• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.383-383
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• 2011

Generally, field emitters can be categorized into two types according to the emitter shape, one is a planar field emitter and the other is a point emitter. The planar field emitter is used for displays, flat lamps and signage boards. On the other hands, the point field emitter is expected to play a significant role in x-ray sources and electron beam sources. Such applications of the point field emitters, especially, need large emission current and high emission stability with a small electron beam size. A few reports announced point emitters made by carbon nanotubes (CNTs). However, they still have suffered from poor reproducibility and low emission current. Here, we demonstrated high performance CNT point emitters by attaching CNTs onto graphite rod. Graphite rod exhibited good electrical conductivity and chemical stability. In this method, the shape of the point emitter could be easily controlled by changing the length and diameter of the graphite rod. The CNT point emitter showed emission current over 1 mA at an applied electric field of 1.4 V/${\mu}m$. We consider that the stable emission performance is attributed to the stable contact between CNTs and graphite rod.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.208-210
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• 2013

ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and exposed to intense electron beam irradiation to investigate the effects of electron irradiation on the properties of the films. Although all of the films had ZnO (002) textured structure regardless of electron irradiation, the grain sizes of the films decreased with electron irradiation. Surface roughness also depended on electron irradiation. The surface roughness varied between 2.3 and 1.6 nm, depending on the irradiation energy. Based on photoluminescence (PL) characterization, the most intense UV emission was observed from ZnO films irradiated at 900 eV. Since the intensity of UV emission is dependent upon the stoichiometric of ZnO films, we conclude that 900 eV was the optimum electron irradiation energy to achieve the best stoichiometric of ZnO films in this study.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1288-1293
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• 2007

The present study covers the design and analysis of a thermionic scanning electron microscope (SEM) column. The SEM column contains an electron optical system in which electrons are emitted and moved to form a focused beam, and this generates secondary electrons from the specimen surfaces, eventually making an image. The electron optical system mainly consists of a thermionic electron gun as the beam source, the lens system, the electron control unit, and the vacuum unit. In the design process, the dimension and capacity of the SEM components need to be optimally determined with the aid of finite element analyses. Considering the geometry of the filament, a three-dimensional (3D) finite element analysis is utilized. Through the analysis, the beam emission characteristics and relevant trajectories are predicted from which a systematic design of the electron optical system is enabled. The validity of the proposed 3D analysis is also discussed by comparing the directional beam spot radius. As a result, a prototype of a thermionic SEM is successfully developed with a relatively short time and low investment costs, which proves the adoptability of the proposed 3D analysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Korean Journal of Environmental Agriculture
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• v.26 no.2
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• pp.131-140
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• 2007

Phospho-gypsum a primary waste by-product in phosphate fertilizer manufacturing industry and a potential source of electron acceptors, such as mainly of sulfate and a trace amount of iron and manganese oxides, was selected as soil amendment for reducing methane $(CH_4)$ emissions during rice cultivation. The selected amendment was added into potted soils at the rate of 0, 2, 10, and 20 Mg $ha^{-1}$ before rice transplanting. $CH_4$ flux from the potted soil with rice plant was measured along with soil Eh and floodwater pH during the rice cultivation period. $CH_4$ emission rates measured by closed chamber method decreased with increasing levels of phospho-gypsum application, but rice yield markedly increased up to 10 Mg $ha^{-1}$ of the amendment. At this amendment level, total $CH_4$ emissions were reduced by 24% along with 15% rice grain yield increment over the control. The decrease in total $CH_4$ emission may be attributed due to shifting of electron flow from methanogenesis to sulfate reduction under anaerobic soil conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.330-335
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• 2003

This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1607-1613
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• 2008

We investigated the miniaturized free electron laser(FEL) module based on microcolumn. The miniaturized FEL is composed of two parts: electron generation part and radiation emission part. The radiation emission part, called wiggler, consists of a grid plate. While the electrons are passing through the wiggler, electron trajectory shows sinusoidal curve caused by the periodically applied voltage on the grid, and then it give rise to radiation emission. We analyzed the wiggler parameters, grid width, depth, period, applied voltage and the pair wiggler space using 2-D simulation tool.