• Title/Summary/Keyword: Electron emission

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Synthesis of vertically aligned thin multi-walled carbon nanotubes on silicon substrates using catalytic chemical vapor deposition and their field emission properties (촉매 화학 기상 증착법을 사용하여 실리콘 기판위에 수직 정렬된 직경이 얇은 다중층 탄소나노튜브의 합성과 그들의 전계방출 특성)

  • Jung, S.I.;Choi, S.K.;Lee, S.B.
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.365-373
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    • 2008
  • We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

Hydrothermally Synthesis Nanostructure ZnO Thin Film for Photocatalysis Application (수열합성법으로 합성된 산화아연 나노 구조 박막의 광촉매적 응용)

  • Shinde, N.M.;Nam, Min Sik;Patil, U.M.;Jun, Seong Chan
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.1
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    • pp.97-101
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    • 2016
  • ZnO has nanostructured material because of unique properties suitable for various applications. Amongst all chemical and physics methods of synthesis of ZnO nanostructure, the hydrothermal method is attractive for its simplicity and environment friendly condition. Nanostructure ZnO thin films have been successfully synthesized on fluorine doped tin oxide (FTO) substrate using hydrothermal method. A possible growth mechanism of the various nanostructures ZnO is discussed in schematics. The prepared materials were characterized by standard analytical techniques, i.e., X-ray diffraction (XRD) and Field-emission scanning electron microscopy (SEM). The XRD study showed that the obtained ZnO nanostructure thin films are in crystalline nature with hexagonal wurtzite phase. The SEM image shows substrate surface covered with nanostructure ZnO nanrod. The UV-vis absorption spectrum of the synthesized nanostructure ZnO shows a strong excitonic absorption band at 365 nm which indicate formation nanostructure ZnO thin film. Photoluminescence spectra illustrated two emission peaks, with the first one at 424 nm due to the band edge emission of ZnO and the second broad peak centered around 500 nm possibly due to oxygen vacancies in nanostructure ZnO. The Raman measurements peaks observed at $325cm^{-1}$, $418cm^{-1}$, $518cm^{-1}$ and $584cm^{-1}$ indicated that nanostrusture ZnO thin film is high crystalline quality. We trust that nanostructure ZnO material can be effectively will be used as a highly active and stable phtocatalysis application.

Secondary electron emission characteristics of a thermally grown $SiO_2$ thin layer (건식 열산화로 성장시킨 $SiO_2$박막의 이차전자 방출 특성)

  • 정태원;유세기;이정희;진성환;허정나;이휘건;전동렬;김종민
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.31-36
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    • 2001
  • The secondary election emission (SEE) yields for the thermally grown $SiO_2$ thin layers were measured by varying the thickness of the $SiO_2$ layer and the primary current. $SiO_2$ thin layers were thermally grown in a furnace at $930^{\circ}C$, whose thickness varied to be 5.8 nm, 19 nm, 43 nm, 79 nm, 95 nm, and 114 nm. When the $SiO_2$ layers were thinner than 43 nm, it was found that SEE curves followed the universal curve. However, for samples with a $SiO_2$ layer thicker than 79 nm, the SEE curves exhibited two maxima and the values of SEE yields were reduced. Additionally, as the current of primary electrons increased, the SEE yields were reduced. In this experiment, the maximum value of the SEE yield for $SiO_2$ layers was obtained to be 3.35 when the thickness of $SiO_2$ layer was 19 nm, with the primary electron energy 300 eV and the primary electron current 0.97 $\mu\textrm{A}$. The penetration and escape depth of an electron in the $SiO_2$ layers were calculated at the primary electron energy for the maximum value of the SEE yield and from these depths, it was calculated that the thickness of the $SiO_2$layer.

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Measurement of Electron Temperature and Number Density and Their Effects on Reactive Species Formation in a DC Underwater Capillary Discharge

  • Ahmed, Muhammad Waqar;Rahman, Md. Shahinur;Choi, Sooseok;Shaislamov, Ulugbek;Yang, Jong-Keun;Suresh, Rai;Lee, Heon-Ju
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.118-128
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    • 2017
  • The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

Dye-Sensitized Solar Cell Based on TiO2-Graphene Composite Electrodes (TiO2와 Graphene 혼합물을 전극으로 사용한 염료감응형 태양전지특성 연구)

  • Battumur, T.;Yang, Wooseung;Ambade, S.B.;Lee, Soo-Hyoung
    • Korean Chemical Engineering Research
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    • v.50 no.1
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    • pp.177-181
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    • 2012
  • Dye-sensitized solar cells(DSSCs) based on $TiO_2$ film photo anode incorporated with different amount of grapheme nanosheet(GNS) are fabricated and their photovoltaic performance are investigated. The $TiO_2$-GNS composite electrode has been prepared by a direct mixing method. The DSSC performance of this composite electrode was measured using N3 dye as a sensitizer. The performance of DSSCs using the $TiO_2$-GNS composite electrodes is dependent on the GNS loading in the electrodes. The results show that the DSSCs incorporating 0.01 wt% GNS in $TiO_2$photo anode demonstrates a maximum power conversion efficiency of 5.73%, 26% higher than that without GNS. The performance improvement is ascribed to increased N3 dye adsorption, the reduction of electron recombination and back transport reaction as well as enhancement of electron transport with the introduction of GNS. The presence of both $TiO_2$(anatase) and GNS has been confirmed by FieldEmission Scanning Electron Microscopy(FE-SEM). The decrease in recombination due to GNS in DSSCs has been investigated by the Electrochemical Impedance Spectroscopy.

A Comparison Study on Various Quantum Dots Light Emitting Diodes Using TiO2 Nanoparticles as Inorganic Electron Transport Layer (무기 전자 수송층으로 TiO2 나노입자를 사용한 다양한 양자점 전계발광 소자의 특성 비교 연구)

  • Kim, Moonbon;Yoon, Changgi;Kim, Jiwan
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.3
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    • pp.71-74
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    • 2019
  • In this study, we fabricated two standard and inverted quantum dot light emitting diodes (QLEDs) using $TiO_2$ nanoparticles (NPs) with lower electron mobility than ZnO NPs as inorganic electron transport layer to suppress electron injection into the emitting layer. Current density was much higher for the inverted QLEDs than the standard ones. The inverted QLEDs were brighter, but showed low current efficiency due to the high current density. In addition, as the current density was higher, the driving voltage was higher, and the red shift was confirmed in the emission wavelength spectrum. The low current density in the standard structured devices showed that the possibility that $TiO_2$ NPs could suppress the electron injection in the QLEDs.

Elemental Composition of the Soils using LIBS Laser Induced Breakdown Spectroscopy

  • Muhammad Aslam Khoso;Seher Saleem;Altaf H. Nizamani;Hussain Saleem;Abdul Majid Soomro;Waseem Ahmed Bhutto;Saifullah Jamali;Nek Muhammad Shaikh
    • International Journal of Computer Science & Network Security
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    • v.24 no.6
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    • pp.200-206
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    • 2024
  • Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 1016 cm-3 lies close to the surface.

Improved Performance of All-Solution-Processed Inverted InP Quantum Dot Light-Emitting Diodes Using Electron Blocking Layer (전자차단층 도입을 통한 전체 용액공정 기반의 역구조 InP 양자점 발광다이오드의 성능 향상)

  • Heejae Roh;Kyoungeun Lee;Yeyun Bae;Jaeyeop Lee;Jeongkyun Roh
    • Journal of Sensor Science and Technology
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    • v.33 no.4
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    • pp.224-229
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    • 2024
  • Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

Carbon-Nanotubes Grown from Spin-Coated Nanoparticles for Field-Emission Displays

  • Kim, Do-Yoon;Yoo, Ji-Beom;Han, In-Taek;Kim, Ha-Jin;Kim, Ha-Jong;Jin, Yong-Wan;Kim, Jong-Min
    • Journal of Information Display
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    • v.6 no.2
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    • pp.19-24
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    • 2005
  • The density controlled carbon nanotubes (CNTs) are grown on the iron acetate nanoparticles by using the freeze-dry method. The iron-acetate [Fe(II)$(CH_3COO)_2$] solution is used to prepare the catalytic iron nanoparticles. The density of CNTs is controlled in order to enhance the field emission process. Furthermore, the patterning of the iron nanoparticle catalyst-layer for the fabrication of electronic devices is simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to form the electron emitter with under-gate type triode structure.

Effect of Ambient Gases on Thermal Annealed ZnO films deposited on Si(111) Substrates (Si(111) 기판 위에 증착된 ZnO 박막의 열처리 분위기에 따른 구조적, 광학적 특성 연구)

  • Lee, Ju-Young;Kim, Hong-Seung;Jung, Eun-soo;Jang, Nak-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.8
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    • pp.734-739
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    • 2005
  • Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.