• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1998.04a
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• pp.302-307
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• 1998

In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of exactness and accuracy, because this is used as basic data for the design of building structure and structural dynamics of equipment. The study on the evaluation of the factors affecting the permissible vibration criteria is required to design the efficient isolation system of the semiconductor manufacturing of equipment. This paper deals with the properties of the effected factor for vibration criteria of high sensitive equipment.

• Journal of KSNVE
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• v.9 no.6
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• pp.1227-1233
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• 1999

Modern technology depends on the reliability of extremely high technology equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a nanometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. This paper deals with the structural dynamic design in high class semiconductor factory in order to be satisfied more strict vibration criteria for high sensitive equipment.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.1376-1383
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• 2001

Modem technology depends on the reliability of extremely high technology equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of 'exactness' and 'accuracy', because this is used as basic data for the design of building structure and structural dynamics of equipment. This paper deals with the properties of time and frequency domain in order to obtain more improved vibration criteria for high sensitive equipment.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.563-575
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• 2020

The purpose of this study is to evaluate the activation characteristics that occur in a linear accelerator for container security inspection. In the computer simulation design, first, the targets consisted of a tungsten (Z=74) single material target and a tungsten (Z=74) and copper (Z=29) composite target. Second, the fan beam collimator was composed of a single material of lead (Z=82) and a composite material of tungsten (Z-74) and lead (Z=82) depending on the material. Final, the concrete in the room where the linear accelerator was located contained magnetite type and impurities. In the research method, first, the optical neutron flux was calculated using the MCNP6 code as a F4 Tally for the linear accelerator and structure. Second, the photoneutron flux calculated from the MCNP6 code was applied to FISPACT-II to evaluate the activation product. Final, the decommissioning evaluation was conducted through the specific activity of the activation product. As a result, first, it was the most common in photoneutron targets, followed by a collimator and a concrete 10 cm deep. Second, activation products were produced as by-products of W-181 in tungsten targets and collimator, and Co-60, Ni-63, Cs-134, Eu-152, Eu-154 nuclides in impurity-containing concrete. Final, it was found that the tungsten target satisfies the permissible concentration for self-disposal after 90 days upon decommissioning. These results could be confirmed that the photoneutron yield and degree of activation at 9 MeV energy were insignificant. However, it is thought that W-181 generated from the tungsten target and collimator of the linear accelerator may affect the exposure when disassembled for repair. Therefore, this study presents basic data on the management of activated parts of a linear accelerator for container security inspection. In addition, When decommissioning the linear accelerator for container security inspection, it is expected that it can be used to prove the standard that permissible concentration of self-disposal.