• 전기의세계
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• v.34 no.8
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• pp.470-475
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• 1985

우주물질의 대부분이 플라즈마 상태에 있지마는 지구상에서는 천둥이 칠 때 생기는 방전이나 극지방에서 볼 수 있는 오로라와 같이 극히 일부분이 자연상태의 프라즈마로 존재한다. 지금까지 플라즈마의 이용은 그것이 내는 밝은 빛을 이용한 조명이나, 높은 열을 이용한 용접이나 절단이 고작이었으나, 최근에 들어 초고온, 고밀도 플라즈마를 이용한 핵융합 에너지 연구나 Free Electron Laser나 Gyrotron과 같이 새로운 Radiation Source로써 종래의 Source가 만들지 못하던 주파수 영역이나 Glow Discharge에서 생기는 저온 Plasma를 이용한 Plasma Etching PECVD(Plasma Enhanced CHemical Vapor Deposition), Plasma Ashing, Sputtering등은 VLSI의 제조에 필요불가결한 공정의 일부분이 되고 있다. 앞으로 수회에 걸쳐 본 기술해설란을 통하여 이들 Plasma의 이용 기술을 소개하고자 하며 본회에서는 그중에서 Plasma Etching에 대해서 그 원리와 기술상의 특징을 살펴보고자 한다.

• Applied Microscopy
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• v.45 no.4
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• pp.242-248
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• 2015

In this paper, three carbon sources, i.e., solid graphite, gaseous CH4 and liquid ethanol, and one solid silicon source were employed to synthesize SiC/C nanocomposite powders by arc-discharge plasma. The processing conditions such as the component ratios of raw materials, atmospheric gases, etc. were adjusted for controllable synthesis of the nanopowders. It is indicated that both of solid graphite and silicon can be co-evaporated and reacted to form nanophases of cubic ${\beta}$-SiC with ~50 nm in mean size and a little free graphite; the carbon atoms decomposed from gaseous $CH_4$ favor to combine with the evaporated silicon atoms to form the dominant SiC nanophase; liquid carbon source of ethanol can also be used to harvest the main ${\beta}$-SiC and minor 6H-SiC phases in the assembly of nanoparticles. The as-prepared SiC/C nanocomposite powders were further purified by a heat-treatment in air and their photocatalytic performances were then greatly improved.

• The Journal of Korean Society for Radiation Therapy
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• v.1 no.1
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• pp.63-69
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• 1985

High energy electron beams took effect for tumor radio-therapy, however, had a lot of problems in clinical application because of various conversion factors and complication of physical reactions. Therefore, we had experimentally studied the important properties of high energy electron beams from the linear accelerator, LMR-13, installed in Yonsei Cancer Center. The results of experimental studies on the problems in the 8, 10, 12 Mev electron beam therapy were reported as following. 1. On the measurements of the outputs and absorbed does, the ionization type dosimeters that had calibrated by $^{90}Sr$ standard source were suitable as under $3\%$ errors for high energy electrons to measure, but measuring doses in small field sizes and the regions of rapid fall off dose with ionization chambers were difficult. 2. The electron energy were measured precisely with energy spectrometer consisted of magnet analyzer and tele-control detector and the practical electron energy was calculated under $5\%$ errors by maximum range of high energy electron beam in the water. 3. The correcting factors of perturbated dose distributions owing to radiation field, energy and material of the treatment cone were checked and described systematically and variation of dose distributions due to inhomogeneous tissues and sloping skin surfaces were completely compensated. 4. The electron beams, using the scatters; i.e., gold, tin, copper, lead, aluminium foils, were adequately diffused and minimizing the bremsstrahlung X-ray induced by the electron energy, irradiation field size and material of scatterers, respectively. 5. Inproving of the dose distribution from the methods of pendulum, slit, grid and focusing irradiations, the therapeutic capacity with limited electron energy could be extended.

• Journal of Radiation Protection and Research
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• v.3 no.1
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• pp.6-22
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• 1978

High energy electron beams took effect for tumor radio-therapy, however, had a lot of problems in clinical application because of various conversion factors and complication of physical reactions. Therefor, we had experimentally studied the important properties of high energy electron beams from the linear accelerator, LMR-13, installed in Yonsei Cancer Center. The results of experimental studies on the problems in the 8, 10, 12 Mev electron beam therapy were reported as following. 1. On the measurements of the outputs and absorbed doses, the ionization type dosimeters that had calibrated by $^{90}Sr$ standard source were suitable as under 3% errors for high energy electrons to measure, but measuring doses in small field sizes and the regions of rapid fall off dose with ionization chambers were difficult. 2. The electron energy were measured precisely with energy spectrometer consisted of magnet analyzer and tele-control detector and the practical electron energy was calculated under 5% errors by maximum range of high energy electron beam in the water. 3. The correcting factors of perturbated dose distributions owing to radiation field, energy and material of the treatment cone were checked and described systematically and variation of dose distributions due to inhomogeneous tissues and sloping skin surfaces were completely compensated. 4. The electron beams, using the scatterers; ie., gold, tin, copper, lead, aluminium foils, were adequately diffused and minimizing the bremsstrahlung X-ray induced by the electron energy, irradiation field size and material of scatterers, respectively. 5. Inproving of the dose distribution from the methods of pendulum, slit, grid and focusing irradiations, the therapeutic capacity with limited electron energy could be extended.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2385-2390
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• 2009

N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, $N_2O$ gas was employed as a dopant source and various deposition conditions such as $N_2O$ gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.191-191
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• 1999

Extended X-ray Absorption Fine Structure (EXAFS)는 일반적으로 널리 사용하는 X선 회절분광기로 분석하기 힘든 chemical 또는 biological system의 structural analyses에 매우 유용한 분석방법이다. 특히 세라믹이나 유전체 비정질 재료의 미세 원자 구조에 관한 정보를 얻는데는 가장 강력한 분석방법중의 하나로 알려져 있다. 현재까지 대부분의 EXAFS 실험은 방사광 가속기를 이용하여 수행하였다. 그런데 신제품 개발의 순환주기가 급속하게 단축되는 현실적인 문제에 부응하기 위하여 실험실에서 EXAFS 실험을 수행할 수 있는 system을 개발하게 되었다. 개발한 XIEES 장비는 rotating anode 형의 18kW X-ray source, Optical system, Detection system, Stepping motor control system, vacuum system, Utility 등으로 구성하였다. Optical system에서의 6개의 Johanson type monochromator를 사용하여 분석가능한 x-ray energy range를 480eV에서 41keV까지 구현하였다. 이는 산소에서 우라늄까지 분석이 가능함을 의미하는 것으로, 산화물 연구에 많이 활용할 것으로 기대한다. XIEES는 투과 및 형광 X-ray를 검출할 수 있는 기능과 X-ray에 의해 여기 되는 모든(광전자, Aiger 전자, 이차전자)들을 검출할 수 있는 기능을 갖추고 있는데 이를 Total Electron Yield 측정이라고 한다. Total Electron Yield 측정은 박막 시료와 같이 투과가 되지 않는 시료를 분석할 뿐만 아니라, 경원소 분석, 낮은 에너지에서 흡수 edge가 나타나는 L-edge 측정을 통한 전자 구조 분석 등에 유용한다. 실험실용 XIEES 장비는 방사광가속기에 비해 x-ray flux가 크게 뒤지는 문제와 Total Electron Yield를 측정하는 데 있어서 source에서 나오는 x-ray beam이 진공용기 안에서 산란되어 이차전자를 여기하고 이 이차전자들이 전자검출기에 유입되어 측정에 영향을 미치는 background 문제 등이 있다. 이 두 가지 문제를 해결하기 위하여 Capillary tube를 사용하였다. 본 연구에서는 실험실용 XIEES 장비를 소개하고 이를 이용하여 Cu standard 시료에서 측정한 EXAFS 결과와 Capillary tube를 사용하여 얻은 x-ray flux 증진 및 background 제거 효과에 대해서 발표한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.39-39
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• 1993

A finite element analysis and Monte Carlo method have been applied to calculate the ppressure pprofiles around the ppohang Light Source (ppLS) electron storage ring with the aim of ppredicting the pperformance of the vacuum system designed for the ppLS vacuum system. After ppropperly choosing the design pparameters, the ppressure distribution are calculated as a function of the integrated stored beam current [AmppHrs]. The effect of changes of the vacuum pparameters, such as installed ppumpping sppeeds and synchrotron radiation induced gas desorpption rates on the ppressure pprofile, is also studied. The results indicate that the use of lumpped non-evapporable getter ppumpps together with spputter ion ppumpps for ppumpping the ppLS down to the required ppressure is ppossible in the ppresence of synchrotron induced gas loads, after resonable beam cleaning time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.13-14
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• 2008

A high rate magnetron sputtering source (HRMSS) was employed to deposit thick copper films. The HRMSS was manufactured by changing the magnet size, arrangement, and field intensity. For the preparation of thick copper films, the copper sputtering conditions using HRMSS were characterized based on the deposition parameters such as discharge characteristics, I-V characteristics of the source, and change of deposition rate. The deposition rate of copper turned out to be more than 5 times than that of conventional magnetron sputtering source. Thick copper films having thickness of more than $20{\mu}m$ were prepared by using HRMSS. The morphology and orientation of the films were investigated by scanning electron microscopy and x-ray diffraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.