• Applied Microscopy
• /
• v.45 no.4
• /
• pp.214-217
• /
• 2015

This study introduces metal coating as an effective sample preparation method to remove charge-up caused by the shadow effect during field emission scanning electron microscope (FE-SEM) analysis of dynamic structured samples. During a FE-SEM analysis, charge-up occurs when the primary electrons (input electrons) that scan the specimens are not equal to the output electrons (secondary electrons, backscattered electrons, auger electrons, etc.) generated from the specimens. To remove charge-up, a metal layer of Pt, Au or Pd is applied on the surface of the sample. However, in some cases, charge-up still occurs due to the shadow effect. This study developed a coating method that effectively removes charge-up. By creating a converted sample stage capable of simultaneous tilt and rotation, the shadow effect was successfully removed, and image data without charge-up were obtained.

• Journal of Sensor Science and Technology
• /
• v.26 no.2
• /
• pp.79-84
• /
• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.10
• /
• pp.2628-2633
• /
• 2009

In a double deflector employed microcolumn, the variation of FOV and scan field width was investigated in mode of conversely biased double deflector to eliminate barrel distortion caused by aberration. The relationship between biased voltage of each deflector and electron emission tip voltage was studied for the maximum FOV and scan field width. The limitation and the linearity of zooming current image are also estimated as a function of electron emission tip voltage.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.400-403
• /
• 2008

We have investigated the electro-optical characteristics of AC-PDP with different MgO protective layers, which have been deposited by electron beam evaporation from various sintered pellets with different temperatures. We have measured the secondary electron emission coefficient ($\gamma$) by using the Gamma Focused Ion Beam ($\gamma$-FIB) system, the static margin, and the address delay time. Also, we have investigated photoluminescence (PL) characteristics for understanding the energy levels of MgO pellets and protective layers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.53-54
• /
• 2000

Measurements of the direct current resistivity, on multiwalled carbon nanotubes(MWNT) for field electron emitter source that had been screen printed in a thick film form were made as a function of temperature T in the range of 1.7K-390K. In this measuring temperature range, the electrical resistivity for the MWNT show that the main contribution to the conductivity comes form carries that hop directly between localized states executing variable range hopping processes. This thick-film form system for large area display showed a high bright light emission as well as very low turn-on field as like an individual MWNT system at room temperature. Furthermore, the electron emission characteristics followed well typical Fowler-Nordheim conduction under the vacuum.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.762-766
• /
• 2009

We have synthesized and demonstrated a red emission in Organic Light Emitting Diodes (OLEDs) using phosphorescent iridium(III) complexes based on the 2-phenylpyridine ligands with electron-withdrawing carbonyl groups. Among those, a device exhibited highly efficient red-orange emission with the luminance of 20460 cd/$m^2$ at 12 V, the luminous efficiency of 22.0 cd/A at 20 mA/$cm^2$, and the $CIE_{x,y}$ coordinates of (x=0.560, y=0.439 ) at 10 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.897-902
• /
• 1998

We prepared Organic LED with a two layer structure by vacuum evaporation. The diode consisted of hole transfer layer (thickness of 30, 50, 70 nm) and electron transfer layer (thickness of 70, 50, 30 nm) material, which was N, N'-diphenyl- N, N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine)(TPD) and tris(8-hydroxy quinoline) aluminum(Alq3), respectively. We investigated EL properties of the LED with various thickness and cathode electrode. The best results were obtained when thickness of the electron layer is equal to that of emission layer and when AlLi alloy was used as a cathode. The EL intensity, luminance and efficiency of organic LED with equal of layer thick were improved seven, three and two times, respectively. Alq3 was ionized by carrier injection from cathode and could produce exitons. After electron-hole pairs were formed by combination of the electrons and holes at the emission layer, Alq3 layer emitted light.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.110-115
• /
• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.62-62
• /
• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.149-149
• /
• 2010

The effect of titanium (Ti) coating over the surface of carbon nanotubes (CNTs) on field emission characteristics was investigated. Since the work function of CNTs emitter is about 5.0 eV, field emission would be observed at lower voltage if this work function gets lower. Work function of Ti is approximately 4.09eV. Field emission characteristics of as-grown and Ti-coated CNTs were measured in a diode-type configuration. The resultant emission characteristics revealed that thin($50{\AA}$-thick) Ti-coated CNTs could be a better electron emitter with lower emission voltage and higher emission efficiency.