• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.534-537
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• 2002

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

• Journal of Plant Biology
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• v.35 no.2
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• pp.143-153
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• 1992

Nectar secretion from extrafloral nectary cells of Prunus yedoensis was examined by light and electron microscopy. Nectaries were composed of two or three layers of secretory cells and one layer of subsectretory cells. Vascular bundles in the petioles were connected to those of the subsectretory cell layer. Secretory cells had a number of mitochondria with poorly developed cristae. Plastids had little thylakoids and small vesicles, about 0.2 to 0.3 mm in diameter; however, no plastids had starch grains. Calcium oxalate crystals and plasmodesmata were frequently observed in the subsectretory and secretory cells, respectively. And nectar substances were observed in phloem of petiole, subsectretory, and secretory cells of the secretory gland. These results suggested that the nectar moved by symplastic transport through the plasmodesmata. On the other hand, the nectar droplets were observed in the secretory cell walls. in the cuticular layer just beyond of the former, and on the outer surface of the cuticular layer: such observations indicated that a apoplastic movement was involved in the final step of the nectar secretion. Cellular components related to the nectar transport, such as plasma membrane, cell wall and cuticle were not destroyed but intact: it was interpreted as a eccrine secretion.retion.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.429-429
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• 2016

Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3087-3090
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• 2012

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.310.2-310.2
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• 2013

For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.605-608
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• 2004

A novel blue-green emitting aluminum complex was developed by employing 8-hydroxyquinoline as co-ligand for enhancement of electron transport and light emission abilities so that the electroluminescent (EL) devices do not need additional electron transport layer. The aluminum complex (PAlQ) of 8-hydroxyquinoline and ${\alpha}$-pyridoin was synthesized The structure of the PAlQ was elucidated by FT-IR, UV-Vis and XPS. The PAlQ complex showed thermal stability up to 350$^{\circ}C$ under nitrogen flow by TGA. The photoluminescence (PL) was measured from solid film of the PAlQ complex on quartz substrate. The EL device was fabricated by the vacuum deposition. The device having the structure of ITO/TPD/PAlQ/Al was studied, where N,N-bis(3-methylphenyl}-N,N'-diphenyl-benzidine (TPD) was used as a hole transporting layer. The EL device emitted a blue-green light.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.490-497
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• 2016

In this study, 3-dimensional ripple structured anion (chlorine) doped ZnO thin film are developed, and used as electron transporting layer (ETL) in inverted organic photovoltaics (I-OPVs). Optical and electrical characteristics of ZnO:Cl ETL are investigated depending on the chlorine doping ratio and optimized for high efficient I-OPV. It is found that optimized chlorine doping on ZnO ETL enhances the ability of charge transport by modifying the band edge position and carrier mobility without decreasing the optical transmittance in the visible region, results in improvement of power conversion efficiency of I-OPV. The highest performance of 8.79 % is achieved for I-OPV with ZnO:Cl-x (x=0.5wt%), enhanced ~10% compared to that of ZnO:Cl-x (x=0wt%).