• Current Photovoltaic Research
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• 제8권3호
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• pp.102-106
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• 2020

In this paper, the effect of MoSe₂ on the contact resistance (R_C) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se₂ (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe₂, so the formation of the MoSe₂ layer is essential. However, the CIGS solar module has a TCO/MoSe₂/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (R_C) of the P2 region was calculated using the transmission line method, and MoSe₂ was confirmed to increase R_C of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe₂ junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased R_C. In order to reduce the R_C caused by CBO, MoSe₂ must be made thin in a CIGS solar module.

• 한국진공학회지
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• 제20권1호
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• pp.57-62
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• 2011

열처리 방식을 통하여 형성된 FePt 나노 입자를 사용하는 자기 양자점 소자를 제작하고, 전기적 및 자기적 특성을 연구하였다. FePt 자기 양자점 터널링 소자는 p 형 Si 기판 상부에 약 20 nm의 $SiO_2$ 터널 절연막을 형성하고 FePt 박막을 3 nm 두께로 증착한 후에 열처리 방식을 이용하여 8~15 nm 크기의 양자점을 갖는 구조이다. 터널링 소자의 전류-전압 특성을 자기장과 온도 변화에 따라 관찰하였고 특히, 저온에서 비선형적인 전류-전압 곡선을 확인하였으며 이러한 단전자 수송현상을 전자의 hopping 모델과 양자점의 터널링 현상을 이용하여 설명하였다. FePt 양자점 터널링 소자는 20 K에서 터널링 현상을 보였으며, 양단에 가해준 전압과 관계없이 외부 자기장이 증가할수록 음의 자기저항이 커지는 현상을 관찰하였고, 9,000 G에서 약 26.2 %의 자기저항 비를 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• Korean Membrane Journal
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• 제8권1호
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• pp.1-12
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• 2006

In semiconductor industries, dissolved oxygen is one of the most undesirable contaminants of ultrapure water. A method for dissolved oxygen removal (DOR) consists in the use of polymeric hollow fibres, loaded with a catalyst and fed with a reducing agent such as hydrogen. In this work, PVDF hollow fibres loaded with Pd were characterized by means of perporometry, scanning electron microscopy (SEM), energy dispersive X-ray (EDX). The hollow fibre analyzed shows a five-layer structure with remarkable morphological differences. An estimation of pore diameters and their distribution was performed giving a mean pore diameter of 100 nm. The permeance and selectivity of the fibres were measured using $H_2,\;N_2,\;O_2$ as single gases, at different operating conditions. An $H_2$ permeance of $37 mmol/m^2s$ was measured and $H_2/O_2$ and $H_2/N_2$ selectivities of ca. 3 were obtained. $H_2$ permeance was 1/3 when a water stream flows in the shell side. Catalytic fibrebehaviour was simulated using a mathematical model for a loop membrane reactor, considering only $O_2$ and $H_2$ diffusive transport inside the membrane and their catalytic reaction. Dimensionless parameters such as the Thiele modulus are employed to describe the system behaviour. The model agrees well with the experimental reaction data.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.68-69
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• 2011

The process of charge transfer at the interface between two semiconductors or between a metal and a semiconductor plays an important role in many areas of technology. The optimization of such devices requires a good theoretical description of the interfaces involved. This, in turn, has motivated detailed mechanistic studies of interfacial charge-transfer reactions at metal/organic, organic/organic, and organic/inorganic semiconductor heterojunctions. Charge recombination of photo-induced electron with redox species such as oxidized dyes or triiodide or cationic HTM (hole transporting materials) at the heterogeneous interface of $TiO_2$ is one of main loss factors in liquid junction DSSCs or solid-state DSSCs, respectively. Among the attempts to prevent recombination reactions such as insulating thin layer and lithium ions-doped hole transport materials and introduction of co-adsorbents, although co-adsorbents retard the recombination reactions as hydrophobic energy barriers, little attention has been focused on the anchoring processes. Molecular engineering of heterogeneous interfaces by employing several co-adsorbents with different properties altered the surface properties of $TiO_2$ electrodes, resulting to the improved power conversion efficiency and long-term stability of the DSSCs. In this talk, advantages of the coadsorbent-assisted sensitization of N719 in preparation of DSSCs will be discussed.

• Membrane and Water Treatment
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• 제9권4호
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• pp.221-231
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• 2018

A new procedure to produce poly(vinylidene fluoride)/boron nitride hybrid membrane is presented for application in membrane distillation (MD) process. The influence of hexagonal boron nitride (h-BN) incorporation on the performance of the polymeric membranes is studied through the present investigation. For this aim, h-BN nanopowders were successfully synthesized using the simple chemical vapor deposition (CVD) route and subsequent solvent treatments. The resulting h-BN nanosheets were blended with poly(vinylidene fluoride) (PVDF) solution. Then, the prepared composite solution was subjected to phase inversion process to obtain PVDF/h-BN hybrid membranes. Various examinations such as scanning electron microscopy (SEM), wettability, permeation flux, mechanical strength and liquid entry pressure (LEP) measurements are performed to evaluate the prepared membrane. Moreover, Air gap membrane distillation (AGMD) experiments were carried out to investigate the salt rejection performance and the durability of membranes. The results show that our hybrid PVDF/h-BN membrane presents higher water permeation flux (${\sim}18kg/m^2h$) compared to pristine PVDF membrane. In addition, the experimental data confirms that the prepared nanocomposite membrane is hydrophobic (water contact angle: ${\sim}103^{\circ}$), has a porous skin layer (>85%), as well competitive fouling resistance and operational durability. Furthermore, the total salt rejection efficiency was obtained for PVDF/h-BN membrane. The results prove that the novel PVDF/h-BN membrane can be easily synthesized and applied in MD process for salt rejection purposes.

• 폴리머
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• 제26권2호
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• pp.260-269
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• 2002

본 연구에서는 범용 열가소성수지인 폴리프로필렌에 다양한 입자 강화제로 무기질 폐기 제올라이트, 탈크, 탄산칼슘 등을 첨가하여 소재를 복합재료화 하였다. 또한 입자 사이즈에 따른 열안정성과 입자 강화제에 따른 난연 특성을 확인하였다. 본 연구에서는 입도 분석 결과 폐기 제올라이트가 85.34 $mu extrm{m}$, 탄산칼슘이 33.93 $mu extrm{m}$, 탈크가 18.51 $mu extrm{m}$의 평균 입자 크기를 가지고 있는 것을 확인하였다. 난연성 측정으로 산소지수(LOI, ASTM D2863)와 콘 칼로리미터 (ASTM E1354 ISO 5660)를 사용하였으며, 열 안정성 측정으로는 TGA를 사용하였다. 입자 강화제와 난연제 DBDPO를 사용한 결과 최대 열 방출 속도(M-HRR)는 탈크>탄산칼슘>폐기 제올라이트 순으로 감소됨을 확인하였다. 콘 칼로리미터 실험 결과, 난연제 DBDPO만 혼합하였을 경우보다 입자 강화제를 첨가 혼합하였을 경우가 난연 효율이 대략 2배 정도 향상됨을 확인하였다. 또한 산소지수 결과도 콘 칼로리미터와 유사한 경향을 보임을 확인하였다. 광학현미경(OM)과 주사전자현미경(SEM)을 사용하여 입자 강화된 복합재료의 연소되는 과정의 단면을 연소 단계별로 관찰함으로써 연소 표면에서의 입자 강화제의 배열 양상 및 산소 공급의 특성 등을 연구하였다.

• 대한조선학회논문집
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• 제58권4호
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• pp.262-270
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• 2021

Consumption of Liquefied Natural Gas (LNG) has increased due to environmental pollution; therefore, the need for LNG carriers can efficiently transport large quantities of LNG, is increased. In various types of LNG Cargo Containment System (CCS), Membrane-type MARK-III composed of composite materials is generally employed in the construction of an LNG carrier. Among composite materials in a Mark-III system, glass-fiber composites act as a secondary barrier to prevent the inner hull structure from leakage of LNG when the primary barrier is damaged. Nevertheless, several cases of damage to the secondary barriers have been reported and if damage occurs, LNG can flow into the inner hull structure, causing a brittle fracture. To prevent those problems, this study conducted the applicability assessment of composite material manufactured by bonding glass-fiber and aluminum with epoxy resin and increasing layer from three-ply (triplex) to five-ply (pentaplex). Tensile tests were performed in five temperature points (25, -20, -70, -120, and -170℃) considering temperature gradient in CCS. Scanning Electron Microscopy (SEM) and Coefficient of Thermal Expansion (CTE) analyses were carried out to evaluate the microstructure and thermos-mechanical properties of the pentaplex. The results showed epoxy resin and increasing layer number contributed to improving the mechanical properties over the whole temperature range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.