oxidation states of structural Fe in clay minerals often reflect the paleo-redox conditions of the depositional environments. It is inevitable to utilize the high resolution of transmission electron microscopy (TEM) to investigate the mechanism of mineral transformation at nano-scale. The applications of TEM- electron energy loss spectroscopy (EELS) for quantification of $Fe(III)/{\Sigma}Fe$ from the K-nontronite formation associated with structural Fe(III) reduction in nontronite under deep subseafloor environment were demonstrated. In particular, quantification of the changes in Fe-oxidation state at nanoscale is essential to understand the mechanisms of minerals formation. The procedure of EELS acquisition, quantitative determination of Fe-oxidation states, and advantages of EELS techniques were discussed.

• Journal of the Mineralogical Society of Korea
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• v.32 no.1
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• pp.63-69
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• 2019

The oxidation states of structural Fe in minerals reflect the paleo-depositional redox conditions for the biologically or abiotically induced mineral formation. Particularly, nano-scale analysis using high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) is necessary to identify evidence for the microbial role in the biomineralization. HRTEM-EELS analysis of oxidation states of structural Fe and carbon bonding structure differentiate biological factors in mineralization by mapping the distribution of Fe(II)/Fe(III) and source of organic C. HRTEM-EELS technique provides geomicrobiologists with the direct nano-scale evidence of microbe-mineral interaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.